Fairchild FDN359AN service manual
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April 1999
FDN359AN
N-Channel Logic Level PowerTrenchTM MOSFET
General Description Features
This N-Channel Logic Level MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain
superior switching performance.
These devices are well suited for low voltage and
battery powered applications where low in-line power
loss and fast switching are required.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
D
359A
S
TM
SuperSOT -3
G
2.7 A, 30 V. R
R
= 0.046 Ω @ VGS = 10 V
DS(ON)
= 0.060 Ω @ VGS = 4.5 V.
DS(ON)
Very fast switching.
Low gate charge (5nC typical).
High power version of industry standard SOT-23
package. Identical pin out to SOT-23 with 30% higher
power handling capability.
SO-8
SOT-223
D
G
SOIC-16
S
Absolute Maximum Ratings T
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
Drain-Source Voltage 30 V
Gate-Source Voltage ±20 V
Maximum Drain Current - Continuous (Note 1a) 2.7 A
= 25oC unless other wise noted
A
- Pulsed 15
P
D
TJ,T
THERMAL CHARACTERISTICS
R
JA
θ
R
JC
θ
© 1999 Fairchild Semiconductor Corporation
Maximum Power Dissipation (Note 1a) 0.5 W
(Note 1b)
Operating and Storage Temperature Range -55 to 150 °C
STG
0.46
Thermal Resistance, Junction-to-Ambient (Note 1a) 250 °C/W
Thermal Resistance, Junction-to-Case (Note 1) 75 °C/W
FDN359AN Rev.C
Electrical Characteristics (T
= 25 OC unless otherwise noted )
A
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS
BV
∆BV
I
DSS
DSS
DSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 30 V
Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC 23 mV/ oC
/∆T
J
Zero Gate Voltage Drain Current VDS = 24 V, V
= 0 V 1 µA
GS
TJ = 55°C 10 µA
I
GSSF
I
GSSR
Gate - Body Leakage, Forward VGS = 20 V,VDS = 0 V 100 nA
Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note)
V
∆V
R
GS(th)
GS(th)
DS(ON)
Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.6 3 V
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 oC -4 mV/ oC
/∆T
J
Static Drain-Source On-Resistance VGS = 10 V, ID = 2.7 A 0.037 0.046
TJ =125°C 0.055 0.075
VGS = 4.5 V, ID = 2.4 A 0.049 0.06
I
D(ON)
g
FS
On-State Drain Current VGS = 10 V, VDS = 5 V 15 A
Forward Transconductance VDS = 5 V, ID = 2.7 A 9.5 S
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
Input Capacitance VDS = 10 V, VGS = 0 V,
Output Capacitance 120 pF
f = 1.0 MHz
Reverse Transfer Capacitance 45 pF
SWITCHING CHARACTERISTICS (Note)
t
t
t
t
Q
Q
Q
D(on)
r
D(off)
f
g
gs
gd
Turn - On Delay Time VDD = 5 V, ID = 1 A,
Turn - On Rise Time 13 24 ns
VGS = 4.5 V, R
GEN
= 6 Ω
Turn - Off Delay Time 15 27 ns
Turn - Off Fall Time 4 10 ns
Total Gate Charge VDS = 10 V, ID = 2.7 A,
Gate-Source Charge 1.4 nC
VGS = 5 V
Gate-Drain Charge 1.6 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Note:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
JA
θ
design while R
Typical R
Maximum Continuous Drain-Source Diode Forward Current 0.42 A
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A (Note) 0.65 1.2 V
is determined by the user's board design.
CA
θ
using the board layouts shown below on FR-4 PCB in a still air environment :
JA
θ
Ω
480 pF
6 12 ns
5 7 nC
is guaranteed by
JC
θ
o
a. 250
C/W when mounted on
a 0.02 in2 pad of 2oz Cu.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.
o
b. 270
C/W when mounted on
a minimum pad.
FDN359AN Rev.C
Typical Electrical Characteristics
12
V =10V
GS
4.5V
10
6.0V
8
6
4
2
D
I , DRAIN-SOURCE CURRENT (A)
0
0 0.5 1 1.5 2 2.5
3.5V
3.0V
2.5V
V , DRAIN-SOURCE VOLTAGE (V)
DS
Figure 1. On-Region Characteristics.
1.6
I = 2.7 A
D
V = 10 V
GS
1.4
1.2
1
DS(ON)
R , NORMALIZED
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
T , JUNCTION TEMPERATURE (°C)
J
3
2.5
V = 3.0V
GS
2
3.5V
1.5
DS(ON)
R , NORMALIZED
1
DRAIN-SOURCE ON-RESISTANCE
0.5
0 2 4 6 8 10 12
4.0V
4.5V
I , DRAIN CURRENT (A)
D
6.0V
10V
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.15
0.12
0.09
0.06
0.03
DS(ON)
R , ON-RESISTANCE (OHM)
0
0 2 4 6 8 10
V , GATE TO SOURCE VOLTAGE (V)
GS
I = 1.3A
D
T = 125°C
A
T = 25°C
A
Figure 3. On-Resistance Variation
with Temperature.
12
V = 5V
DS
9
6
3
D
I , DRAIN CURRENT (A)
0
1 2 3 4 5
T = -55°C
A
25°C
125°C
V , GATE TO SOURCE VOLTAGE (V)
GS
Figure 5. Transfer Characteristics.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
15
V = 0V
GS
1
0.1
0.01
0.001
S
I , REVERSE DRAIN CURRENT (A)
0.0001
0 0.2 0.4 0.6 0.8 1 1.2 1.4
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
T = 125°C
A
25°C
-55°C
V , BODY DIODE FORWARD VOLTAGE (V)
SD
FDN359AN Rev.C
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