Fairchild FDMS86500DC service manual
FDMS86500DC
Bottom
Top
Pin 1
S
G
S
S
D
D
D
D
Power 56
S
Pin 1
D
D
D
D
S
S
S
G
N-Channel Dual CoolTM Power Trench® MOSFET
60 V, 60 A, 2.3 mΩ
Features
Dual CoolTM Top Side Cooling PQFN package
Max r
Max r
High performance technology for extremely low r
100% UIL Tested
RoHS Compliant
= 2.3 mΩ at VGS = 10 V, ID = 29 A
DS(on)
= 3.3 mΩ at VGS = 8 V, ID = 24 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
December 2011
®
process.
TM
package
DS(on)
FDMS86500DC N-Channel Dual Cool
TM
Power Trench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJC
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C
Drain to Source Voltage 60 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 60
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 317 mJ
Power Dissipation TC = 25 °C 125
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case (Top Source) 2.8
Thermal Resistance, Junction to Case (Bottom Drain) 1.0
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11
86500 FDMS86500DC Dual Cool
= 25 °C unless otherwise noted
A
= 25 °C 177
C
= 25 °C (Note 1a) 29
A
= 25 °C (Note 1a) 3.2
A
TM
Power 56 13’’ 12 mm 3000 units
1
A
W
°C/W
www.fairchildsemi.com
FDMS86500DC N-Channel Dual Cool
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 60 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 48 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25°C 30 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.5 3.7 4.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -12 mV/°C
D
V
= 10 V, ID = 29 A 1.9 2.3
GS
= 8 V, ID = 24 A 2.4 3.3
GS
= 10 V, ID = 29 A, TJ = 125 °C 3.0 3.7
V
GS
Forward Transconductance VDS = 10 V, ID = 29 A 98 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1605 2680 pF
Reverse Transfer Capacitance 48 95 pF
= 30 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 1.0 Ω
5775 7680 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 25 40 ns
Turn-Off Delay Time 34 54 ns
= 30 V , ID = 29 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 8.2 17 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 31 nC
= 0 V to 8 V 62 87 nC
GS
V
DD
I
= 29 A
D
= 30 V
Gate to Drain “Miller” Charge 15 nC
35 56 ns
76 107 nC
mΩV
TM
Power Trench
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 46 74 nC
V
= 0 V, IS = 2.7 A (Note 2) 0.71 1.2
GS
= 0 V, IS = 29 A (Note 2) 0.79 1.3
V
GS
= 29 A, di/dt = 100 A/μs
I
F
2
59 95 ns
V
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Thermal Characteristics
FDMS86500DC N-Channel Dual Cool
R
θJC
R
θJC
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
NOTES:
1. R
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
θJA
by the user's board design.
Thermal Resistance, Junction to Case (Top Source) 2.8
Thermal Resistance, Junction to Case (Bottom Drain) 1.0
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1c) 27
Thermal Resistance, Junction to Ambient (Note 1d) 34
Thermal Resistance, Junction to Ambient (Note 1e) 16
Thermal Resistance, Junction to Ambient (Note 1f) 19
Thermal Resistance, Junction to Ambient (Note 1g) 26
Thermal Resistance, Junction to Ambient (Note 1h) 61
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11
Thermal Resistance, Junction to Ambient (Note 1l) 13
a. 38 °C/W when mounted on
2
a 1 in
pad of 2 oz copper
is guaranteed by design while R
θJC
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
is determined
θCA
°C/W
TM
Power Trench
®
MOSFET
SF
DF
DS
G
SS
SF
DS
DF
G
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sin k , 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminu m He at Si nk, mi n imu m pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 oC; N-ch: L = 0.3 mH, IAS = 46 A, VDD = 54 V, VGS = 10 V.
2
pad of 2 oz copper
SS
©2011 Fairchild Semiconductor Corporation
FDMS86500DC Rev. C
3
www.fairchildsemi.com
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