Fairchild FDN339AN service manual
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FDN339AN
N-Channel 2.5V Specified PowerTrench
MOSFET
FDN339AN
November 1999
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced PowerTrench
process that has been especially tailored to minimize the
on-state resistance and yet maintain low gate charge for
superior switching performance.
Applications
• DC/DC converter
• Load switch
D
S
SuperSOT -3
TM
Absolute Maximum Ratings
G
TA = 25°C unless otherwise noted
Features
• 3 A, 20 V. R
= 0.035 Ω @ V
DS(ON)
= 0.050 Ω @ V
R
DS(ON)
= 4.5 V
GS
= 2.5 V.
GS
• Low gate charge (7nC typical).
• High performance trench technology for extremely
low R
DS(ON)
.
• High power and current handling capability.
D
GS
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
stg
Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current - Continuous
- Pulsed 20
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range -55 to +150
(Note 1a)
(Note 1a)
(Note 1b)
8
±
3A
0.5 W
0.46
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Ther mal Resistance, Ju nction-to-Case
(Note 1a)
(Note 1)
250
75
Package Outlines and Ordering Information
Device Marking Device Reel Size Tape Width Quantity
339 FDN339AN 7’’ 8mm 3000 units
1999 Fairchild Semiconductor Corporation
V
C
°
C/W
°
C/W
°
FDN339AN Rev. C
FDN339AN
Electrical Characteristics T
Symbol
Off Characteristics
BV
DSS
∆
BV
∆
T
I
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1
DSS
I
GSSF
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
DSS
Coefficient
J
Gate-Body Leakage Current,
Parameter
= 25°C unless otherwise noted
A
Test Conditions
= 0 V, ID = 250 µA
V
GS
= 250 µA,Referenced to 25°C
I
D
Min
Typ Max Units
20 V
14
VGS = 8 V, VDS = 0 V 100 nA
mV/°C
µ
A
Forward
I
Gate-Body Leakage Current,
GSSR
On Characteristics
V
GS(th)
∆
GS(th)
V
∆
T
R
DS(on)
Reverse
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
J
S tatic Drain-Source
On-Resistance
I
On-State Drain Current VGS = 4.5 V, VDS = 5 V 10 A
D(on)
VGS = -8 V, VDS = 0 V -100 nA
V
= VGS, ID = 250 µA
DS
= 250 µA,Referenced to 25°C
I
D
VGS = 4.5 V, ID = 3 A
= 4.5 V, ID = 3 A, TJ=125°C
V
GS
= 2.5 V, ID = 2.4 A
V
GS
0.4 0.85 1.5 V
-3
0.029
0.040
0.039
0.035
0.061
0.050
mV/°C
Ω
gFS Forward Transconductance VDS = 5 V, ID = 3 A 11 S
Dynamic Characteristics
C
Input Capacitance 700 pF
iss
C
Output Capacitance 175 pF
oss
C
Revers e Transfer Capacitance
rss
Switching Characteristics
t
Turn-On Delay Time 8 16 ns
d(on)
tr Turn-On Rise Time 10 18 ns
t
Turn-Off Delay Time 18 29 ns
d(off)
tf Turn-Off Fall Time
Qg Total Gate Charge 7 10 nC
Qgs Gate-Source Charge 1.2 nC
Qgd Gate-Drain Charge
Drain-Source Diode Characteristics and Maximum Ratings
V
= 10 V, VGS = 0 V,
DS
f = 1.0 MHz
85 pF
(Note 2)
V
= 10 V, ID = 1 A,
DD
= 4.5 V, R
V
GS
GEN
= 6 Ω
5 10 ns
V
= 10 V, ID = 3 A,
DS
= 4.5 V
V
GS
1.9 nC
IS Maximum Continuous Drain-Source Diode Forward Current 0.42 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.42 A
Notes:
1: R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting
θJA
surface of the drain pins. R
is guaranteed by design while R
θJC
2)
is determined by the user's board design.
θCA
(Note
0.65 1.2 V
a) 250°C/W when
mounted on a 0.02 in
Pad of 2 oz. Cu.
Scale 1 : 1 on letter size paper
2: Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
2
b) 270°C/W on a minimum
mounting pad of 2 oz. Cu.
FDN339AN Rev. C
T ypical Characteristics
FDN339AN
20
VGS = 4.5V
16
12
8
, DRAIN CURRENT (A)
D
I
4
0
00.511.522.53
3.0V
2.5V
2.0V
V
, DRAIN TO SOURCE VOLTAGE (V)
DS
1.5V
2
1.8
VGS = 2.0V
1.6
1.4
, NORMALIZED
1.2
DS(ON)
R
1
DRAIN-SOURCE ON-RESISTANCE
0.8
0 4 8 12 16 20
2.5V
3.0V
, DRAIN CURRENT (A)
I
D
3.5V
4.0V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation
with Drain Current and Gate V oltage.
1.6
ID = 3A
V
= 4.5V
GS
1.4
1.2
, NORMALIZED
1
DS(ON)
R
0.8
DRAIN-SOURCE ON-RESISTANCE
0.6
-50 -25 0 25 50 75 100 125 150
, JUNCTION TEMPERATURE (oC)
T
J
0.1
0.08
0.06
0.04
, ON-RESISTANCE (OHM)
0.02
DS(ON)
R
0
12345
, GATE TO SOURCE VOLTAGE (V)
V
GS
TA = 125oC
TA = 25oC
4.5V
ID = 1.5A
Figure 3. On-Resistance Variation
with Temperature.
20
VDS = 5V
16
12
8
, DRAIN CURRENT (A)
D
I
4
0
0.5 1 1.5 2 2.5 3
V
, GATE TO SOURCE VOLTAGE (V)
GS
TA = -55oC
25oC
125oC
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
VGS = 0V
10
1
0.1
0.01
0.001
, REVERSE DRAIN CURRENT (A)
S
I
0.0001
0 0.2 0.4 0.6 0.8 1 1.2
TA = 125oC
25oC
-55oC
, BODY DIODE FORWARD VOLTAGE (V)
V
SD
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDN339AN Rev. C
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