Fairchild FDMS86104 service manual

G

S

S

S

D

D

D

D

5

6

7

8

3

2
1

4

Bottom

Power 56

Top

Pin 1

G

S

S

S

D

D

D

D

FDMS86104

N-Channel PowerTrench® MOSFET

100 V, 16 A, 24 mΩ

FDMS86104 N-Channel PowerTrench

July 2010

Features

 Max r
 Max r
 Advanced Package and Silicon combination for low r

and high efficiency

 MSL1 robust package design
 100% UIL tested
 RoHS Compliant

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

= 24 mΩ at VGS = 10 V, ID = 7 A

DS(on)

= 39 mΩ at VGS = 6 V, ID = 5.5 A

DS(on)

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 16

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 30
Single Pulse Avalanche Energy (Note 3) 96 mJ
Power Dissipation TC = 25 °C 73
Power Dissipation T

STG

Operating and Storage Junction Temperature Range -55 to +150 °C

DS(on)

= 25 °C unless otherwise noted

A

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

®

process thant has

Application

 DC-DC Conversion

= 25 °C 39

C

= 25 °C (Note 1a) 7

A

= 25 °C (Note 1a) 2.5

A

Thermal Characteristics

®

MOSFET

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.7
Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86104 FDMS86104 Power 56 13 ’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation
FDMS86104 Rev. C

1

www.fairchildsemi.com

FDMS86104 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 66 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA22.94V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -10 mV/°C

D

V

= 10 V, ID = 7 A 20 24

GS

= 6 V, ID = 5.5 A 27 39

GS

= 10 V, ID = 7 A, TJ = 125 °C 33 40

V

GS

Forward Transconductance VDS = 10 V, ID = 7 A 18 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 178 237 pF
Reverse Transfer Capacitance 8 13 pF
Gate Resistance 0.5 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 3.5 10 ns
Turn-Off Delay Time 14.3 26 ns
Fall Time 3.2 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 5 V 6.7 9
Gate to Source Charge 3.2 nC
Gate to Drain “Miller” Charge 3 nC

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

= 50 V, ID = 7 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

V

DD

I

= 7 A

D

= 50 V,

694 923 pF

816ns

11.7 16 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C, L = 3 mH, IAS = 8 A, VDD = 100 V, VGS = 10 V

©2010 Fairchild Semiconductor Corporation
FDMS86104 Rev. C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 41 65 nC

V

GS

V

GS

= 7 A, di/dt = 100 A/μs

I

F

a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.

= 0 V, IS = 2 A (Note 2) 0.7 1.2
= 0 V, IS = 7 A (Note 2) 0.8 1.3

44 70 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

2

θCA

www.fairchildsemi.com

V

is determined by

012345

0

6

12

18

24

30

VGS = 6.5 V

VGS = 10 V

VGS = 4.5 V

VGS = 5 V

VGS = 8 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

0 6 12 18 24 30

0

1

2

3

4

5

VGS = 4.5 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 6.5 V

VGS = 8 V

VGS = 5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 7 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TE MPERATURE (

o

C)

45678910

0.00

0.05

0.10

0.15

0.20

TJ = 125 oC

ID = 7 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA G E (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

23456

0

6

12

18

24

30

TJ = 25 oC

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

40

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

FDMS86104 N-Channel PowerTrench

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistance

vs Drain Current and Gate Voltage

®

MOSFET

Figu r e 3. Norm a l ized On - R esista n c e

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDMS86104 Rev. C

Figure 5. Transfer Characteristics

Figure 4.

On-Resis tance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

www.fairchildsemi.com