Fairchild FDN359BN service manual

FDN359BN

January 2006

FDN359BN

N-Channel Logic Level PowerTrenchTM MOSFET

General Description

This N-Channel Logic Level MOSFET is produced
using Fairchild’s Semiconductor’s advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.

These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.

D

S

SuperSOT -3

TM

Absolute Maximum Ratings T

Symbol Parameter Ratings Units

V

Drain-Source Voltage 30 V

DSS

V

Gate-Source Voltage

GSS

ID

PD

TJ, T

STG

Maximum Drain Current – Continuous (Note 1a) 2.7
– Pulsed 15
Maximum Power Dissipation (Note 1a) 0.5

Operating and Storage Temperature Range

G

o

=25

C unless otherwise noted

A

Features

•

2.7 A, 30 V. R
R

= 0.046 Ω @ VGS = 10 V

DS(ON)

= 0.060 Ω @ VGS = 4.5 V

DS(ON)

• Very fast switching speed.

• Low gate charge (5nC typical)

• High performance version of industry standard

SOT-23 package. Identical pin out to SOT-23 with 30%
higher power handling capability.

G

D

S

±20

(Note 1b)

0.46

−55 to +150 °C

V
A

W

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case

(Note 1a) 250

(Note 1) 75

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

359B FDN359BN 7’’ 8mm 3000 units

©2006 Fairchild Semiconductor Corporation

°C/W
°C/W

FDN359BN Rev A(W)

FDN359BN

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

Drain–Source Breakdown Voltage

DSS

∆BVDSS
∆T

I

Zero Gate Voltage Drain Current

DSS

I

Gate–Body Leakage

GSS

Breakdown Voltage Temperature
Coefficient

J

= 0 V, ID = 250 µA

V

GS

= 250 µA,Referenced to 25°C

I

D

VDS = 24 V, VGS = 0 V 1
T

= ±20 V, VDS = 0 V

V

GS

= -55OC 10

J

30 V

21

mV/°C

µA
µA

±100

nA

On Characteristics (Note 2)

V

Gate Threshold Voltage

GS(th)

∆VGS(th)
∆TJ

R

DS(on)

Gate Threshold Voltage
Temperature Coefficient

Static Drain–Source

On–Resistance

I

On–State Drain Current VGS = 10 V, VDS = 5 V 15 A

D(on)

V

= VGS, ID = 250 µA

DS

= 250 µA,Referenced to 25°C

I

D

= 10 V, ID = 2.7 A

V

GS

= 4.5 V, ID = 2.4 A

V

GS

= 10 V, ID = 2.7 A, TJ = 125°C

V

GS

1 1.8 3 V

–4

0.026

0.032

0.033

0.046

0.060

0.075

mV/°C

Ω

gFS Forward Transconductance VDS = 5V, ID = 2.7 A 11 S

Dynamic Characteristics

C

Input Capacitance 485 650 pF

iss

C

Output Capacitance 105 140 pF

oss

C

Reverse Transfer Capacitance

rss

RG Gate Resistance f = 1.0 MHz 1.8

V

= 15 V, V

DS

f = 1.0 MHz

= 0 V,

GS

65 100 pF

Ω

Switching Characteristics (Note 2)

t

Turn–On Delay Time 7 14 ns

d(on)

tr Turn–On Rise Time 5 10 ns
t

Turn–Off Delay Time 20 35 ns

d(off)

tf Turn–Off Fall Time
Qg Total Gate Charge 5 7 nC
Qgs Gate–Source Charge 1.3 nC
Qgd Gate–Drain Charge

= 15V, ID = 1 A,

V

DD

= 10 V, R

V

GS

= 15 V, ID = 2.7 A,

V

DS

= 5 V

V

GS

GEN

= 6 Ω

2 4 ns

1.8 nC

FDN359BN Rev A(W)