Fairchild FDNS86520L service manual
FDMS86520L
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
and
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
N-Channel PowerTrench® MOSFET
60 V, 22 A, 8.2 mΩ
Features
Max r
Max r
Advanced package and silicon combination for low r
high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 8.2 mΩ at VGS = 10 V, ID = 13.5 A
DS(on)
= 11.7 mΩ at VGS = 4.5 V, ID = 11.5 A
DS(on)
DS(on)
, fast switching speed and body
DS(on)
FDMS86520L N-Channel PowerTrench
April 2011
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 22
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 60
Single Pulse Avalanche Energy (Note 3) 91 mJ
Power Dissipation TC = 25 °C 69
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 71
C
= 25 °C (Note 1a) 13.5
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86520L FDMS86520L Power 56 13 ’’ 12
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
Thermal Resistance, Junction to Case 1.8
Thermal Resistance, Junction to Ambient (Note 1a) 50
1
mm 3000 units
°C/W
www.fairchildsemi.com
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current V
= 250 μA, VGS = 0 V60 V
D
I
= 250 μA, referenced to 25 °C 29 mV/°C
D
= 48 V, V
DS
= ±20 V, V
GS
= 0 V1μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance V
I
= 250 μA, referenced to 25 °C -7 mV/°C
D
= 10 V, ID = 13.5 A 6.78.2
V
GS
V
= 4.5 V, ID = 11.5 A 9.1 11.7
GS
= 10 V, ID = 13.5 A,
V
GS
T
= 125 °C
J
= 5 V, ID = 13.5 A51S
DS
= 250 μA11.83V
D
9.6 11.8
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 625 835 pF
Reverse Transfer Capacitance 25 45 pF
= 30 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.6 Ω
3470 4615 pF
FDMS86520L N-Channel PowerTrench
mΩ
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 5.6 11 ns
Turn-Off Delay Time 32 52 ns
Fall Time 3.4 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 9.5 nC
Gate to Drain “Miller” Charge 4.7 nC
= 30 V, ID = 13.5 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 4.5 V2130nC
GS
GEN
Drain-Source Diode Characteristics
V
= 0 V, IS = 2.1 A (Note 2) 0.72 1.2
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
1. R
θJA
the user's board design.
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 21 34 nC
Reverse Recovery Time
Reverse Recovery Charge 37 59 nC
a. 50 °C/W when mounted on a
2
pad of 2 oz copper.
1 in
GS
= 0 V, IS = 13.5 A (Note 2) 0.83 1.3
V
GS
= 13.5 A, di/dt = 100 A/μs
I
F
= 13.5 A, di/dt = 300 A/μs
I
F
= 6 Ω
V
DD
I
= 13.5 A
D
= 30 V,
θJC
15 27 ns
45 63 nC
37 60 ns
30 48 ns
is guaranteed by design while R
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
θCA
V
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 1 mH, IAS = 13.5 A, VDD = 54 V, VGS = 10 V.
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
2
www.fairchildsemi.com
FDMS86520L N-Channel PowerTrench
0.0 0.5 1.0 1.5 2.0 2.5
0
10
20
30
40
50
60
VGS = 3 V
VGS = 4 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
VGS = 10 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 102030405060
0
1
2
3
4
5
VGS = 4.5 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESI STANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 4 V
VGS = 3 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 13.5 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANC E
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
10
20
30
40
TJ = 125 oC
ID = 13.5 A
TJ = 25 oC
V
GS
, GATE TO S OURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
12345
0
10
20
30
40
50
60
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Norma liz ed On- Re sis ta nce
vs Drain Current and Gate Voltage
®
MOSFET
Fi gu re 3. No rm al iz ed On Resistance
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMS86520L Rev.C
Figure 5. Transfer Characteristics
Figure 4.
On-Resista nce vs Ga te to
Source Voltage
Figure 6.
Sou rce to Dr ain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
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