Fairchild FDMS8888 service manual

FDMS8888 NNNN

N-Channel PowerTrench® MOSFET

30 V, 21 A, 9.5 m: Features

 Max r

DS(on)

 Max r

DS(on)

 Advanced Package and Silicon combination for low r

 MSL1 robust package design

 RoHS Compliant

5 m: at V

= 9.

= 14.5 m: at VGS = 4.5 V, ID = 10.9 A

and high efficiency

DS(on)

GS

= 10 V

I

,

= 13.5 A

D

July 2011

General Description

FDMS8888

The conversion application. Advancements in both silicon

package technologies have been combined to offer the lowest

while maintaining excellent switching performance.

r

DS(on)

has been designed to minimize losses in

power

and

Applications

 Synchronous Buck for Notebook Vcore and S

 Notebook Battery Pack

 Load Switch

erver

FDMS8888

N-Channel PowerTrench

®

MOSFET

Top

D

Bottom

D

Pin 1

S

G

D

5

D

6

D

7

8

D

4

3

2

1

Power 56

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25 °C 21

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 80

Single Pulse Avalanche Energy (Note 3) 54 Power Dissipation TC = 25 °C

Power Dissipation T

Operating and Storage Junction Temperature Range

= 25 °C unless otherwise noted

A

= 25 °C51

C

= 25 °C (Note 1a) 13.5

A

= 25 °C (Note 1a)

A

42

2.5

-55 to +150

Thermal Characteristics

G

S

A

mJ

W

°C

R

TJC

R

TJA

Thermal Resistance, Junction to Case 3.3

Thermal Resistance, Junction to Ambient

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

8888

FDMS8888

Power 56 13 ’’ 12 mm 3000 units

1

(Note 1a) 50

°C/W

www.fairchildsemi.com

FDMS8888

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter T

Off Characteristics

BV

'BV 'T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V

Breakdown Voltage Temperature Coefficient

I

= 250 PA, referenced to 25 °C 19 mV/°C

D

Zero Gate Voltage Drain Current VDS = 24 V, VGS= 0 V 1 PA

Gate to Source Leakage Current VGS = ±20 V, VDS= 0 V ±100nA

On Characteristics

V

GS(th)

'V 'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.2 1.9 2.5 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 PA, referenced to 25 °C -7 mV/°C

D

V

GS

V

GS

Forward Transconductance VDD = 10 V, ID = 13.5 A 78 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 234 315 pF

Reverse Transfer Capacitance 161 245 pF

V

DS

f = 1 MHz

Gate Resistance 0.9 2.5 :

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g

gs

gd

-On Delay Time

Turn

Rise Time 612ns

Turn-Off Delay Time 23 27 ns

V

DD

V

GS

Fall Time 410ns

Total Ga

te Charge V

GS

Total Gate Charge VGS= 0 V to 5 V 13 18 nC

Gate to Source Charge 3.5 nC

Gate to Drain “Miller” Charge 5.1 nC

est Conditions Min Typ Max Units

= 10 V, I

= 13.5 A 8 9.5

D

= 4.5 V, ID = 10.9 A 11 14.5

= 10 V, ID = 13.5 A, TJ = 125 °C

= 15 V, VGS = 0 V,

12 14.5

1195 1585 pF

918ns

= 15 V, ID = 13.5 A, = 10 V, R

= 0 V to 10 V

GEN

= 6 :

V

DD

I

D

23 33 nC

= 15 V,

= 13.5 A

N-Channel PowerTrench

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.

3. Starting T

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 816nC

= 25 °C, L = 0.3 mH, IAS = 19 A, VDD = 27 V, VGS = 10 V.

J

V

I

a. 50 °C/W when mounted on

2

pad of 2 oz copper.

a 1 in

= 0 V, IS= 2.1 A (Note 2) 0.74 1.2 V

GS

= 0 V, IS= 13.5 A (Note 2) 0.84 1.2 V

GS

= 13.5 A, di/dt = 100 A/Ps

F

2

TJC

b. 125 °C/W when mounted on a minimum pad of 2 oz copper.

20 32 ns

is guaranteed by design while R

TCA

www.fairchildsemi.com

is determined by

FDMS8888

Typical Characteristics T

80

60

VGS = 10 V

VGS = 6 V

VGS = 4.5 V

40

20

, DRAIN CURRENT (A)

D

I

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 1.

1.8

1.6

On Region Characteristics Figure 2.

ID = 13.5 A V

= 10 V

GS

1.4

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

= 25 °C unless otherwise noted

J

VGS = 3.5 V

VGS = 3

V

4.0

3.5

3.0

2.5

V

VGS = 3

VGS = 3.5 V

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

2.0

V

=4.5 V

NORMALIZED

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5 0 20 40 60 80

I

D

GS

V

GS

, DR

AIN CURRENT (A)

=10 V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

40

(m:)

30

ID= 13.5 A

PULSE DURATION = 80 Ps DUTY CY

CLE

VGS = 6 V

= 0.5%

N-Channel PowerTrench

®

MOSFET

MAX

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (

J

o

C)

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

80

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

60

VDS= 5 V

40

TJ = 150 oC

20

, DRAIN CURRENT (A)

D

I

0

0 12345

GATE TO SOURCE VOLTAGE (V)

VGS,

TJ = 25 oC

TJ = -55 oC

20

DRAIN TO

,

DS(on)

r

10

SOURCE ON-RESISTANCE

0

246810

V

, GA

TE TO SOURCE VOLTAGE (V)

GS

Figure 4.

O n - R e s is t a n c e v s Ga t e t o

TJ= 150 oC

TJ= 25 oC

Source Voltage

100

V

= 0 V

GS

10

1

o

75

TJ= 1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

C

VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = 25 oC

TJ = -55 oC

Figure 5. Transfer Characteristics

C

Figure 6.

S o u r ce t o D r a i n Di o d e

Forward Voltage vs Source Current

3

www.fairchildsemi.com