Fairchild FDN304P service manual

FDN304P

P-Channel 1.8V Specified PowerTrench



MOSFET

FDN304P

January 2001

General Description

This P-Channel 1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.

Applications

• Battery management

• Load switch

• Battery protection

D

Features

• –2.4 A, –20 V. R
R
R

• Fast switching speed

• High performance trench technology for extremely

low R

DS(ON)

• SuperSOTTM -3 provides low R
power handling capability than SOT23 in the same
footprint

= 52 mΩ @ VGS = –4.5 V

DS(ON)

= 70 mΩ @ VGS = –2.5 V

DS(ON)

= 100 mΩ @ VGS = –1.8 V

DS(ON)

and 30% higher

DS(ON)

D

S

G

SuperSOT -3

TM

Absolute Maximum Ratings T

G

=25oC unless otherwise noted

A

Symbol Parameter Ratings Units

V

DSS

V

GSS

I

D

D

TJ, T

STG

Drain-Source Voltage –20 V
Gate-Source Voltage
Drain Current – Continuous (Note 1a) –2.4 A

– Pulsed –10

Maximum Power Dissipation (Note 1a) 0.5P

(Note 1b)

Operating and Storage Junction Temperature Range –55 to +150

±8

0.46

S

V

W

°C

Thermal Characteristics

R

θJA

R

θJC

Thermal Resistance, Junction-to-Ambient (Note 1a) 250
Thermal Resistance, Junction-to-Case (Note 1) 75

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity

304 FDN304P 7’’ 8mm 3000 units

2001 Fairchild Semiconductor Corporation

°C/W
°C/W

FDN304P Rev C(W)

Electrical Characteristics T

= 25°C unless otherwise noted

A

Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics

BV

DSS

∆BVDSS
∆T

I

DSS

I

GSSF

I

GSSR

Drain–Source Breakdown Voltage
Breakdown Voltage Temperature

Coefficient

J

V

= 0 V, ID = –250 µA

GS

I

= –250 µA,Referenced to 25°C

D

–20 V

–13

Zero Gate Voltage Drain Current VDS = –16 V, VGS = 0 V –1
Gate–Body Leakage, Forward VGS = 8 V, VDS = 0 V 100 nA
Gate–Body Leakage, Reverse VGS = –8 V VDS = 0 V –100 nA

mV/°C

On Characteristics (Note 2)

V

GS(th)

∆VGS(th)
∆T

R

DS(on)

I

D(on)

g

FS

Gate Threshold Voltage
Gate Threshold Voltage

Temperature Coefficient

J

Static Drain–Source
On–Resistance

V

= VGS, ID = –250 µA

DS

I

= –250 µA,Referenced to 25°C

D

VGS = –4.5 V, ID = –2.4 A

= –2.5 V, ID = –2.0 A

V

GS

= –1.8V, ID = –1.8 A

V

GS

–0.4 –0.8 –1.5 V

3

36
47
65

On–State Drain Current VGS = –4.5 V, VDS = –5 V –10 A
Forward Transconductance VDS = –5 V, ID = –1.25 A 12 S

52
70

100

mV/°C

mΩ

Dynamic Characteristics

C

iss

C

oss

C

rss

Input Capacitance 1312 pF
Output Capacitance 240 pF
Reverse Transfer Capacitance

= –10 V, V

V

DS

f = 1.0 MHz

GS

= 0 V,

106 pF

Switching Characteristics (Note 2)

t
t
t
t
Q
Q
Q

d(on)

r

d(off)

f

g

gs

gd

Turn–On Delay Time 15 27 ns
Turn–On Rise Time 15 27 ns

= –10 V, ID = –1 A,

V

DD

= –4.5 V, R

V

GS

GEN

= 6 Ω

Turn–Off Delay Time 40 64 ns
Turn–Off Fall Time
Total Gate Charge 12 20 nC
Gate–Source Charge 2 nC

V

= –10 V, ID = –2.4 A,

DS

= –4.5 V

V

GS

Gate–Drain Charge

25 40 ns

2nC

Drain–Source Diode Characteristics and Maximum Ratings

I

S

V

SD

Notes:

1. R

θJA

the drain pins. R

Maximum Continuous Drain–Source Diode Forward Current –0.42 A
Drain–Source Diode Forward

VGS = 0 V, IS = –0.42 (Note 2) –0.6 –1.2 V

Voltage

is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of

is guaranteed by design while R

θJC

is determined by the user's board design.

θCA

µA

a) 250°C/W when mounted on a

2

0.02 in

pad of 2 oz. copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

b) 270°C/W when mounted on a

minimum pad.

FDN304P Rev C(W)