Fairchild FDMS86500L service manual
FDMS86500L
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
G
S
S
S
D
D
D
D
5
6
7
8
3
2
1
4
N-Channel PowerTrench® MOSFET
60 V, 80 A, 2.5 mΩ
FDMS86500L N-Channel PowerTrench
September 2011
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 2.5 mΩ at VGS = 10 V, ID = 25 A
DS(on)
= 3.7 mΩ at VGS = 4.5 V, ID = 20 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
, fast switching speed and body
DS(on)
Applications
Primary Switch in isolated DC-DC
Synchronous Rectifier
Load Switch
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C (Note 4) 80
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 180
Single Pulse Avalanche Energy (Note 3) 240 mJ
Power Dissipation TC = 25 °C 104
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 158
C
= 25 °C (Note 1a) 25
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 50
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86500L FDMS86500L Power 56 13 ’’ 12 mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMS86500L Rev.C1
1
www.fairchildsemi.com
FDMS86500L N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 60 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 48 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 30 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA11.83V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -7 mV/°C
D
V
= 10 V, ID = 25 A 2.1 2.5
GS
= 4.5 V, ID = 20 A 2.9 3.7
GS
= 10 V, ID = 25 A, TJ = 125 °C 3.1 3.7
V
GS
Forward Transconductance VDS = 5 V, ID = 20 A 95 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1470 1955 pF
Reverse Transfer Capacitance 50 80 pF
= 30 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 1.1 Ω
9420 12530 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 16 28 ns
Turn-Off Delay Time 63 100 ns
= 30 V, ID = 25 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 7.8 16 ns
g
g
gs
gd
To tal Gate Charge VGS = 0 V to 10 V
To tal Gate Charge VGS = 0 V to 4.5 V 54 108 nC
Gate to Source Charge 26.6 nC
V
DD
I
= 25 A
D
= 30 V,
Gate to Drain “Miller” Charge 11.5 nC
27 43 ns
117 165 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boar d of FR-4 ma terial . R
1. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 42 67 nC
Reverse Recovery Time
Reverse Recovery Charge 84 134 nC
a) 50 °C/W when mounted on a
1 in
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of tbd mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 40 A, VDD = 54 V, VGS = 10 V.
4. Package-limited current of 80 A is based on ideal infinite heatsink condition.
©2011 Fairchild Semiconductor Corporation
FDMS86500L Rev.C1
GS
V
GS
= 25 A, di/dt = 100 A/μs
I
F
= 25 A, di/dt = 300 A/μs
I
F
2
pad of 2 oz copper
= 0 V, IS = 2.1 A (Note 2) 0.68 1.2
= 0 V, IS = 25 A (Note 2) 0.79 1.3
54 87 ns
46 73 ns
is guaranteed by design while R
θJC
125 °C/W when mounted on a
b)
minimum pad of 2 oz copper.
2
θCA
www.fairchildsemi.com
V
is determined by
FDMS86500L N-Channel PowerTrench
0.0 0.5 1.0 1.5 2.0 2.5
0
30
60
90
120
150
180
VGS = 4 V
VGS = 10 V
VGS = 3 V
VGS = 3.5 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
VDS, DRA IN T O SOURC E VOLTAGE (V)
0 30 60 90 120 150 180
0
1
2
3
4
5
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
V
GS
= 4.5 V
VGS = 4 V
VGS = 3.5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 25 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TE MPERA TU RE (
o
C)
246810
0
2
4
6
8
10
TJ = 125 oC
ID = 25 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
12345
0
30
60
90
120
150
180
TJ = 25 oC
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
1000
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Norma l i z e d O n - Resistanc e
vs Drain Current and Gate Voltage
®
MOSFET
Fig u r e 3. Nor m a lized O n - Resis t a nce
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMS86500L Rev.C1
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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