Fairchild FDMS86103L service manual

FDMS86103L

G

S

S

S

D

D

D

D

5

6

7

8

3

2
1

4

Bottom

Power 56

Top

Pin 1

G

S

S

S

D

D

D

D

N-Channel PowerTrench® MOSFET

100 V, 49 A, 8 mΩ
Features

 Max r
 Max r
 Advanced Package and Silicon combination for low r

and high efficiency

 MSL1 robust package design
 100% UIL tested
 RoHS Compliant

= 8 mΩ at VGS = 10 V, ID = 12 A

DS(on)

= 11 mΩ at VGS = 4.5 V, ID = 10 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

Application

 DC-DC Conversion

December 2010

®

process thant has

FDMS86103L N-Channel Power Trench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 312 mJ
Power Dissipation TC = 25 °C 104
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 81

C

= 25 °C (Note 1a) 12

A

= 25 °C (Note 1a) 2.5

A

A

W

Thermal Characteristics

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86103L FDMS86103L Power 56 13 ’’ 12 mm 3000 units

©2010 Fairchild Semiconductor Corporation
FDMS86103L Rev.C

1

www.fairchildsemi.com

FDMS86103L N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 68 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.9 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -7 mV/°C

D

V

= 10 V, ID = 12 A 6.4 8

GS

= 4.5 V, ID = 10 A 8.4 11

GS

= 10 V , ID = 12 A, TJ = 125 °C 10.6 14

V

GS

Forward Transconductance VDS = 5 V, ID = 12 A 59 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 469 625 pF
Reverse Transfer Capacitance 22 35 pF

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 1.3 Ω

2790 3710 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 7.2 15 ns
Turn-Off Delay Time 35 57 ns

= 50 V, ID = 12 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

13 23 ns

Fall Time 613ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 5 V 23 32 nC
Gate to Source Charge 7.5 nC

V

DD

I

= 12 A

D

= 50 V,

43 60 nC

Gate to Drain “Miller” Charge 7 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

Notes:

1. R

is determined with the de vice m ount ed o n a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C, L = 1 mH, IAS = 25 A, VDD = 90 V, VGS = 10 V

©2010 Fairchild Semiconductor Corporation
FDMS86103L Rev.C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 68 108 nC

a. 50 °C/W when mounted on a

2

pad of 2 oz copper.

1 in

V

= 0 V, IS = 2 A (Note 2) 0.70 1.2

GS

= 0 V, IS = 12 A (Note 2) 0.78 1.3

V

GS

= 12 A, di/dt = 100 A/μs

I

F

2

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

57 90 ns

V

is determined by

θCA

www.fairchildsemi.com

FDMS86103L N-Channel Power Trench

012345

0

20

40

60

80

100

VGS = 4 V

VGS = 10 V

VGS = 3 V

VGS = 3.5 V

VGS = 4.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

I

D

, DRAIN CURRENT (A)

VDS, DRA IN T O SOURCE VOLTAGE (V)

020406080100

0

1

2

3

4

5

VGS = 3 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4.5 V

VGS = 4 V

VGS = 3.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 12 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

2345678910

0

10

20

30

40

TJ = 125 oC

ID = 12 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

12345

0

20

40

60

80

100

TJ = 25 oC

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma l i z e d O n - Resistanc e

vs Drain Current and Gate Voltage

®

MOSFET

Fig u r e 3. Nor m a lized O n - Resis t a nce

vs Junction Temperature

©2010 Fairchild Semiconductor Corporation
FDMS86103L Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

3

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