Fairchild FDMS8622 service manual

FDMS8622

Power 56

D

D

D

D

G

S

S

S

Pin 1

Bottom

Top

G

S

S

S

D

D

D

D

5

6

7

8

3

2
1

4

N-Channel Power Trench® MOSFET

100 V, 16.5 A, 56 mΩ
Features

 Max r
 Max r
 High performance trench technology for extremely low r
 High power and current handling capability in a widely used

surface mount package

 100% UIL Tested
 Termination is Lead-free and RoHS Compliant

= 56 mΩ at VGS = 10 V, ID = 4.8 A

DS(on)

= 88 mΩ at VGS = 6 V, ID = 3.9 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been optimized for
ruggedness.

Applications

 POE Protection Switch
 DC-DC Switch

July 2011

®

r

, switching performance and

DS(on)

process that has

FDMS8622 N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 16.5

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 12 mJ
Power Dissipation TC = 25 °C 31
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 17

C

= 25 °C (Note 1a) 4.8

A

= 25 °C (Note 1a) 2.5

A

A

W

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case (Note 1) 4
Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS8622 FDMS8622 Power56 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation
FDMS8622 Rev.C

1

www.fairchildsemi.com

FDMS8622 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 69 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA234V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -8 mV/°C

D

V

= 10 V, ID = 4.8 A 45 56

GS

= 6 V, ID = 3.9 A 62 88

GS

= 10 V , ID = 4.8 A, TJ = 125 °C 78 97

V

GS

Forward Transconductance VDD = 5 V, ID = 4.8 A 9 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 70 95 pF
Reverse Transfer Capacitance 3.6 5 pF
Gate Resistance 1.0 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

g(TOT)

Q

g(TOT)

Q

gs

Q

gd

Turn-On Delay Time
Rise Time 1.7 10 ns
Turn-Off Delay Time 10.2 18 ns
Fall Time 2.1 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 1.4 2.8 nC
Gate to Drain “Miller” Charge 1.3 2.6 nC

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

= 50 V, ID = 4.8 A,

V

DD

V

= 10 V, R

GS

= 0 V to 10 V

GS

= 0 V to 5 V 2.8 4 nC

GS

GEN

= 6 Ω

V

DD

I

D

= 50 V,

= 4.8 A

301 400 pF

5.7 11 ns

57nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 ma terial. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3.Starting TJ = 25 °C; N-ch: L = 0.1 mH, IAS = 16 A, VDD = 90 V, VGS = 10 V.

FDMS8622 Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 30 48 nC

a)

50 °C/W when mounted on a
1 in2 pad of 2 oz copper

V

= 0 V, IS = 4.8 A (Note 2) 0.8 1.3

GS

= 0 V, IS = 1.9 A (Note 2) 0.8 1.2

V

GS

= 4.8 A, di/dt = 100 A/μs

I

F

2

θJC

b)

125 °C/W when mounted on a
minimum pad of 2 oz copper.

38 60 ns

is guaranteed by design while R

V

is determined by

θCA

www.fairchildsemi.com

FDMS8622 N-Channel PowerTrench

0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

0

5

10

15

20

25

30

VGS = 8 V

VGS = 7 V

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

I

D

, DRAIN CURRENT (A)

VGS = 6 V

VGS = 5 V

VGS = 10 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

0 5 10 15 20 25 30 35

0

1

2

3

4

VGS = 10 V

VGS = 5 V

VGS = 6 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 7 V

VGS = 8 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 4.8 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANC E

T

J

, JUNCTION TEMPERATURE (

o

C)

46810

0

50

100

150

200

250

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = 125 oC

T

J

= 25

o

C

ID = 4.8 A

r

DS(on)

, DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

VGS, GATE TO SOURCE VOLTAGE (V )

23456789

0

5

10

15

20

25

30

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURC E V OLTAGE (V)

0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

®

MOSFET

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

Fig ure 3. Norm a lized On Re s ista n ce

vs Junction Temperature

FDMS8622 Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

3

Forward Voltage vs Source Current

Source to Drain Diode

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