Fairchild FDMS86310 service manual
FDMS86310
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
Pin 1
D
D
D
D
S
S
S
G
N-Channel PowerTrench® MOSFET
80 V, 50 A, 4.8 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 4.8 mΩ at VGS = 10 V, ID = 17 A
DS(on)
= 6.7 mΩ at VGS = 8 V, ID = 14 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
Primary Switch
Synchronous Rectifier
Motor Switch
January 2012
, fast switching speed and body
DS(on)
FDMS86310 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS86310 FDMS86310 Power 56 13 ’’ 12 mm 3000 units
©2012 Fairchild Semiconductor Corporation
FDMS86310 Rev. C
Drain to Source Voltage 80 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 50
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 183 mJ
Power Dissipation TC = 25 °C 96
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case 1.3
Thermal Resistance, Junction to Ambient (Note 1a) 50
= 25 °C unless otherwise noted
A
= 25 °C 105
C
= 25 °C (Note 1a) 17
A
= 25 °C (Note 1a) 2.5
A
1
A
W
°C/W
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FDMS86310 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 80 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 64 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 45 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.4 3.3 4.5 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -11 mV/°C
D
V
= 10 V, ID = 17 A 3.8 4.8
GS
= 8 V, ID = 14 A 4.5 6.7
GS
= 10 V, ID = 17 A, TJ = 125 °C 5.7 7.2
V
GS
Forward Transconductance VDS = 10 V, ID = 17 A 49 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 693 925 pF
Reverse Transfer Capacitance 19 45 pF
Gate Resistance 1.3 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 23 37 ns
Turn-Off Delay Time 35 56 ns
Fall Time 918ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 8 V 55 78 nC
Gate to Source Charge 24 nC
Gate to Drain “Miller” Charge 14 nC
= 40 V, VGS = 0 V,
V
DS
f = 1 MHz
= 40 V, ID = 17 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
V
DD
I
= 17 A
D
= 40 V,
4730 6290 pF
28 45 ns
66 95 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 35 A, VDD = 72 V, VGS = 10 V.
©2012 Fairchild Semiconductor Corporation
FDMS86310 Rev. C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 41 65 nC
Reverse Recovery Time
Reverse Recovery Charge 87 140 nC
a)
SF
SS
DF
DS
G
V
GS
V
GS
= 17 A, di/dt = 100 A/μs
I
F
= 17 A, di/dt = 300 A/μs
I
F
50 °C/W when mounted on a
2
1 in
pa d of 2 oz cop per
= 0 V, IS = 2.1 A (Note 2) 0.72 1.2
= 0 V, IS = 17 A (Note 2) 0.81 1.3
51 80 ns
43 69 ns
is guaranteed by design while R
θJC
125 °C/W when mounted on a
b)
minimum pad of 2 oz copper.
SS
SF
DS
DF
G
2
θCA
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V
is determined by
FDMS86310 N-Channel PowerTrench
012345
0
20
40
60
80
100
VGS = 5.5 V
VGS = 6 V
VGS = 10 V
VGS = 8 V
VGS = 7 V
VGS = 6.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
VDS, DRA IN T O SOURC E VOLTAGE (V)
020406080100
0
1
2
3
4
5
6
VGS = 8 V
VGS = 7 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
V
GS
= 5.5 V
VGS = 6 V
VGS = 6.5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID = 17 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
5678910
0
3
6
9
12
15
18
TJ = 125 oC
ID = 17 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
2345678
0
20
40
60
80
100
TJ = 25 oC
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Norma l i z e d O n - Resistance
vs Drain Current and Gate Voltage
®
MOSFET
Figu r e 3. Nor m a lized O n - Resist a n ce
vs Junction Temperature
©2012 Fairchild Semiconductor Corporation
FDMS86310 Rev. C
Figure 5. Transfer Characteristics
Figure 4.
On-Resistanc e vs Gate to
Source Voltage
Figure 6.
Source to Dr ai n Diode
Forward Voltage vs Source Current
3
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