Fairchild FDN304PZ service manual
March 2003
FDN304P
Z
FDN304PZ
P-Channel 1.8V Specified PowerTrench MOSFET
General Description
This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
• Battery management
• Load switch
• Battery protection
D
S
SuperSOT -3
TM
G
Features
• –2.4 A, –20 V. R
R
R
• Fast switching speed
• ESD protection diode
• High performance trench technology for extremely
low R
• SuperSOTTM -3 provides low R
power handling capability than SOT23 in the same
footprint
DS(ON)
G
= 52 mΩ @ VGS = –4.5 V
DS(ON)
= 70 mΩ @ VGS = –2.5 V
DS(ON)
= 100 mΩ @ VGS = –1.8 V
DS(ON)
and 30% higher
DS(ON)
D
S
Absolute Maximum Ratings T
o
=25
C unless otherwise noted
A
Symbol Parameter Ratings Units
V
Drain-Source Voltage –20 V
DSS
V
Gate-Source Voltage
GSS
ID Drain Current – Continuous (Note 1a) –2.4 A
– Pulsed –10
Maximum Power Dissipation (Note 1a) 0.5 PD
(Note 1b)
TJ, T
Operating and Storage Junction Temperature Range –55 to +150
STG
±8
W
0.46
°C
Thermal Characteristics
R
θJA
R
θJC
Thermal Resistance, Junction-to-Ambient (Note 1a) 250
Thermal Resistance, Junction-to-Case (Note 1) 75
°C/W
°C/W
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
04Z FDN304PZ 7’’ 8mm 3000 units
2003 Fairchild Semiconductor Corporation
FDN304PZ Rev C (W)
V
Electrical Characteristics T
Symbol
Parameter Test Conditions Min Typ Max Units
= 25°C unless otherwise noted
A
Off Characteristics
BV
Drain–Source Breakdown Voltage
DSS
∆BVDSS
∆TJ
I
Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
DSS
I
Gate–Body Leakage
GSS
Breakdown Voltage Temperature
Coefficient
VGS = 0 V, ID = –250 µA
ID = –250 µA,Referenced to 25°C
VGS = ±8 V, VDS = 0 V
–20 V
–13
mV/°C
µA
±10
uA
On Characteristics (Note 2)
V
Gate Threshold Voltage
GS(th)
∆VGS(th)
∆TJ
R
DS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
VDS = VGS, ID = –250 µA
ID = –250 µA,Referenced to 25°C
VGS = –4.5 V, ID = –2.4 A
VGS = –2.5 V, ID = –2.0 A
VGS = –1.8V, ID = –1.8 A
I
On–State Drain Current VGS = –4.5 V, VDS = –5 V –10 A
D(on)
–0.4 –0.8 –1.5 V
3
36
47
65
52
70
100
mV/°C
mΩ
gFS Forward Transconductance VDS = –5 V, ID = –1.25 A 12 S
Dynamic Characteristics
C
Input Capacitance 1310 pF
iss
C
Output Capacitance 240 pF
oss
C
Reverse Transfer Capacitance
rss
RG Gate Resistance
VDS = –10 V, V
= 0 V,
GS
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
106 pF
5.6
Ω
Switching Characteristics (Note 2)
t
Turn–On Delay Time 15 27 ns
d(on)
tr Turn–On Rise Time 15 27 ns
t
Turn–Off Delay Time 40 64 ns
d(off)
tf Turn–Off Fall Time
Qg Total Gate Charge 12 20 nC
Qgs Gate–Source Charge 2 nC
Qgd Gate–Drain Charge
VDD = –10 V, ID = –1 A,
VGS = –4.5 V, R
GEN
= 6 Ω
VDS = –10 V, ID = –2.4 A,
VGS = –4.5 V
25 40 ns
2 nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current –0.42 A
VSD Drain–Source Diode Forward
Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Notes:
1. R
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
θJA
the drain pins. R
is guaranteed by design while R
θJC
a) 250°C/W when mounted on a
2
0.02 in
pad of 2 oz. copper.
θCA
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
VGS = 0 V, IS = –0.42 (Note 2) –0.6 –1.2 V
IF = –2.4 A,
diF/dt = 100 A/µs
is determined by the user's board design.
b) 270°C/W when mounted on a
minimum pad.
18
7
FDN304PZ Rev C (W)
ns
nC
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