Fairchild FDN86246 service manual

FDN86246

N-Channel PowerTrench® MOSFET

150 V, 1.6 A, 261 m:
Features

 Max r

 Max r

 High performance trench technology for extremely low r

 High power and current handling capability in a widely used

surface mount package

 Fast switching speed

 100% UIL tested

 RoHS Compliant

= 261 m: at VGS = 10 V, ID = 1.6 A

DS(on)

= 359 m: at VGS = 6 V, ID = 1.4 A

DS(on)

DS(on)



General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for r
ruggedness.

Application

 PD Switch

December 2010

®

, switching performance and

DS(on)

process that has

FDN86246 N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

TJC

R

TJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

©2010 Fairchild Semiconductor Corporation
FDN86246 Rev.C

Drain to Source Voltage 150 V

Gate to Source Voltage ±20 V

-Continuous (Note 1a) 1.6

-Pulsed 6

Single Pulse Avalanche Energy (Note 3) 13 mJ

Power Dissipation (Note 1a) 1.5

Power Dissipation (Note 1b) 0.6

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case (Note 1) 75

Thermal Resistance, Junction to Ambient (Note 1a) 80

246 FDN86246 SSOT-3 7 ’’ 8 mm 3000 units

= 25 °C unless otherwise noted

A

1

A

W

°C/W

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FDN86246 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

'BV

DSS

'T

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

'V

GS(th)

'T

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 150 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 120 V, V

Gate to Source Leakage Current VGS = ±20 V, V

= 250 PA, referenced to 25 °C 106 mV/°C

I

D

= 0 V 1 PA

GS

= 0 V ±100 nA

DS

(Note 2)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA23.44V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDS = 10 V, ID = 1.6 A 4 S

I

= 250 PA, referenced to 25 °C -9 mV/°C

D

V

= 10 V, ID = 1.6 A 195 261

GS

= 6 V, ID = 1.4 A 242 359

GS

= 10 V, ID = 1.6 A, TJ = 125 °C 359 481

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 21 30 pF

Reverse Transfer Capacitance 1.6 5 pF

= 75 V, VGS = 0 V,

V

DS

f = 1 MHz

168 225 pF

Gate Resistance 0.9 :

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

g

g

gs

gd

Turn-On Delay Time

Rise Time 1.1 10 ns

Turn-Off Delay Time 8 16 ns

= 75 V, ID = 1.6 A,

V

DD

= 10 V, R

V

GS

GEN

= 6 :

4.5 10 ns

Fall Time 2.9 10 ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 5 V 1.6 3 nC

Gate to Source Gate Charge 0.9 nC

V

DD

= 1.6 A

I

D

= 75 V,

2.9 5 nC

Gate to Drain “Miller” Charge 0.8 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.

1. R

TJA

R

is guaranteed by design while R

TJC

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.

3. Starting TJ = 25 °C; N-ch: L = 3 mH, IAS = 3 A, VDD = 150 V, VGS = 10 V.

©2010 Fairchild Semiconductor Corporation
FDN86246 Rev.C

Source to Drain Diode Forward Voltage V

Reverse Recovery Time

Reverse Recovery Charge 29 47 nC

is determined by the user's board design.

TCA

a)

80 °C/W when mounted on a
1 in2 pad of 2 oz copper

= 0 V, IS = 1.6 A (Note 2) 0.83 1.3 V

GS

= 1.6 A, di/dt = 100 A/Ps

I

F

2

44 70 ns

180 °C/W when mounted on a

b)

minimum pad.

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