Fairchild FDMS86200 service manual

FDMS86200

G

S

S

S

D

D

D

D

5

6

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8

3

2
1

4

Power 56

D

D

D

D

G

S

S

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Pin 1

Bottom

Top

N-Channel Power Trench® MOSFET

150 V, 49 A, 18 mΩ

Features

 Max r
 Max r
 Advanced Package and Silicon combination for low r

and high efficiency

 MSL1 robust package design
 100% UIL tested
 RoHS Compliant

= 18 mΩ at VGS = 10 V, ID = 9.6 A

DS(on)

= 21 mΩ at VGS = 6 V, ID = 8.8 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Application

 DC-DC Conversion

May 2012

®

process that has

FDMS86200 N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 150 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 220 mJ
Power Dissipation TC = 25 °C 104
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 52

C

= 25 °C (Note 1a) 9.6

A

= 25 °C (Note 1a) 2.5

A

A

W

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86200 FDMS86200 Power 56 13 ’’ 12 mm 3000 units

©2012 Fairchild Semiconductor Corporation
FDMS86200 Rev.C2

Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 50

1

°C/W

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FDMS86200 N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

DSS

ΔBV

DSS

ΔT

J

I

DSS

I

GSS

On Characteristics

V

GS(th)

ΔV

GS(th)

ΔT

J

r

DS(on)

g

FS

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 150 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 120 V, V
Gate to Source Leakage Current VGS = ±20 V, V

= 250 μA, referenced to 25 °C 110 mV/°C

I

D

= 0 V 1 μA

GS

= 0 V 100 nA

DS

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 2.5 4.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

Forward Transconductance VDD = 10 V, ID = 9.6 A 33 S

I

= 250 μA, referenced to 25 °C -10 mV/°C

D

V

= 10 V, ID = 9.6 A 15 18

GS

= 6 V, ID = 8.8 A 17 21

GS

= 10 V, ID = 9.6 A, TJ = 125 °C 28 34

V

GS

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 203 270 pF
Reverse Transfer Capacitance 10 16 pF

= 75 V, VGS = 0 V,

V

DS

f = 1 MHz

2041 2715 pF

Gate Resistance 1.2 3 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q

Q

g(TOT)

gs
gd

Turn-On Delay Time
Rise Time 7.9 16 ns
Turn-Off Delay Time 27 44 ns

= 75 V, ID = 9.6 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 5.8 12 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 7.9 nC

= 0 V to 5 V 18 26 nC

GS

V

DD

I

= 9.6 A

D

= 75 V

Gate to Drain “Miller” Charge 7.7 nC

13 23 ns

33 46 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

is determined with the devi ce mount ed on a 1 i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.

3. E

of 220 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 21 A, VDD = 150 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 46 A.

AS

FDMS86200 Rev.C2

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 113 181 nC

a. 50 °C/W when mounted on
a 1 in

2

pad of 2 oz copper

V

= 0 V, IS = 2 A (Note 2) 0.69 1.2

GS

= 0 V, IS = 9.6 A (Note 2) 0.77 1.3

V

GS

= 9.6 A, di/dt = 100 A/μs

I

F

2

θJC

b.125 °C/W when mounted on
a minimum pad of 2 oz copper

76

is guaranteed by design while R

V

120 ns

is determined by

θCA

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FDMS86200 N-Channel Power Trench

012345

0

20

40

60

80

100

VGS = 4.5 V

VGS = 10 V

VGS = 5 V

VGS = 4 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 6 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 20406080100

0

1

2

3

4

VGS = 4 V

VGS = 6 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

VGS = 10 V

VGS = 5 V

VGS = 4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

-75 -50 -25 0 25 50 75 100 125 150

0.4

0.8

1.2

1.6

2.0

2.4

ID = 9.6 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATU RE (

o

C)

246810

10

20

30

40

50

TJ = 125 oC

ID = 9.6 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VO L T AGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

23456

0

20

40

60

80

100

TJ = 150 oC

V

DS

= 5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURC E VO LTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor ma liz ed O n-R esi sta nc e

vs Drain Current and Gate Voltage

®

MOSFET

Fi gur e 3 . No rm alize d On- R es ist an ce

vs Junction Temperature

FDMS86200 Rev.C2

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

3

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