Fairchild FDMS86252 service manual

FDMS86252

Power 56

D

D

D

D

G

S

S

S

Pin 1

Bottom

Top

G

S

S

S

D

D

D

D

5

6

7

8

3

2
1

4

and

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Application

 DC-DC Conversion

N-Channel PowerTrench® MOSFET

150 V, 16 A, 51 mΩ
Features

 Max r
 Max r
 Advanced package and silicon combination for low r

high efficiency

 MSL1 robust package design
 100% UIL tested
 RoHS Compliant

= 51 mΩ at VGS = 10 V, ID = 4.6 A

DS(on)

= 70 mΩ at VGS = 6 V, ID = 3.9 A

DS(on)

DS(on)

August 2010

®

process that has

FDMS86252 N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 16

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 20
Single Pulse Avalanche Energy (Note 3) 50 mJ
Power Dissipation TC = 25 °C 69
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 24

C

= 25 °C (Note 1a) 4.6

A

= 25 °C (Note 1a) 2.5

A

A

W

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86252 FDMS86252 Power 56 13 ’’ 12

©2010 Fairchild Semiconductor Corporation
FDMS86252 Rev.C

Thermal Resistance, Junction to Case 1.8
Thermal Resistance, Junction to Ambient (Note 1a) 50

1

mm 3000 units

°C/W

www.fairchildsemi.com

FDMS86252 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current V

= 250 μA, VGS = 0 V 150 V

D

I

= 250 μA, referenced to 25 °C 106 mV/°C

D

= 120 V, V

DS

= ±20 V, V

GS

= 0 V1μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

I

= 250 μA, referenced to 25 °C -9 mV/°C

D

= 10 V, ID = 4.6 A 43.9 51

V

GS

V

= 6 V, ID = 3.9 A 50.5 70

GS

= 10 V, ID = 4.6 A,

V

GS

T

= 125 °C

J

= 10 V, ID = 4.6 A15S

DS

= 250 μA 2.0 2.8 4.0 V

D

83 96

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 74 115 pF
Reverse Transfer Capacitance 4.3 10 pF

= 75 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 0.4 Ω

678 905 pF

mΩ

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 2.3 10 ns
Turn-Off Delay Time 15 27 ns
Fall Time 3.2 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 2.8 nC
Gate to Drain “Miller” Charge 2.4 nC

= 75 V, ID = 4.6 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 5 V6.18.6nC

GS

GEN

Drain-Source Diode Characteristics

V

= 0 V, IS = 2 A (Note 2) 0.75 1.2

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the devi ce m ount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

Source-Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 61 98 nC

a. 50 °C/W when mounted on a

2

1 in

pad of 2 oz copper.

GS

= 0 V, IS = 4.6 A (Note 2) 0.80 1.3

V

GS

= 4.6 A, di/dt = 100 A/μs

I

F

= 6 Ω

V

DD

I

= 4.6 A

D

= 75 V,

θJC

7.7 16 ns

11 15 nC

56 90 ns

is guaranteed by design while R

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

θCA

V

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C, L = 1 mH, IAS = 10 A, VDD = 135 V, VGS = 10 V.

©2010 Fairchild Semiconductor Corporation
FDMS86252 Rev.C

2

www.fairchildsemi.com

FDMS86252 N-Channel PowerTrench

012345

0

5

10

15

20

VGS = 4.5 V

VGS = 5.5 V

VGS = 6 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 5 V

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 5 10 15 20

0

1

2

3

4

5

VGS = 6 V

VGS = 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 5.5 V

VGS = 4.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

ID = 4.6 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

45678910

0

50

100

150

200

TJ = 125 oC

ID = 4.6 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOL TAG E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

23456

0

5

10

15

20

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

20

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norm a l i z e d O n -Resistan c e

vs Drain Current and Gate Voltage

®

MOSFET

Fi g ure 3 . Nor m aliz e d On R esis t ance

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDMS86252 Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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