Fairchild FDN360P service manual
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FDN360P
Single P-Channel PowerTrenchTM MOSFET
FDN360P
February 1999
General Description
This P-Channel Logic Level MOSFET is produced using
Fairchild Semiconductor's advanced PowerTrench process
that has been especially tailored to minimize on-state
resistance and yet maintain superior switching
performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Applications
• DC/DC converter
• Load switch
• Motor drives
D
S
TM
SuperSOT -3
Absolute Maximum Ratings
G
TA = 25°C unless otherwise noted
Features
• -2 A, -30 V. R
R
= 0.080 Ω @ V
DS(on)
= 0.125 Ω @ V
DS(on)
= -10 V
GS
= -4.5 V.
GS
• Low gate charge (5nC typical).
• Fast switching speed.
• High performance trench technology for extremely
low R
DS(ON)
.
• High power and current handling capability .
D
G
S
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage -30 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed -20
Power Dissipation for Si ngl e Operat i on
Operating and Storage Junction Temperature Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
20 V
±
-2 A
0.5 W
0.46
Thermal Characteristics
R
JA
θ
R
JC
θ
Thermal Resistance, J unc tion-to-Ambient
Thermal Resistance, J unc tion-to-Case
(Note 1a)
(Note 1)
250
75
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
360 FDN360P 7’’ 8mm 3000 units
1999 Fairchild Semiconductor Corporation
C
°
C/W
°
C/W
°
FDN360P Rev. D
FDN360P
yp
Electrical Characteristics
TA = 25°C unless otherwise noted
Symbol Parameter Test Conditions Min T
Off Characteristics
BV
DSS
BV
∆
T
∆
I
DSS
I
GSSF
I
GSSR
On Characteristics
V
GS(th)
GS(th)
V
∆
T
∆
R
DS(on)
I
D(on)
g
FS
Drain-Source Breakdown Voltage VGS = 0 V, ID = -250 µA-30 V
Breakdown Voltage Temperature
DSS
Coefficient
J
ID = -250 µA, Referenced to
25°C
Zero Gate Voltage Drain Current VDS = -24 V, VGS = 0 V -1
Gate-Body Leakage Current,
VGS = 20 V, VDS = 0 V 100 nA
Forward
Gate-Body Leakage Current,
VGS = -20 V, VDS = 0 V -100 nA
Reverse
(Note 2)
Gate Threshold Voltage VDS = VGS, ID = -250 µA-1-1.8-3V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain-Source
On-Resistance
ID = -250 µA, Referenced to
25°C
VGS = -10 V, ID = -2 A
V
= -10 V, ID = -2 A, TJ=125°C
GS
= -4.5 V, ID = -1.5 A
V
GS
On-State Drain Current VGS = -10 V, VDS = -5 V -20 A
Forward Transconductance VDS = -5 V, ID = -2 A 5.5 S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 420 pF
Output Capacitance 140 pF
= -15 V, VGS = 0 V,
V
DS
f = 1.0 MHz
Reverse Transfer Capacitance
Max Units
20 mV/°C
-4 mV/°C
0.060
0.080
0.080
0.136
0.095
0.125
60 pF
A
µ
Ω
(Note 2)
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
QgTotal Gate Charge 5 7 nC
Q
gs
Q
gd
Turn-On Delay Time 9 18 ns
Turn-On Rise Time 8 16 ns
Turn-Off Delay Time 18 29 ns
Turn-Off Fall Time
Gate-Source Charge 1.7 nC
Gate-Drain Charge
= -15 V, ID = -1 A,
V
DD
V
= -10 V, R
GS
= -15 V, ID = -2 A,
V
DS
V
= -10 V,
GS
GEN
= 6
Ω
612ns
1.8 nC
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
surface of the drain pins. R
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
Maximum Continuous Drain-Source Diode Forward Current -0.42 A
Drain-Source Diode Forward VoltageVGS = 0 V, IS = -0.42 A
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
θJA
a) 250°C/W when
mounted on a 0.02 in
Pad of 2 oz. Cu.
is guaranteed by design while R
θJC
2
is determined by the user's board design.
θJA
b) 270°C/W when
mounted on a 0.001 in
pad of 2 oz. Cu.
(Note 2)
2
-0.75 -1.2 V
FDN360P Rev. D
T ypical Characteristics
FDN360P
20
16
12
, DRAIN CURRENT (A)
D
-I
VGS= -10V
-6.0V
-5.0V
-4.5V
-4.0V
8
-3.5V
4
0
012345
-V
, DRAIN TO SOURCE VOLTAGE (V)
DS
-3.0V
2.5
2
VGS= -4.0V
1.5
, NORMALIZED
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.5
-4.5V
-5.0V
-6.0V
-7.0V
048121620
, DRAIN CURRENT (A)
-I
D
Figure 1. On-Region Characteristics. Figure 2. On-Resistance V ariation
with Drain Current and Gate V oltage.
1.3
ID= -2.0A
V
= -10V
GS
1.2
1.1
, NORMALIZED
1
DS(ON)
R
0.9
DRAIN-SOURCE ON-RESISTANCE
0.8
-50 -25 0 25 50 75 100 1 25 150
, JUNCTION TEMPERATURE (oC)
T
J
0.25
0.2
0.15
0.1
, ON RESISTANCE (OHM)
0.05
DS(ON)
R
0
2345678910
-V
, GATE TO SOURCE VOLTAGE (V)
GS
TJ=125oC
25oC
-10V
ID= -1.0A
Figure 3. On-Resistance Variation
with Temperature.
10
VDS= -5V
8
6
4
, DRAIN CURRENT (A)
D
-I
2
0
12345
, GATE TO SOURCE VOLTAGE (V)
-V
GS
TJ=-55oC
25oC
125oC
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS= 0V
10
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
-I
0.001
0.2 0.4 0.6 0.8 1 1.2 1.4
TJ=125oC
25oC
-55oC
-V
, BODY DIODE VOLTAGE (V)
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN360P Rev. D
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