Fairchild FDN361AN service manual
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FDN361AN
N-Channel, Logic Level, PowerTrench
ΤΜΤΜ
ΤΜ
ΤΜΤΜ
FDN361AN
April 1999
General Description
This N-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance.
Applications
• DC/DC converter
• Load switch
• Motor drives
D
S
TM
SuperSOT -3
Absolute Maximum Ratings
G
TA=25oC unless otherwise noted
Features
• 1.8 A, 30 V. R
R
DS(on)
DS(on)
= 0.100 Ω @ V
= 0.150 Ω @ V
= 10 V
GS
= 4.5 V.
GS
• Low gate charge ( 2.1nC typical ).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(on)
.
• High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with
30% higher power handling capability.
D
G
S
Symbol Parameter FDN361AN Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 30 V
Gate-Source Voltage - Continuous
Drain Current - Continuous
Note 1a
20 V
±
1.8 A
- Pulsed 8
Power Dissipation for Single Operation
Note 1a
Note 1b
0.5
0.46
Operating and Storage Junction Temperature Range -55 to +150
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
250
75
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
361 FDN361AN 7’’ 8mm 3000 units
1998 Fairchild Semiconductor Corporation
W
C
°
C/W
°
C/W
°
FDN361AN, Rev. C
FDN361AN
DMOS Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆
∆
I
I
I
BV
DSS
GSSF
GSSR
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA30 V
DSS
Breakdown Voltage Temperature
DSS
Coefficient
T
J
Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1
ID = 250 µA, Referenced to 25°C24mV/
A
µ
Gate-Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
Gate-Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
On Characteristics (Note 2)
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage VDS = VGS, ID = 250 µA11.83V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
ID = 250 µA, Referenced to 25°C-4.2mV/
VGS = 10 V, ID = 1.8 A
V
= 10 V, ID = 1.8 A, TJ = 125°C
GS
V
= 4.5 V, ID = 1.4 A
GS
0.072
0.107
0.105
0.1
0.16
0.15
Ω
On-State Drain Current VGS = 10 V, VDS = 5 V 8 A
Forward Transconductance VDS = 10 V, ID = 1.8 A 5 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance VDS = 15 V, VGS = 0 V, f = 1.0 MHz 220 pF
Output Capacitance 50 pF
Reverse Transfer Capacitance 20 pF
Switching Characteristics (Note 2)
C
°
C
°
t
d(on)
t Turn-On Rise Time VGS = 10 V, R
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time VDD = 15 V, ID = 1 A, 3 6 ns
= 6.0
GEN
Ω
Turn-Off Delay Time 7 14 ns
Turn-Off Fall Time 3 6 ns
Total Gate Charge VDS = 15 V, ID = 1.8 A, 2.1 4 nC
Gate-Source Charge VGS = 5 V 0.8 nC
Gate-Drain Charge 0.7 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
surface of the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current 0.42 A
Drain-Source Diode Forward
VGS = 0 V, IS = 0.42 A
(Note 2)
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
θJA
a) 250°C/W when mounted
on a 0.02 in2 pad of 2 oz. Cu.
is guaranteed by design while R
θJC
is determined by the user's board design.
θJA
b) 270°C/W when mounted
on a mininum pad.
11 22 ns
0.75 1.2 V
FDN361AN, Rev. C
Typical Characteristics (continued)
FDN361AN
8
V = 10V
GS
6.0V
4.5V
6
4.0V
3.5V
4
2
D
I , DRAIN-SOURCE CURRENT (A)
0
00.511.522.53
V , DRAIN -SO URCE VO LTAGE (V)
DS
3.0V
Figure 1. On-Region Characteristics.
1.6
I = 1.8 A
D
V = 10 V
GS
1.4
1.2
1
DS(ON)
R , NORM AL I Z ED
0.8
DRAIN-SO URCE ON-RES ISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERAT URE (°C)
J
2.5
2
V = 3. 5V
GS
1.5
DS( ON )
1
R , N OR MALI ZED
DRAIN-SOURCE O N-RESISTANCE
0.5
0246810
4.0V
4.5V
5.0V
I , DRAIN CURRENT (A )
D
7.0V
10V
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0. 3
0. 25
0. 2
0. 15
0. 1
0. 05
DS(ON)
R , ON-RESISTANCE (OHM)
0
246810
V , GATE TO SOURCE VOLTAGE (V)
GS
A
T = 125°C
T = 25°C
A
I = 0.9A
D
Figure 3. On-Resistance Variation
with Temperature.
8
6
V =5.0V
DS
T = -55°C
J
25°C
125° C
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
V = 0V
GS
1
T = 125°C
J
25°C
4
2
D
I , DRAIN CURRENT (A)
0
12345
V , GATE TO SOURCE VOLTAGE (V)
GS
0.1
0. 0 1
S
I , REVERSE DRAIN CURRENT (A)
0.001
0.2 0.4 0.6 0.8 1 1.2
V , BODY DIODE FORWARD VOLTAGE (V)
SD
-55°C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN361AN, Rev. C
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