Fairchild FDN372S service manual
September 2002
FDN372S
30V N-Channel PowerTrench
SyncFET™
FDN372S
General Description
The FDN372S is designed to replace a single MOSFET
and Schottky diode, used in synchronous DC-DC
power supplies, with a single integrated component.
This 30V MOSFET is designed to maximize power
conversion efficiency with low Rds(on) and low gate
charge. The FDN372S includes an integrated Schottky
diode using Fairchild Semiconductor’s monolithic
SyncFET process, making it ideal as the low side
switch in a synchronous converter.
Applications
• DC-DC Converter
• Motor Drives
D
Features
• 2.6 A, 30 V. R
R
• Low gate charge
• Fast switching speed
• High performance trench technology for extremely
low R
DS(ON)
= 40 mΩ @ VGS = 10 V
DS(ON)
= 50 mΩ @ VGS = 4.5 V
DS(ON)
D
S
± 16
0.46
S
V
W
°C
G
SuperSOT -3
TM
Absolute Maximum Ratings T
G
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage 30 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous
– Pulsed 10
PD
TJ, T
STG
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range –55 to +150
(Note 1a)
2.6 A
(Note 1a)
0.5
(Note 1b)
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
372 FDN372S 7’’ 8mm 3000 units
2002 Fairchild Semiconductor Corporation
°C/W
°C/W
FDN372S Rev C(W)
FDN372S
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage VGS = 0 V, ID = 1 mA 30 V
DSS
∆BV
∆T
I
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 500
DSS
I
Gate–Body Leakage VGS = ±16 V, VDS = 0 V ±100 nA
GSS
On Characteristics
V
GS(th)
∆V
GS(th)
∆TJ
R
DS(on)
I
D(on)
Breakdown Voltage Temperature
DSS
J
Coefficient
= 10 mA, Referenced to 25°C
I
D
24
mV/°C
µA
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = 1 mA 1 1.4 3 V
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
I
= 10 mA, Referenced to 25°C
D
VGS = 10 V, ID = 2.6 A
= 4.5 V, ID = 2.3 A
V
GS
V
= 10V, ID = 2.6 A, TJ = 125°C
GS
–3.2
32
40
36
50
45
60
mV/°C
mΩ
On–State Drain Current VGS = 10 V, VDS = 5 V 10 A
gFS Forward Transconductance VDS = 10V, ID = 2.6 A 15 S
Dynamic Characteristics
C
Input Capacitance 630 pF
iss
C
Output Capacitance 115 pF
oss
C
Reverse Transfer Capacitance
rss
Rg Gate Resistance
Switching Characteristics
t
Turn–On Delay Time 7 14 ns
d(on)
(Note 2)
tr Turn–On Rise Time 5 10 ns
t
Turn–Off Delay Time 21 34 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 5.8 8.1 nC
Qgs Gate–Source Charge 1.3 1.9 nC
Qgd Gate–Drain Charge
= 15 V, V
V
DS
f = 1.0 MHz
V
= 15 mV f = 1.0 MHz
GS
= 15 V, ID = 1 A,
V
DD
= 10 V, R
V
GS
= 15 V, ID = 2.6 A,
V
DS
V
= 5 V
GS
= 0 V,
GS
= 6 Ω
GEN
45 pF
2.4
Ω
2.7 5.4 ns
1.2 1.7 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current 0.7 A
VSD Drain–Source Diode Forward
VGS = 0 V, IS = 0.7 A
(Note 2)
440 700 mV
Voltage
trr
Qrr
Notes:
1. R
θJA
the drain pins. R
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
a) 250°C/W when mounted on a
2
pad of 2 oz. copper.
0.02 in
θCA
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
I
= 2.6 A,
F
= 300 A/µs
d
iF/dt
is determined by the user's board design.
(Note 2)
b) 270°C/W when mounted on a
minimum pad.
10 ns
4 nC
FDN372S Rev C(W)
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