Fairchild FDMS86201 service manual

Preliminary Datasheet

FDMS86201

N-Channel PowerTrench® MOSFET

120 V, 35 A, 11.5 m:
Features

 Max r

 Max r

 Advanced Package and Silicon combination for low r

and high efficiency

 MSL1 robust package design

 100% UIL tested

 RoHS Compliant

= 11.5 m: at VGS = 10 V, ID = 11.6 A

DS(on)

= 14.5 m: at VGS = 6 V, ID = 10.7 A

DS(on)

DS(on)

April 2010

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

®

process that has

Application

 DC-DC Conversion

FDMS86201 N-Channel PowerTrench

®

MOSFET

Top

D

Power 56

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 120 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25 °C 35

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 160

Single Pulse Avalanche Energy (Note 3) 264 mJ

Power Dissipation TC = 25 °C 104

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

Bottom

D

D

D

Pin 1

S

S

S

G

= 25 °C 65

C

= 25 °C (Note 1a) 11.6

A

= 25 °C (Note 1a) 2.5

A

D

5

D

6

D

7

8

D

4

3

2

1

Thermal Characteristics

G

S

S

S

A

W

R

TJC

R

TJA

Thermal Resistance, Junction to Case 1.2

Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86201 FDMS86201 Power 56 13 ’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation
FDMS86201 Rev.C

°C/W

1

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Preliminary Datasheet

FDMS86201 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 PA, VGS = 0 V 120 V

Breakdown Voltage Temperature
Coefficient

I

= 250 PA, referenced to 25 °C 95 mV/°C

D

Zero Gate Voltage Drain Current VDS = 96 V, VGS= 0 V 1 PA

Gate to Source Leakage Current, Forward VGS = ±20 V, VDS= 0 V 100 nA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 PA 2.0 2.6 4.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

= 250 PA, referenced to 25 °C -10 mV/°C

I

D

V

= 10 V, ID = 11.6 A 9.6 11.5

GS

= 6 V, ID = 10.7 A 11.8 14.5

GS

= 10 V, ID = 11.6 A, TJ= 125 °C 15.7 21.5

V

GS

Forward Transconductance VDS = 10 V, ID = 11.6 A 39 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 322 430 pF

Reverse Transfer Capacitance 15 25 pF

V

= 60 V, VGS = 0 V,

DS

f = 1 MHz

2056 2735 pF

Gate Resistance 1.2 :

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

Turn-On Delay Time

Rise Time 7.7 16 ns

Turn-Off Delay Time 27 44 ns

= 60 V, ID = 11.6 A,

V

DD

= 10 V, R

V

GS

GEN

= 6 :

Fall Time 7.1 15 ns

g

g

gs

gd

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 5 V 18 26 nC

Gate to Source Charge 8.1 nC

= 60 V,

V

DD

= 11.6 A

I

D

Gate to Drain “Miller” Charge 7.1 nC

13 24 ns

32 46 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.

3. Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 23 A, VDD = 120 V, VGS = 10 V.

FDMS86201 Rev. CB

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 88 140 nC

a)

50 °C/W when mounted on
a 1 in2p ad o f 2 o z co p p er

V

= 0 V, IS= 2 A (Note 2) 0.69 1.2

GS

= 0 V, IS= 11.6 A (Note 2) 0.78 1.3

V

GS

= 11.6 A, di/dt = 100 A/Ps

I

F

2

TJC

b)

66 106 ns

is guaranteed by design while R

125 °C/W when mounted on
a minimum pad of 2 oz
copper.

V

is determined by

TCA

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Preliminary Datasheet

:

FDMS86201 N-Channel PowerTrench

Typical Characteristics T

160

VGS = 10 V

120

80

DRAIN CURRENT (A)

,

40

D

I

0

012345

V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

Figure 1.

On Region Characteristics Figure 2.

2.2

ID = 11.6 A

2.0

= 10 V

V

GS

1.8

1.6

1.4

1.2

NORMALIZED

1.0

0.8

0.6

DRAIN TO SOURCE ON-RESISTANCE

0.4

-75 -50 -25 0 25 50 75 100 125 150

T

, JUNCTION TEMPERATURE

J

VGS = 6 V

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

= 25 °C unless otherwise noted

J

VGS = 5.5 V

VGS = 5 V

VGS = 4.5 V

o

(

C

)

3.0

2.5

V

= 4.5 V

GS

VGS = 5 V

VGS = 5.5 V

2.0

1.5

NORMALIZED

1.0

PULSE DURATION = 80 Ps

DRAIN TO SOURCE ON-RESISTANCE

0.5

DUTY CYCLE = 0.5% MAX

0 40 80 120 160

I

,

DRAIN CURRENT (A)

D

VGS = 6 V

VGS= 10 V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

40

)

m

(

30

20

DRAIN TO

,

DS(on)

r

10

SOURCE ON-RESISTANCE

0

246810

V

, GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

ID= 11.6 A

TJ= 125 oC

TJ= 25 oC

®

MOSFET

F i g u r e 3 . N o r m a l i z e d O n R e s i s t a n c e

160

120

80

, DRAIN CURRENT (A)

40

D

I

0

1234567

Figure 5. Transfer Characteristics

FDMS86201 Rev. CB

vs Junction Temperature

PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX

VDS= 5 V

TJ = 150 oC

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = 25 oC

TJ = -55 oC

Figure 4.

O n - R es i s t a n c e vs G a t e t o

Source Voltage

200
100

V

= 0 V

GS

10

TJ= 150 oC

1

TJ = 25 oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DI ODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55 oC

Forward Voltage vs Source Current

3

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