Fairchild FDN5632N-F085 service manual

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FDN5632N_F085

N-Channel Logic Level PowerTrench® MOSFET
60V, 1.6A, 98mΩ

FDN5632N_F085 N-Channel Logic Level PowerTrench

September 2008

Features

 R
 R
 Typ Q
 Low Miller Charge
 Qualified to AEC Q101

 RoHS Compliant

DS(on)

DS(on)

= 98mΩ at V
= 82mΩ at V

= 9.2nC at VGS = 10V

g(TOT)

GS

GS

= 4.5V, I
= 10V, I

= 1.6A

D

= 1.7A

D

Applications

 DC/DC converter
 Motor Drives

®

MOSFET

©2008 Fairchild Semiconductor Corporation
FDN5632N_F085 Rev. A (W)

www.fairchildsemi.com1

MOSFET Maximum Ratings T

= 25°C unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GS

I

D

P

D

T

J

Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current Continuous (V

= 10V) 1.7

GS

Pulsed 10
Power Dissipation 1.1 W

, T

Operating and Storage Temperature -55 to +150

STG

Thermal Characteristics

FDN5632N_F085 N-Channel Logic Level PowerTrench

A

o

C

R

θJC

R

θJA

Thermal Resistance Junction to Case 75
Thermal Resistance Junction to Ambient TO-252, 1in2 copper pad area 111

o
o

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

5632 FDN5632N_F085 SSOT3 7” 8mm 3000 units

Electrical Characteristics T

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

B

VDSS

I

DSS

I

GSS

On Characteristics

V

GS(th)

r

DS(on)

Drain to Source Breakdown Voltage ID = 250µA, VGS = 0V 60 - - V
Zero Gate Voltage Drain Current
Gate to Source Leakage Current VGS = ±20V - - ±100 nA

Gate to Source Threshold Voltage VGS = VDS, ID = 250µA12.03V

Drain to Source On Resistance

= 25°C unless otherwise noted

A

V

= 48V, - - 1

DS

= 0V TA = 125oC - - 250

V

GS

= 1.7A, VGS= 10V - 57 82

I

D

I

= 1.6A, VGS= 6V - 62 88

D

= 1.6A, VGS= 4.5V 70 98

I

D

= 1.7A, VGS= 10V,

I

D

T

= 150oC

A

-107135

C/W
C/W

µA

mΩ

®

MOSFET

Dynamic Characteristics

C

iss

C

oss

C

rss

R

G

Q

g(TOT)

Q

gs

Q

gd

Input Capacitance
Output Capacitance - 60 - pF
Reverse Transfer Capacitance - 30 - pF

= 15V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz - 1.4 - Ω
Total Gate Charge at 10V VGS = 0 to 10V
Gate to Source Gate Charge
Gate to Drain “Miller“ Charge - 1.4 - nC

FDN5632N_F085 Rev. A (W) www.fairchildsemi.com2

V

DD

I

D

= 20V

= 1.7A

- 475 - pF

- 9.2 12 nC

-1.5-nC

FDN5632N_F085 N-Channel Logic Level PowerTrench

Electrical Characteristics T

= 25oC unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Switching Characteristics

t

on

t

d(on)

t

r

t

d(off)

t

f

t

off

Turn-On Time
Turn-On Delay Time - 15 - ns
Rise Time - 1.7 - ns
Turn-Off Delay Time - 5.2 - ns
Fall Time - 1.3 - ns
Turn-Off Time - - 12.9 ns

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Source to Drain Diode Voltage
Reverse Recovery Time

Reverse Recovery Charge - 7.9 10.3 nC

= 30V, ID = 1.0A

V

DD

V

= 10V, R

GS

I

= 1.7A - 0.8 1.25

SD

= 0.85A - 0.8 1.0

I

SD

= 1.7A, dISD/dt = 100A/µs

I

SD

GEN

= 6Ω

- - 30 ns

- 16.0 21 ns

V

®

MOSFET

This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For

All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems

FDN5632N_F085 Rev. A (W) www.fairchildsemi.com3

a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/

certification.

Typical Characteristics

FDN5632N_F085 N-Channel Logic Level PowerTrench

1.2

1.0

0.8

0.6

0.4

0.2

POWER DISSIPATION MULTIPLIER

0.0
0 25 50 75 100 125 150

TA, AMBIENT TEMPERATURE(oC)

Figure 1. Normalized Power Dissipation vs

Ambient Temperature

2

DUTY CYCLE - DESCENDING ORDER

1

D = 0.50

0.1

0.20

0.10

0.05

0.02

0.01

SINGLE PULSE
R

= 111oC / W

θJA

-3

10

-2

10

-1

10

t, RECTANGULAR PULSE DURATION(s)

Figure 3.

