Fairchild FDMS86101DC service manual
FDMS86101DC
Bottom
Top
D
D
D
D
S
S
S
G
Pin 1
S
G
S
S
D
D
D
D
Power 56
S
Pin 1
N-Channel Dual CoolTM Power Trench® MOSFET
100 V, 60 A, 7.5 mΩ
Features
Dual CoolTM Top Side Cooling PQFN package
Max r
Max r
High performance technology for extremely low r
100% UIL Tested
RoHS Compliant
= 7.5 mΩ at VGS = 10 V, ID = 14.5 A
DS(on)
= 12 mΩ at VGS = 6 V, ID = 11.5 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
Advancements in both silicon and Dual Cool
technologies have been combined to offer the lowest r
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
Primary DC-DC MOSFET
Secondary Synchronous Rectifier
Load Switch
February 2012
®
process.
TM
package
DS(on)
FDMS86101DC N-Channel Dual Cool
TM
Power Trench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJC
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2012 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C1
Drain to Source Voltage 100 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 60
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 200
Single Pulse Avalanche Energy (Note 3) 216 mJ
Power Dissipation TC = 25 °C 125
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case (Top Source) 2.3
Thermal Resistance, Junction to Case (Bottom Drain) 1.0
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11
86101 FDMS86101DC Dual Cool
= 25 °C unless otherwise noted
A
= 25 °C 88
C
= 25 °C (Note 1a) 14.5
A
= 25 °C (Note 1a) 3.2
A
TM
Power 56 13’’ 12 mm 3000 units
1
A
W
°C/W
www.fairchildsemi.com
FDMS86101DC N-Channel Dual Cool
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 80 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25°C 70 mV/°C
D
= 0 V 1 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA22.74V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -10 mV/°C
D
V
= 10 V, ID = 14.5 A 6 7.5
GS
= 6 V, ID = 11.5 A 8.3 12
GS
= 10 V, ID = 14.5 A, TJ = 125 °C 10 13
V
GS
Forward Transconductance VDD = 10 V, ID = 14.5 A 44 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 467 625 pF
Reverse Transfer Capacitance 23 35 pF
Gate Resistance 1.4 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
g(TOT)
gs
gd
Turn-On Delay Time
Rise Time 8.2 17 ns
Turn-Off Delay Time 25 40 ns
Fall Time 5.5 11 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
Total Gate Charge 8.3 nC
Gate to Drain “Miller” Charge 7 nC
= 50 V, VGS = 0 V,
V
DS
f = 1 MHz
= 50 V , ID = 14.5 A,
V
DD
V
= 10 V, R
GS
= 0 V to 5 V 18 25 nC
GS
GEN
= 6 Ω
V
DD
I
= 14.5 A
D
= 50 V
2354 3135 pF
14 25 ns
31 44 nC
mΩV
TM
Power Trench
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
©2012 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 62 99 nC
V
= 0 V, IS = 2.7 A (Note 2) 0.71 1.2
GS
= 0 V, IS = 14.5 A (Note 2) 0.78 1.3
V
GS
= 14.5 A, di/dt = 100 A/μs
I
F
2
54 87 ns
V
www.fairchildsemi.com
Thermal Characteristics
FDMS86101DC N-Channel Dual Cool
R
θJC
R
θJC
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
NOTES:
1. R
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
θJA
by the user's board design.
Thermal Resistance, Junction to Case (Top Source) 2.3
Thermal Resistance, Junction to Case (Bottom Drain) 1.0
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1c) 27
Thermal Resistance, Junction to Ambient (Note 1d) 34
Thermal Resistance, Junction to Ambient (Note 1e) 16
Thermal Resistance, Junction to Ambient (Note 1f) 19
Thermal Resistance, Junction to Ambient (Note 1g) 26
Thermal Resistance, Junction to Ambient (Note 1h) 61
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11
Thermal Resistance, Junction to Ambient (Note 1l) 13
a. 38 °C/W when mounted on
2
a 1 in
pad of 2 oz copper
is guaranteed by design while R
θJC
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
is determined
θCA
°C/W
TM
Power Trench
®
MOSFET
SS
SF
DS
DF
G
SS
SF
DS
DF
G
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 oC; N-ch: L = 0.3 mH, IAS = 38 A, VDD = 90 V, VGS = 10 V.
2
pad of 2 oz copper
©2012 Fairchild Semiconductor Corporation
FDMS86101DC Rev. C1
3
www.fairchildsemi.com
Loading...