Fairchild FDMS8692, FDMS8692 Schematics

FDMS8692

N-Channel PowerTrench® MOSFET

30V, 28A, 9.0m:

Features

 Max r

 Max r

 Advanced Package and Silicon combination for

low r

 MSL1 robust package design

 RoHS Compliant

= 9.0m:at VGS = 10V, ID = 12A

DS(on)

= 14.0m: at VGS = 4.5V, ID = 10.5A

DS(on)

and high efficiency

DS(on)

May 2009

General Description

The FDMS8692 has been designed to minimize losses in power
conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest

while maintaining excellent switching performance.

r

DS(on)

Applications

 Low Side for Synchronous Buck to Power Core Processor

 Secondary Side Synchronous Rectifier

 Low Side Switch in POL DC/DC Converter

 Oring FET/ Load Switch

tm

FDMS8692 N-Channel PowerTrench

®

MOSFET

Top

D

Bottom

D

D

D

Pin 1

S

S

S

G

5

D

6

D

7

D

8

D

G

4

S

3

S

2

1

S

Power 56

MOSFET Maximum Ratings

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

TJ, T

STG

Drain to Source Voltage 30 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25°C 28

-Continuous (Silicon limited) T

-Continuous TA= 25°C (Note 1a) 12

-Pulsed 120

Single Pulse Avalanche Energy (Note 3) 72 mJ

Power Dissipation TC = 25°C 41

Power Dissipation TA = 25°C (Note 1a) 2.5

Operating and Storage Junction Temperature Range -55 to +150 °C

TA= 25°C unless otherwise noted

= 25°C 48

C

Thermal Characteristics

A

W

R

TJC

R

TJA

Thermal Resistance, Junction to Case 3.0

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS8692 FDMS8692 Power 56 13’’ 12mm 3000units

©2009 Fairchild Semiconductor Corporation
FDMS8692 Rev.C4

°C/W

1

www.fairchildsemi.com

FDMS8692 N-Channel PowerTrench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 30 V

Breakdown Voltage Temperature
Coefficient

= 250PA, referenced to 25°C 20 mV/°C

I

D

Zero Gate Voltage Drain Current VDS = 24V, VGS= 0V 1 PA

Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±100 nA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 1 1.8 3 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

= 250PA, referenced to 25°C -5.4 mV/°C

I

D

V

= 10V, ID = 12A 7.0 9.0

GS

= 4.5, ID = 10.5A 10.5 14.0

GS

= 10V, ID = 12A, TJ = 125°C 10.0 13.0

V

GS

Forward Transconductance VDD = 10V, ID = 12A 58 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 515 685 pF

Reverse Transfer Capacitance 85 130 pF

= 15V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz 1.0 2.8

950 1265 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

g

g

gs

gd

Turn-On Delay Time

Rise Time 310ns

Turn-Off Delay Time 19 34 ns

VDD = 15V, ID = 12A,
V

= 10V, R

GS

GEN

= 6:

918ns

Fall Time 210ns

Total Gate Charge VGS= 0V to 10V

Total Gate Charge VGS= 0V to 5V 8 11 nC

Gate to Source Charge 2.7 nC

VDD = 15V,
I

= 12A

D

15 21 nC

Gate to Drain “Miller” Charge 2.1 nC

m:V

®

MOSFET

:

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. Starting TJ = 25°C, L = 0.3mH, IAS = 22A, VDD = 30V, VGS = 10V.

©2009 Fairchild Semiconductor Corporation
FDMS8692 Rev.C

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 14 25 nC

4

V

= 0V, IS= 2.1A (Note 2) 0.7 1.2 V

GS

= 0V, IS= 12A 0.8 1.2 V

V

GS

= 12A, di/dt = 100A/Ps

I

F

a. 50°C/W when mounted on a

2

1in

pad of 2 oz copper.

2

29 47 ns

is guaranteed by design while R

TJC

b. 125°C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

TCA

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FDMS8692 N-Channel PowerTrench

Typical Characteristics T

120

100

80

60

40

, DRAIN CURRENT (A)

D

I

20

0

01234

, DRAIN TO SOURCE VOLTAGE (V)

V

DS

Figure 1.

1.8

1.6

On-Region Characteristics Figure 2.

ID = 12A
V

= 10V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE (

J

VGS = 10V

VGS = 5V

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

= 25°C unless otherwise noted

J

VGS = 4.5V

VGS = 4V

VGS = 3.5V

o

C)

3.5

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

3.0

VGS=3.5V

VGS = 4V

2.5

V

= 4.5V

GS

2.0

1.5

NORMALIZED

1.0

DRAIN TO SOURCE ON-RESISTANCE

0.5
020406080100120

I

, DRAIN CURRENT(A)

D

VGS = 5V

V

=10V

GS

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

25

ID= 12A

20

(m:)

15

, DRAIN TO

DS(on)

10

r

SOURCE ON-RESISTANCE

5

246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

TJ= 125oC

TJ= 25oC

®

MOSFET

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

vs Junction Temperature

120

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

100

V

= 5V

DD

80

60

40

, DRAIN CURRENT (A)

D

I

20

0

123456

TJ= 150oC

TJ = 25oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2009 Fairchild Semiconductor Corporation
FDMS8692 Rev.C

4

TJ = -55oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

300

V

= 0V

100

GS

10

1

TJ= 150oC

TJ = 25oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

3

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