Fairchild FDMS86520 service manual
FDMS86520
Power 56
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Pin 1
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Top
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N-Channel PowerTrench® MOSFET
60 V, 42 A, 7.4 mΩ
FDMS86520 N-Channel PowerTrench
December 2011
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 7.4 mΩ at VGS = 10 V, ID = 14 A
DS(on)
= 10.3 mΩ at VGS = 8 V, ID = 12.5 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
, fast switching speed and body
DS(on)
Applications
Primary DC-DC Switch
Motor Bridge Switch
Synchronous Rectifier
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 42
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 80
Single Pulse Avalanche Energy (Note 3) 86 mJ
Power Dissipation TC = 25 °C 69
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 74
C
= 25 °C (Note 1a) 14
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.8
Thermal Resistance, Junction to Ambient (Note 1a) 50
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86520 FDMS86520 Power 56 13 ’’ 12 mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMS86520 Rev. C
1
www.fairchildsemi.com
FDMS86520 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 60 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 48 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 30 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.5 3.6 4.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -11 mV/°C
D
V
= 10 V, ID = 14 A 6.0 7.4
GS
= 8 V, ID = 12.5 A 7.3 10.3
GS
= 10 V, ID = 14 A, TJ = 125 °C 9 11
V
GS
Forward Transconductance VDS = 10 V, ID = 14 A 49 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 624 830 pF
Reverse Transfer Capacitance 24 40 pF
= 30 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.7 Ω
2140 2850 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 6.7 14 ns
Turn-Off Delay Time 20 32 ns
= 30 V, ID = 14 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 410ns
g
g
gs
gd
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 8 V 23 33 nC
Gate to Source Charge 10.9 nC
V
DD
I
= 14 A
D
= 30 V,
Gate to Drain “Miller” Charge 5.6 nC
17 31 ns
28 40 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boar d of FR-4 ma terial . R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
of 86 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 24 A, VDD = 54 V, VGS = 10 V.
AS
©2011 Fairchild Semiconductor Corporation
FDMS86520 Rev. C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 21 35 nC
Reverse Recovery Time
Reverse Recovery Charge 40 64 nC
V
V
I
F
I
F
a) 50 °C/W when mounted on a
2
pad of 2 oz copper
1 in
= 0 V, IS = 2.1 A (Note 2) 0.74 1.2
GS
= 0 V, IS = 14 A (Note 2) 0.83 1.3
GS
= 14 A, di/dt = 100 A/μs
= 14 A, di/dt = 300 A/μs
θJC
2
37 60 ns
31 49 ns
is guaranteed by design while R
125 °C/W when mounted on a
b)
minimum pad of 2 oz copper.
V
is determined by
θCA
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FDMS86520 N-Channel PowerTrench
012345
0
20
40
60
80
VGS = 8 V
VGS = 6 V
VGS = 10 V
VGS = 6.5 V
VGS = 7 V
VGS = 5.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0 20406080
0
1
2
3
4
5
6
V
GS
= 8 V
VGS = 6.5 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
V
GS
= 6 V
VGS = 5.5 V
VGS = 7 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
ID = 14 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
5678910
0
10
20
30
40
TJ = 125 oC
ID = 14 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2345678
0
20
40
60
80
TJ = 25 oC
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0 .2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Nor mal ize d On -Re sis ta nce
vs Drain Current and Gate Voltage
®
MOSFET
Figur e 3. Norma lized On- Re sis ta nce
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMS86520 Rev. C
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gat e to
Source Voltage
Figure 6.
Sourc e to Drain D iode
Forward Voltage vs Source Current
3
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