Fairchild FDN5632N-F085 service manual
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FDN5632N_F085
N-Channel Logic Level PowerTrench® MOSFET
60V, 1.6A, 98mΩ
FDN5632N_F085 N-Channel Logic Level PowerTrench
September 2008
Features
R
R
Typ Q
Low Miller Charge
Qualified to AEC Q101
RoHS Compliant
DS(on)
DS(on)
= 98mΩ at V
= 82mΩ at V
= 9.2nC at VGS = 10V
g(TOT)
GS
GS
= 4.5V, I
= 10V, I
= 1.6A
D
= 1.7A
D
Applications
DC/DC converter
Motor Drives
®
MOSFET
©2008 Fairchild Semiconductor Corporation
FDN5632N_F085 Rev. A (W)
www.fairchildsemi.com1
MOSFET Maximum Ratings T
= 25°C unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GS
I
D
P
D
T
J
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current Continuous (V
= 10V) 1.7
GS
Pulsed 10
Power Dissipation 1.1 W
, T
Operating and Storage Temperature -55 to +150
STG
Thermal Characteristics
FDN5632N_F085 N-Channel Logic Level PowerTrench
A
o
C
R
θJC
R
θJA
Thermal Resistance Junction to Case 75
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 111
o
o
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
5632 FDN5632N_F085 SSOT3 7” 8mm 3000 units
Electrical Characteristics T
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
B
VDSS
I
DSS
I
GSS
On Characteristics
V
GS(th)
r
DS(on)
Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V - - ±100 nA
Gate to Source Threshold Voltage VGS = VDS, ID = 250µA12.03V
Drain to Source On Resistance
= 25°C unless otherwise noted
A
V
= 48V, - - 1
DS
= 0V TA = 125oC - - 250
V
GS
= 1.7A, VGS= 10V - 57 82
I
D
I
= 1.6A, VGS= 6V - 62 88
D
= 1.6A, VGS= 4.5V 70 98
I
D
= 1.7A, VGS= 10V,
I
D
T
= 150oC
A
-107135
C/W
C/W
µA
mΩ
®
MOSFET
Dynamic Characteristics
C
iss
C
oss
C
rss
R
G
Q
g(TOT)
Q
gs
Q
gd
Input Capacitance
Output Capacitance - 60 - pF
Reverse Transfer Capacitance - 30 - pF
= 15V, VGS = 0V,
V
DS
f = 1MHz
Gate Resistance f = 1MHz - 1.4 - Ω
Total Gate Charge at 10V VGS = 0 to 10V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge - 1.4 - nC
FDN5632N_F085 Rev. A (W) www.fairchildsemi.com2
V
DD
I
D
= 20V
= 1.7A
- 475 - pF
- 9.2 12 nC
-1.5-nC
FDN5632N_F085 N-Channel Logic Level PowerTrench
Electrical Characteristics T
= 25oC unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Switching Characteristics
t
on
t
d(on)
t
r
t
d(off)
t
f
t
off
Turn-On Time
Turn-On Delay Time - 15 - ns
Rise Time - 1.7 - ns
Turn-Off Delay Time - 5.2 - ns
Fall Time - 1.3 - ns
Turn-Off Time - - 12.9 ns
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Voltage
Reverse Recovery Time
Reverse Recovery Charge - 7.9 10.3 nC
= 30V, ID = 1.0A
V
DD
V
= 10V, R
GS
I
= 1.7A - 0.8 1.25
SD
= 0.85A - 0.8 1.0
I
SD
= 1.7A, dISD/dt = 100A/µs
I
SD
GEN
= 6Ω
- - 30 ns
- 16.0 21 ns
V
®
MOSFET
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
FDN5632N_F085 Rev. A (W) www.fairchildsemi.com3
a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
certification.
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