Fairchild FDMS86250 service manual

FDMS86250

Power 56

D

G

S

Pin 1

Bottom

Top

D

S

G

N-Channel PowerTrench® MOSFET

150 V, 20 A, 25 mΩ

FDMS86250 N-Channel PowerTrench

December 2011

Features

 Max r  Max r  Advanced package and silicon combination for low r

high efficiency

 MSL1 robust package design  100% UIL tested  RoHS Compliant

= 25 mΩ at VGS = 10 V, ID = 6.7 A

DS(on)

= 33 mΩ at VGS = 6 V, ID = 5.8 A

DS(on)

and

General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

®

process that has

Application

 DC-DC Conversion

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 150 V Gate to Source Voltage ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 20

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 50 Single Pulse Avalanche Energy (Note 3) 180 mJ Power Dissipation TC = 25 °C 96 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 42

C

= 25 °C (Note 1a) 6.7

A

= 25 °C (Note 1a) 2.5

A

W

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86250 FDMS86250 Power 56 13 ’’ 12

Thermal Resistance, Junction to Case 1.3 Thermal Resistance, Junction to Ambient (Note 1a) 50

1

mm 3000 units

°C/W

www.fairchildsemi.com

FDMS86250 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV ΔT

I

DSS

I

GSS

DSS

DSS J

Drain to Source Breakdown Voltage I Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current V Gate to Source Leakage Current V

= 250 μA, VGS = 0 V150 V

D

I

= 250 μA, referenced to 25 °C 106 mV/°C

D

= 120 V, V

DS

= ±20 V, V

GS

= 0 V1μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, I Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance V

I

= 250 μA, referenced to 25 °C -11 mV/°C

D

V

= 10 V, ID = 6.7 A 19 25

GS

= 6 V, ID = 5.8 A2333

GS

= 10 V, ID = 6.7 A, T

V

GS

= 10 V, ID = 6.7 A24S

DS

= 250 μA 2.0 2.9 4.0 V

D

= 125 °C 35 46

J

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance Output Capacitance 165 220 pF Reverse Transfer Capacitance 8.8 15 pF Gate Resistance 0.5 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 4.3 10 ns Turn-Off Delay Time 22 35 ns Fall Time 4.2 10 ns To tal Gate Charge V To tal Gate Charge V Gate to Source Charge 7.4 nC Gate to Drain “Miller” Charge 5.5 nC

= 75 V, VGS = 0 V,

V

DS

f = 1 MHz

= 75 V, ID = 6.7 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 5 V1420nC

GS

GEN

= 6 Ω

V

DD

I

D

= 75 V,

= 6.7 A

1750 2330 pF

14 25 ns

25 36 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C, L = 1 mH, IAS = 19 A, VDD = 135 V, VGS = 10 V.

Source-Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 112 180 nC

SF

SS

DS

DF

G

V

GS

V

GS

= 6.7 A, di/dt = 100 A/μs

I

F

a. 50 °C/W when mounted on a

2

1 in

pad of 2 oz copper.

= 0 V, IS = 2 A (Note 2) 0.72 1.2 = 0 V, IS = 6.7 A (Note 2) 0.78 1.3

73 117 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a minimum pad of 2 oz copper.

SS

SF

DS

DF

G

2

θCA

www.fairchildsemi.com

V

is determined by

FDMS86250 N-Channel PowerTrench

012345

0

10

20

30

40

50

VGS = 5 V

VGS = 10 V

VGS = 5.5 V

VGS = 6 V

VGS = 4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

0 1020304050

0

1

2

3

4

VGS = 4.5 V

PULSE DURA TION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 5 V

VGS = 5.5 V

VGS = 6 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

ID = 6.7 A V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TE MPERA TURE (

o

C)

45678910

0

20

40

60

80

TJ = 125 oC

ID = 6.7 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

23456

0

10

20

30

40

50

TJ = 25 oC

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μ s DUTY CYCLE = 0.5% MAX

TJ = -55 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor ma liz ed O n-Res ist anc e

vs Drain Current and Gate Voltage

®

MOSFET

Figur e 3 . Norm alize d O n- Res is tance

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

www.fairchildsemi.com