Fairchild FDN327N service manual
FDN327N
FDN327N
N-Channel 1.8 Vgs Specified PowerTrench MOSFET
October 2001
General Description
This 20V N-Channel MOSFET uses Fairchild’s high
voltage PowerTrench process. It has been optimized for
power management applications.
Features
• 2 A, 20 V. R
R
= 70 mΩ @ VGS = 4.5 V
DS(ON)
R
= 80 mΩ @ VGS = 2.5 V
DS(ON)
= 120 mΩ @ VGS = 1.8 V
DS(ON)
Applications
• Load switch
• Battery protection
• Power management
D
• Low gate charge (4.5 nC typical)
• Fast switching speed
• High performance trench technology for extremely
low RDS(ON)
D
S
G
SuperSOT -3
TM
Absolute Maximum Ratings T
G
=25oC unless otherwise noted
A
Symbol Parameter Ratings Units
V
DSS
V
GSS
I
D
P
D
TJ, T
STG
Drain-Source Voltage 20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) 2 A
– Pulsed 8
Power Dissipation for Single Operation (Note 1a) 0.5
(Note 1b)
Operating and Storage Junction Temperature Range –55 to +150
± 8
0.46
S
V
W
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
Thermal Resistance, Junction-to-Case (Note 1) 75
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
327 FDN327N 7’’ 8mm 3000 units
2001 Fairchild Semiconductor Corporation
°C/W
°C/W
FDN327N Rev C (W)
Electrical Characteristics T
FDN327N
= 25°C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
∆BVDSS
∆T
I
DSS
I
GSSF
I
GSSR
Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 20 V
Breakdown Voltage Temperature
Coefficient
J
ID = 250 µA,Referenced to 25°C 12 mV/°C
Zero Gate Voltage Drain Current VDS = 16 V, VGS = 0 V 1 µA
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V, VDS = 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
∆VGS(th)
∆T
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage VDS = VGS, ID = 250 µA 0.4 0.7 1.5 V
Gate Threshold Voltage
Temperature Coefficient
J
Static Drain–Source
On–Resistance
ID = 250 µA,Referenced to 25°C
VGS = 4.5 V, ID = 2.0 A
VGS = 2.5 V, ID = 1.9 A
VGS = 1.8 V, ID = 1.6 A
V
= 4.5V, ID = 2 A, TJ = 125°C
GS
–3 mV/°C
40
49
65
55
On–State Drain Current VGS = 4.5V, VDS = 5 V 8 A
Forward Transconductance VDS = 5V, ID = 2 A 11 S
70
80
120
103
mΩ
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance 423 pF
Output Capacitance 87 pF
Reverse Transfer Capacitance
VDS = 10 V, V
f = 1.0 MHz
GS
= 0 V
48 pF
Switching Characteristics (Note 2)
t
t
t
t
Q
Q
Q
d(on)
r
d(off)
f
g
gs
gd
Turn–On Delay Time 6 12 ns
Turn–On Rise Time 6.5 13 ns
VDD = 10 V, ID = 1 A,
VGS = 4.5 V, R
GEN
= 6 Ω
Turn–Off Delay Time 14 29 ns
Turn–Off Fall Time
Total Gate Charge 4.5 6.3 nC
Gate–Source Charge 0.89 nC
VDS = 10 V, ID = 2 A,
VGS = 4.5 V
Gate–Drain Charge
2 4 ns
0.95 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Notes:
1. R
θJA
the drain pins. R
Maximum Continuous Drain–Source Diode Forward Current 0.42 A
Drain–Source Diode Forward
VGS = 0 V, IS = 0.42 A (Note 2) 0.6 1.2 V
Voltage
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
is guaranteed by design while R
θJC
is determined by the user's board design.
θCA
a) 250°C/W when mounted on a
2
0.02 in
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
b) 270°C/W when mounted on a
minimum pad.
FDN327N Rev C (W)
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