Fairchild FDN5618P service manual

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FDN5618P

60V P-Channel Logic Level PowerTrench



MOSFET

FDN5618P

July 2000

PRELIMINARY

General Description

This 60V P-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.

Applications

• DC-DC converters

• Load switch

• Power management

D

Features

• –1.25 A, –60 V. R

R

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

= 0.170 Ω @ VGS = –10 V

DS(ON)

= 0.230 Ω @ VGS = –4.5 V

DS(ON)

D

S

G

SuperSOT -3

TM

Absolute Maximum Ratings T

G

=25oC unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

P

D

TJ, T

STG

Drain-Source Voltage –60 V

Gate-Source Voltage

Drain Current – Continuous (Note 1a) –1.25 A

– Pulsed –10

Maximum Power Dissipation (Note 1a) 0.5

(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

±20

0.46

S

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 250

Thermal Resistance, Junction-to-Case (Note 1) 75

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

618 FDN5618P 7’’ 8mm 3000 units

2000 Fairchild Semiconductor Corporati on

°C/W

°C/W

FDN5618P Rev B(W)

FDN5618P

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

∆BVDSS
===∆T
I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage

Breakdown Voltage Temperature
Coefficient

J

V

= 0 V, ID = –250 µA

GS

I

= –250 µA,Referenced to 25°C

D

-60 V

–58

Zero Gate Voltage Drain Current VDS = –48 V, VGS = 0 V –1

Gate–Body Leakage, Forward VGS = 20V, VDS = 0 V 100 nA

Gate–Body Leakage, Reverse VGS = –20 V VDS = 0 V –100 nA

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
===∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage

Gate Threshold Voltage
Temperature Coefficient

J

Static Drain–Source
On–Resistance

V

= VGS, ID = –250 µA

DS

I

= –250 µA,Referenced to 25°C

D

VGS = –10 V, ID = –1.25 A
V

= –4.5 V, ID = –1.0 A

GS

= –10 V, ID = –3 A TJ=125°C

V

GS

–1 –1.6 –3 V

4

0.148

0.185

0.245

On–State Drain Current VGS = –10 V, VDS = –5 V –5 A

Forward Transconductance VDS = –5 V, ID = –1.25 A 4.3 S

mV/°C

0.170

0.230

0.315

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 430 pF

Output Capacitance 52 pF

Reverse Transfer Capacitance

= –30 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

19 pF

Switching Characteristics (Note 2)

t

t

t

t

Q

Q

Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 6.5 13 ns

Turn–On Rise Time 8 16 ns

= –30 V, ID = –1 A,

V

DD

= –10 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 16.5 30 ns

Turn–Off Fall Time

Total Gate Charge 8.6 13.8 nC

Gate–Source Charge 1.5 nC

= –30 V, ID = –1.25 A,

V

DS

V

= –10 V

GS

Gate–Drain Charge

48ns

1.3 nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current –0.42 A
Drain–Source Diode Forward

VGS = 0 V, IS = –0.42 (Note 2) –0.7 –1.2 V

Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

µA

Ω

a) 250°C/W when mounted on a

2

0.02 in

pad of 2 oz. copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤=300 µs, Duty Cycle ≤=2.0

b) 270°C/W when mounted on a

minimum pad.

FDN5618P Rev B(W)

Typical Characteristics

FDN5618P

5

VGS = -10V

-

4

-4.5V

3

2

1

0

01234

-4.0V

-3.5V

-3.0V

, DRAIN-SO URCE VOLTAGE (V)

-V

DS

-2.5V

2.2

2

VGS = -3.0V

1.8

1.6

1.4

1.2

1

0.8

012345

-3.5V

-4.0V

-I

, DRAIN CURRENT (A)

D

-4.5V

-6.0V

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.3
ID = -1.25A

V

= -10V

GS

1.2

1.1

1

0.9

0.8

-50 -25 0 25 50 75 100 125 150

, JUNCTION TEMPERATURE (oC)

T

J

0.6

0.5

0.4

0.3

0.2
TA = 25oC

0.1

246810

TA = 125oC

-V

, GATE TO SOURCE VOLTAGE (V)

GS

-10V

ID = -0.65 A

Figure 3. On-Resistance Variation

withTemperature.

6

VDS = - 5V

5

4

3

2

1

0

11.522.533.54

, GATE TO SOURCE VOLTAGE (V)

-V

GS

TA = 125oC

25oC

-55oC

Figure 4. On-Resistance Variation with

Gate-to-Source Voltage.

10

VGS = 0V

1

0.1

0.01

0.001

0.0001

0 0.2 0.4 0.6 0.8 1 1.2 1.4

TA = 125oC

25oC

-55oC

-V

, BODY DIODE FOR WARD VOLTAG E (V)

SD

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

FDN5618P Rev B(W)