Normalized Maximum Transient Thermal Impedance

θJA

IMPEDANCE, Z

NORMALIZED THERMAL

0.01

3

CURRENT LIMITED
BY PACKAGE

2

VGS = 10V

1

, DRAIN CURRENT (A)

D

I

R

θ

JA

= 111oC/W

VGS = 4.5V

0

25 50 75 100 125 150

TA, AMBIENT TEMPERATURE

o

(

C

Figure 2. Maximum Continuous Drain Current vs

Ambient Temperature

P

DM

t

1

NOTES:
DUTY FACTOR: D = t1/t

PEAK TJ = PDM x Z

0

10

1

10

2

10

θJA

x R

2

+ T

θJA

3

10

)

®

MOSFET

t

2

A

4

10

100

VGS = 10V

10

, PEAK CURRENT (A)

DM

I

1

-3

10

SINGLE PULSE
R

= 111oC / W

θ

JA

-2

10

-1

10

11010210

t, RECTANGULAR PULSE DURATION(s)

Figure 4. Peak Current Capability

FDN5632N_F085 Rev. A (W) www.fairchildsemi.com4

TC = 25oC
FOR TEMPERATURES

o

ABOVE 25
CURRENT AS FOLLOWS:

I = I

25

C DERATE PEAK

150 - T

125

3

C

4

10

Typical Characteristics

FDN5632N_F085 N-Channel Logic Level PowerTrench

30
10

100us

1

1ms

0.1

, DRAIN CURRENT (A)

D

I

0.01

OPERATION IN THIS
AREA MA Y B E

LIMITED BY

0.001

0.01 0.1 1 10 100 300

r

DS(on)

SINGLE PULSE
T

= MAX RATED

J

o

T

= 25

C

A

10ms
100ms

1s

DC

VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 5.

12

, DRAIN CURRENT (A)

D

I

Forward Bias Safe Operating Area

VGS = 10V

VGS = 6V

9

6

3

0

01234

VGS = 5V
VGS = 4.5V

VGS = 4V

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

VGS = 3.5V

V

= 3V

GS

VDS, DRAIN TO SOURCE VOLTA GE (V)

12

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

= 5V

V

9

DD

6

TJ = 25oC

3

, DRAIN CURRENT (A)

D

I

0

012345

TJ = 150oC

TJ = -55oC

VGS, GATE TO SOURCE VOLTA G E (V)

Figure 6.

Transfer Characteristics

200

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

TJ = 150oC

(mΩ)

150

100

I

= 1.7A

D

, DRAIN TO SOURCE

50

ON-RESISTANCE

DS(on)

r

0

246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

TJ = 25oC

®

MOSFET

Figure 7.

Saturation Characterist ics Figure 8. Drain to Source On-Resistance

2.0

PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX

1.8

1.6

1.4

1.2

NORMALIZED

1.0

0.8

0.6

DRAIN TO SOURCE ON-RESIS TANCE

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE(oC)

Figure 9. Normalized Drain to Source On

ID = 1.7A
V

= 10V

GS

Resistance vs Junction Temperature

FDN5632N_F085 Rev. A (W) www.fairchildsemi.com5

Variation vs Gate to Source Voltage

1.4

V

= V

GS

I

= 250µA

1.2

D

1.0

0.8

NORMALIZED GATE

0.6

THRESHOLD VOLTAGE

0.4

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE(oC)

Fi gu re 10 . Nor malize d Gate Threshold

Voltage vs

Junction Temperature

DS

Typical Characteristics

FDN5632N_F085 N-Channel Logic Level PowerTrench

1.15

I

= 250µA

D

1.10

1.05

1.00

0.95

BREAKDOWN VOLTAGE

NORMALIZED DRAIN TO SOURCE

0.90

-80 -40 0 40 80 120 160

TJ, JUNCTION TEMPERATURE (oC)

Figure 11. Normalized Drain to Source

Breakdown Voltage vs Junction Temperature

10

ID = 1.7A

8

6

4

2

, GATE TO SOURCE VOLTAGE(V)

GS

0

V

036912

VDD = 20V

Q

, GATE CHARGE(nC)

g

VDD = 30V

VDD = 40V

1000

C

iss

100

CAPACITANCE (pF)

f = 1MHz

= 0V

V

GS

10

0.1 1 10 50

VDS, DRAIN TO SOURCE VOLTAGE (V)

C

oss

C

rss

Figure 12. Capacitance vs Drain to

Source

Voltage

®

MOSFET

Figure 13.

FDN5632N_F085 Rev. A (W) www.fairchildsemi.com6

Gate Charge vs Gate to Source Voltage

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Saving our world, 1mW/W/kW at a time™

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are trademarks of System General Corporation, used under license by Fairchild Semiconductor.

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WHICH COVERS THESE PRODUCTS.

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EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEM I CONDUCTOR CORPORATI ON.

As used herein:

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PRODUCT STATUS DEFINITIONS
Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative / In Design

Preliminary First Production

No Identification Needed Full Production

Obsolete Not In Production

Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.

Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.

Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
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datasheet is for reference information only.

Rev. I36

© 2008 Fairchild Semiconductor Corporation www.fairchildsemi.com