Fairchild FDN5630 service manual
FDN5630
60V N-Channel PowerTrench
MOSFET
FDN5630
March 2000
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers.
This MOSFET features very low R
footprint. Fairchild’s PowerTrench technology provides
faster switching than other MOSFETs with comparable
R
specifications. The result is higher overall
DS(ON)
efficiency with less board space.
in a small SOT23
DS(ON)
Features
•
1.7 A, 60 V. R
= 0.100 Ω @ V
DS(ON)
R
= 0.120 Ω @ V
DS(ON)
= 10 V
GS
= 6 V.
GS
• Optimized for use in high frequency DC/DC converters.
• Low gate charge.
• Very fast switching.
• SuperSOT
TM
- 3 provides low R
in SOT23 footprint.
DS(ON)
Applications
• DC/DC converter
• Motor drives
D
D
S
SuperSOT -3
TM
Absolute Maximum Ratings T
G
= 25 C unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 60 V
Gate-Source Voltage
Drain Current - Continuous
(Note 1a)
- Pulsed 10
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range -55 to +150
GS
±
20
1.7 A
0.5 W
0.46
V
°
C
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
Package Marking and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
5630 FDN5630 7 8mm 3000 units
2000 Fairchild Semiconductor Corporation
°
C/W
°
C/W
FDN5630 Rev. C
FDN5630
Electrical Characteristics T
Symbol
Off Characteristics
BV
∆
BV
∆
I
DSS
I
GSSF
I
GSSR
DSS
T
DSS
J
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V 1
Gate-Body Leakage Current,
Forward
Gate-Body Leakage Current,
Reverse
On Characteristics
V
GS(th)
∆
V
∆
R
DS(ON)
I
D(on)
g
FS
GS(th)
T
J
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
On-State Drain Current VGS = 10 V, VDS = 1.7 V 5 A
Forward Transconductance VDS = 10 V, ID = 1.7 A 6 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 400 pF
Output Capacitance 102 pF
Reverse Transfer Capacitance
Parameter Test Conditions Min Typ Max Units
(Note 2)
= 25 C unless otherwise noted
A
= 0 V, ID = 250 µA
V
GS
I
= 250 µA,Referenced to 25°C
D
60 V
63
VGS = 20 V, VDS = 0 V 100 nA
VGS = -20 V, VDS = 0 V -100 nA
V
= VGS, ID = 250 µA
DS
= 250 µA,Referenced to 25°C
I
D
VGS = 10 V, ID = 1.7 A
V
= 10 V, ID = 1.7 A, TJ = 125°C
GS
= 6 V, ID = 1.6 A
V
GS
V
= 15 V, VGS = 0 V,
DS
12.4 3 V
6.9
0.073
0.127
0.083
0.100
0.180
0.120
f = 1.0 MHz
21 pF
mV/°C
µ
A
mV/°C
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g
gs
gd
Turn-On Delay Time 10 20 ns
Turn-On Rise Time 6 15 ns
Turn-Off Delay Time 15 28 ns
Turn-Off Fall Time
Total Gate Charge 7 10 nC
Gate-Source Charge 1.6 nC
Gate-Drain Charge
(Note 2)
V
= 30 V, ID = 1 A,
DD
V
= 10 V, R
GS
V
= 20 V, ID = 1.7 A,
DS
= 10 V,
V
GS
GEN
= 6
Ω
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1: R
θJA
surface of the drain pins. R
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current 0.42 A
Drain-Source Diode Forward
VGS = 0 V, IS = 0.42 A
(Note 2)
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
a) 250°C/W when
is guaranteed by design while R
θJC
mounted on a 0.02 in
Pad of 2 oz. Cu.
is determined by the user's board design.
θJA
2
b) 270°C/W when
mounted on a minimum
pad.
515ns
1.2 nC
0.72 1.2 V
FDN5630 Rev. C
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