Fairchild FDMS86102LZ service manual

FDMS86102LZ

N-Channel Power Trench® MOSFET

100 V, 22 A, 25 mΩ

Features

 Max r
 Max r
 HBM ESD protection level > 6 KV typical (Note 4)

 100% UIL Tested
 RoHS Compliant

= 25 mΩ at VGS = 10 V, ID = 7 A

DS(on)

= 37 mΩ at VGS = 4.5 V, ID = 5.8 A

DS(on)

General Description

This N-Channel logic Level MOSFETs are produced using
Fairchild
that has
resistance and yet maintain superior switching performance.
G-S zener has been added to enhance ESD voltage level.

Semiconductor's advanced Power Trench

been special tailored to minimize the on-state

Applications

 DC - DC Conversion
 Inverter
 Synchronous Rectifier

May 2011

®

process

FDMS86102LZ N-Channel Power Trench

®

MOSFET

Top

Power 56

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 22

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 40
Single Pulse Avalanche Energy (Note 3) 84 mJ
Power Dissipation TC = 25 °C 69
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

D

= 25 °C unless otherwise noted

A

Bottom

D

D

D

Pin 1

S

S

S

G

= 25 °C 37

C

= 25 °C (Note 1a) 7

A

= 25 °C (Note 1a) 2.5

A

5

D

6

D

D

7

D

8

4

3

2

1

Thermal Characteristics

G

S

S

S

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.8
Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86102Z FDMS86102LZ Power 56 13 ’’ 12 mm 3000 units

©2011 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com
FDMS86102LZ Rev.C

FDMS86102LZ N-Channel Power Trench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 70 mV/°C

D

= 0 V 1 μA

GS

= 0 V ±10 μA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.5 2.5 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -6 mV/°C

D

V

= 10 V, ID = 7 A 18.6 25

GS

= 4.5 V, ID = 5.8 A 23.5 37

GS

= 10 V, ID = 7 A, TJ = 125 °C 31.2 42

V

GS

Forward Transconductance VDS = 5 V, ID = 7 A 26 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 175 235 pF
Reverse Transfer Capacitance 8.9 15 pF

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 0.9 Ω

979 1305 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g(TOT)
g(TOT)
gs
gd

Turn-On Delay Time
Rise Time 2.6 10 ns
Turn-Off Delay Time 19 35 ns

= 50 V, ID = 7 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

Fall Time 2.5 10 ns
Total Gate Charge V
Total Gate Charge V
Total Gate Charge 2.4 nC

= 0 V to 10 V

GS

= 0 V to 4.5 V 7.8 11 nC

GS

VDD = 50 V,
I

= 7 A

D

Gate to Drain “Miller” Charge 2.6 nC

6.7 14 ns

16 22 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

= 0 V, IS = 7 A (Note 2) 0.81 1.3

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boar d of FR-4 ma terial . R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting T

4. The diode connected between gate and source serves only as protection against ESD. No gate overvoltage rating is implied.

©2011 Fairchild Semiconductor Corporation 2 www.fairchildsemi.com
FDMS86102LZ Rev. C

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 25 40 nC

a.

50 °C/W when mounted on a

2

pad of 2 oz copper

1 in

= 25 °C; N-ch: L = 1 mH, IAS = 13 A, VDD = 90 V, VGS = 10 V.

J

GS

= 0 V, IS = 2 A (Note 2) 0.72 1.2

V

GS

= 7 A, di/dt = 100 A/μs

I

F

θJC

35 57 ns

is guaranteed by design while R

125 °C/W when mounted on

b.

a minimum pad of 2 oz copper

is determined by

θCA

V

FDMS86102LZ N-Channel Power Trench

012345

0

10

20

30

40

VGS = 3.5 V

VGS = 2.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 3 V

VGS = 4.5 V

VGS = 10 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 10203040

0

1

2

3

4

5

6

V

GS

= 3 V

VGS = 2.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4.5 V

VGS = 3.5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 7 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

20

40

60

80

100

TJ = 125 oC

ID = 7 A

TJ = 25 oC

V

GS

, GATE TO SOURCE VOLTA GE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5 4.0

0

10

20

30

40

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

40

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Norma li ze d On-R es is tance

vs Drain Current and Gate Voltage

®

MOSFET

Fi gu re 3. No rm al ized On-Resistance

vs Junction Temperature

©2011 Fairchild Semiconductor Corporation 3 www.fairchildsemi.com
FDMS86102LZ Rev. C

Figure 5. Transfer Characteristics

Figure 4.

On- Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current