Fairchild FDN338P service manual
FDN338P
FDN338P
P-Channel 2.5V Specified PowerTrench MOSFET
September 2001
General Description
This P-Channel 2.5V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
D
Features
• –1.6 A, –20 V. R
R
• Fast switching speed
• High performance trench technology for extremely
low R
• SuperSOTTM -3 provides low R
power handling capability than SOT23 in the same
footprint
DS(ON)
= 115 m Ω @ VGS = –4.5 V
DS(ON)
= 155 m Ω @ VGS = –2.5 V
DS(ON)
and 30% higher
DS(ON)
D
S
G
SuperSOT -3
TM
Absolute Maximum Ratings T
G
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous –1.6 A
– Pulsed –5
Maximum Power Dissipation (Note 1a) 0.5 PD
(Note 1b)
TJ, T
Operating and Storage Junction Temperature Range –55 to +150
STG
±8
0.46
S
°C
V
W
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
.338 FDN338P 7’’ 8mm 3000 units
2001 Fairchild Semiconductor Corporation FDN338P Rev F(W)
Electrical Characteristics T
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
DSS
I
GSSF
I
GSSR
Breakdown Voltage Temperature
Coefficient
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA
VGS = 0 V, ID = –250 µA
ID = –250 µA, Referenced to 25°C
–20 V
–16
mV/°C
µA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = –250 µA
ID = –250 µA, Referenced to 25°C
VGS = –4.5 V, ID = –1.6 A
VGS = –2.5 V, ID = –1.3 A
VGS = –4.5 V, ID = –1.6 A, TJ=125°C
I
On–State Drain Current VGS = –4.5 V, VDS = –5 V –5 A
D(on)
–0.4 –0.8 –1.5 V
2.7
88
117
116
115
155
165
mV/°C
m Ω
gFS Forward Transconductance VDS = –5 V, ID = –1.6 A 6 S
Dynamic Characteristics
C
Input Capacitance 451 pF
iss
C
Output Capacitance 75 pF
oss
C
Reverse Transfer Capacitance
rss
VDS = –10 V, V
f = 1.0 MHz
= 0 V,
GS
33 pF
Switching Characteristics (Note 2)
t
Turn–On Delay Time 10 20 ns
d(on)
tr Turn–On Rise Time 11 20 ns
t
Turn–Off Delay Time 16 29 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 4.4 6.2 nC
Qgs Gate–Source Charge 1.1 nC
Qgd Gate–Drain Charge
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, R
GEN
= 6 Ω
VDS = –10 V, ID = –1.6 A,
VGS = –4.5 V
6.5 13 ns
0.7 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –0.42 A
VSD Drain–Source Diode Forward
Voltage
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
is guaranteed by design while R
θJC
a) 250°C/W when mounted on a
2
0.02 in
pad of 2 oz. copper.
θCA
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VGS = 0 V, IS = –0.42 (Note 2) –0.7 –1.2 V
is determined by the user's board design.
b) 270°C/W when mounted on a
minimum pad.
FDN338P Rev F(W)
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