Fairchild FDMS86322 service manual

FDMS86322

G

S

Pin 1

Bottom

Top

Power 56

N-Channel PowerTrench® MOSFET

80 V, 60 A, 7.65 m:

FDMS86322 N-Channel PowerTrench

October 2010

Features

 Max r

 Advanced Package and Silicon combination for low r

and high efficiency

 MSL1 robust package design

 100% UIL tested

 RoHS Compliant

= 7.65 m: at VGS = 10 V, ID = 13 A

DS(on)

= 12 m: at VGS = 6 V, ID = 7.2 A

DS(on)

D

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

®

process thant has

Application

 DC-DC Conversion

D

5

D

6

D

7

8

D

G

4

S

3

S

2

S

1

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 80 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25 °C 60

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200

Single Pulse Avalanche Energy (Note 3) 135 mJ

Power Dissipation TC = 25 °C 104

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

A

Thermal Characteristics

R

TJC

R

TJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86322 FDMS86322 Power 56 13 ’’ 12 mm 3000 units

Thermal Resistance, Junction to Case 1.2

Thermal Resistance, Junction to Ambient (Note 1a) 50

= 25 °C unless otherwise noted

= 25 °C 83

C

= 25 °C (Note 1a) 13

A

= 25 °C (Note 1a) 2.5

A

1

A

W

°C/W

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FDMS86322 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV 'T

I

DSS

I

GSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 80 V

Breakdown Voltage Temperature Coefficient

I

= 250 PA, referenced to 25 °C 66 mV/°C

D

Zero Gate Voltage Drain Current VDS = 64 V, VGS= 0 V 800 nA

Gate to Source Leakage Current, Forward VGS = ±20 V, VDS= 0 V 100 nA

On Characteristics

V

GS(th)

'V 'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 2.0 2.9 4.0 V

Gate to Source Threshold Voltage Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 PA, referenced to 25 °C -9 mV/°C

D

V

= 10 V, ID = 13 A 6.1 7.65

GS

= 6 V, ID = 7.2 A 8.2 12

GS

= 10 V, ID = 13 A, TJ= 125 °C 10.7 14

V

GS

Forward Transconductance VDS = 10 V, ID = 13 A 45 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 460 610 pF

Reverse Transfer Capacitance 30 45 pF

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 1.0 :

2255 3000 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Turn-On Delay Time

Rise Time 11 20 ns

Turn-Off Delay Time 27 44 ns

= 50 V, ID = 13 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 :

Fall Time 713ns

g

gs

gd

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 5 V 22 31 nC

Gate to Source Charge 9.5 nC

V

DD

I

= 13 A

D

= 50 V,

Gate to Drain “Miller” Charge 10.8 nC

15 27 ns

39 55 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.

3. Starting T

FDMS86322 RevC

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 61 98 nC

= 25 °C, L = 0.3 mH, IAS = 30 A, VDD = 75 V, VGS = 10 V

J

V

= 0 V, IS= 2.1 A (Note 2) 0.7 1.2

GS

= 0 V, IS= 13 A (Note 2) 0.8 1.3

V

GS

= 13 A, di/dt = 100 A/Ps

I

F

a. 50 °C/W when mounted on a

2

1 in

pad of 2 oz copper.

V

56 90 ns

is guaranteed by design while R

TJC

b. 125 °C/W when mounted on a minimum pad of 2 oz copper.

2

is determined by

TCA

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FDMS86322 N-Channel PowerTrench

012345

0

50

100

150

200

VGS = 6 V

VGS = 10 V

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

VGS = 4.5 V

VGS = 5 V

VGS = 5.5 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 50 100 150 200

0

1

2

3

4

5

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 13 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

46810

0

10

20

30

40

:

12345678

0

50

100

150

200

VDS= 5 V

PULSE DURATION = 80 Ps DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

TJ= 150 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ= 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

VGS = 4.5 V

V

=5 V

GS

VGS = 5.5 V

NORMALIZED

PULSE DURATION = 80 Ps

DRAIN TO SOURCE ON-RESISTANCE

DUTY CYCLE = 0.5% MAX

I

, DRAIN CURRENT (A)

D

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

)

(m

ID= 13 A

PULSE DURATION = 80Ps DUTY CYCLE = 0.5% MAX

V

=6 V

GS

V

= 10 V

GS

®

MOSFET

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

vs Junction Temperature

FDMS86322 RevC

Figure 5. Transfer Characteristics

DRAIN TO

,

DS(on)

r

SOURCE ON-RESISTANCE

Figure 4.

V

, GATE TO SOURCE VOLTAGE (V)

GS

O n - R es i s t a n c e vs G a t e t o

TJ= 125 oC

TJ= 25 oC

Source Voltage

Figure 6.

S o u r ce t o D r a i n Di o d e

Forward Voltage vs Source Current

3

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