Fairchild FDMS8880 service manual

FDMS8880

N-Channel PowerTrench® MOSFET

30 V, 21 A, 8.5 m:
Features

 Max r

 Max r

 Advanced Package and Silicon combination

for low r

 MSL1 robust package design

 RoHS Compliant

= 8.5 m: at VGS = 10 V, ID = 13.5 A

DS(on)

= 13.0 m: at VGS = 4.5 V, ID = 10.9 A

DS(on)

and high efficiency

DS(on)

May 2009

General Description

The FDMS8880 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest

while maintaining excellent switching performance.

r

DS(on)

Applications

 Synchronous Buck for Notebook Vcore and Server

 Notebook Battery Pack

 Load Switch

FDMS8880 N-Channel PowerTrench

®

MOSFET

Top

D

Bottom

D

D

D

Pin 1

S

S

S

G

D

5

D

6

D

7

8

D

4

3

2

1

Power 56

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25 °C 21

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 80

Single Pulse Avalanche Energy (Note 3) 60 mJ

Power Dissipation TC = 25 °C 42

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 51

C

= 25 °C (Note 1a) 13.5

A

= 25 °C (Note 1a) 2.5

A

Thermal Characteristics

G

S

S

S

A

W

R

TJC

R

TJA

Thermal Resistance, Junction to Case 3.3

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS8880 FDMS8880 Power 56 13 ’’ 12 mm 3000 units

©2009 Fairchild Semiconductor Corporation
FDMS8880 Rev.C1

°C/W

1

www.fairchildsemi.com

FDMS8880 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 30 V

Breakdown Voltage Temperature
Coefficient

I

= 250 PA, referenced to 25 °C 19 mV/°C

D

Zero Gate Voltage Drain Current VDS = 24 V, VGS= 0 V 1 PA

Gate to Source Leakage Current VGS = ±20 V, VDS= 0 V ±100 nA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 1.2 1.9 2.5 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 PA, referenced to 25 °C -7 mV/°C

D

V

= 10 V, ID = 13.5 A 6.3 8.5

GS

= 4.5 V, ID = 10.9 A 9.0 13.0

GS

= 10 V, ID = 13.5 A, TJ = 125 °C 9.6 13.0

V

GS

Forward Transconductance VDD = 10 V, ID = 13.5 A 78 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 234 315 pF

Reverse Transfer Capacitance 161 245 pF

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 0.9 1.8 :

1195 1585 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

Turn-On Delay Time

Rise Time 612ns

Turn-Off Delay Time 23 27 ns

V

= 15 V, ID = 13.5 A,

DD

= 10 V, R

V

GS

GEN

= 6 :

Fall Time 410ns

g

g

gs

gd

Total Gate Charge VGS= 0 V to 10 V

Total Gate Charge VGS= 0 V to 5 V 13 18 nC

Gate to Source Charge 3.5 nC

V

= 15 V,

DD

= 13.5 A

I

D

Gate to Drain “Miller” Charge 5.1 nC

918ns

23 33 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.

3.Starting TJ = 25 °C, L = 0.3 mH, IAS = 19 A, VDD = 27 V, VGS = 10 V.

©2009 Fairchild Semiconductor Corporation
FDMS8880 Rev.C1

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 8 16 nC

a. 50 °C/W when mounted on
a 1 in

2

pad of 2 oz copper.

V

= 0 V, IS= 2.1 A (Note 2) 0.74 1.2 V

GS

= 0 V, IS= 13.5 A (Note 2) 0.84 1.2 V

V

GS

= 13.5 A, di/dt = 100 A/Ps

I

F

2

TJC

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

20 32 ns

is guaranteed by design while R

TCA

www.fairchildsemi.com

is determined by

FDMS8880 N-Channel PowerTrench

Typical Characteristics T

80

60

VGS = 10 V

VGS = 6 V

VGS = 4.5 V

40

20

, DRAIN CURRENT (A)

D

I

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 1.

1.8

1.6

On Region Characteristics Figure 2.

ID = 13.5 A
V

= 10 V

GS

1.4

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

= 25 °C unless otherwise noted

J

VGS = 3.5 V

VGS = 3 V

4.0

3.5

3.0

2.5

VGS = 3 V

VGS = 3.5 V

2.0

NORMALIZED

1.5

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5
0 20406080

I

, DRAIN CURRENT (A)

D

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

V

V

GS

GS

=4.5 V

=10 V

VGS = 6 V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

40

(m:)

30

ID= 13.5 A

PULSE DURATION = 80 P s
DUTY CYCLE = 0.5% MAX

®

MOSFET

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (

J

o

C)

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

80

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

60

VDS= 5 V

40

TJ = 150 oC

20

, DRAIN CURRENT (A)

D

I

0

012345

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25 oC

TJ = -55 oC

20

DRAIN TO

,

DS(on)

r

10

SOURCE ON-RESISTANCE

0

246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

Figure 4.

O n - R es i s t a n c e vs G a t e t o

TJ= 150 oC

TJ= 25 oC

Source Voltage

100

V

= 0 V

GS

10

1

TJ= 175 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

TJ = 25 oC

TJ = -55 oC

Figure 5. Transfer Characteristics

9 Fairchild Semiconductor Corporation

©200
FDMS8880 Rev.C

1

Figure 6.

S o u r ce t o D r a i n Di o d e

Forward Voltage vs Source Current

3

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