Fairchild FDMS86101 service manual

FDMS86101

G

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D

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5

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1

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Bottom

Power 56

Top

Pin 1

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D

D

N-Channel PowerTrench® MOSFET

100 V, 60 A, 8 mΩ

FDMS86101 N-Channel PowerTrench

February 2012

Features

 Max r

 Max r

 Advanced Package and Silicon combination for low r

and high efficiency

 MSL1 robust package design

 100% UIL tested

 100% Rg tested

 RoHS Compliant

= 8 mΩ at VGS = 10 V, ID = 13 A

DS(on)

= 13.5 mΩ at VGS = 6 V, ID = 9.5 A

DS(on)

DS(on)

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

®

process thant has

Application

 DC-DC Conversion

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 100 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC = 25 °C 60

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 200

Single Pulse Avalanche Energy (Note 3) 173 mJ

Power Dissipation TC = 25 °C 104

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 80

C

= 25 °C (Note 1a) 12.4

A

= 25 °C (Note 1a) 2.5

A

A

W

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS86101 FDMS86101 Power 56 13 ’’ 12 mm 3000 units

©2012 Fairchild Semiconductor Corporation
FDMS86101 Rev.C6

Thermal Resistance, Junction to Case 1.2

Thermal Resistance, Junction to Ambient (Note 1a) 50

1

°C/W

www.fairchildsemi.com

FDMS86101 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 100 V

Breakdown Voltage Temperature
Coefficient

Zero Gate Voltage Drain Current VDS = 80 V, V

Gate to Source Leakage Current, Forward VGS = ±20 V, V

I

= 250 μA, referenced to 25 °C 66 mV/°C

D

= 0 V 800 nA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 2.0 2.9 4.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -9 mV/°C

D

V

= 10 V, ID = 13 A 6.3 8

GS

= 6 V, ID = 9.5 A 8.4 13.5

GS

= 10 V, ID = 13 A, TJ = 125 °C 10.9 14

V

GS

Forward Transconductance VDS = 10 V, ID = 13 A 45 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 460 610 pF

Reverse Transfer Capacitance 30 45 pF

Gate Resistance 1.0 3.0 Ω

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

g

g

gs

gd

Turn-On Delay Time

Rise Time 11 20 ns

Turn-Off Delay Time 27 44 ns

Fall Time 713ns

Total Gate Charge VGS = 0 V to 10 V

Total Gate Charge VGS = 0 V to 5 V 22 31 nC

Gate to Source Charge 9.5 nC

Gate to Drain “Miller” Charge 10.8 nC

= 50 V, VGS = 0 V,

V

DS

f = 1 MHz

= 50 V, ID = 13 A,

V

DD

V

= 10 V, R

GS

GEN

= 6 Ω

V

DD

I

= 13 A

D

= 50 V,

2255 3000 pF

15 27 ns

39 55 nC

mΩV

®

MOSFET

Drain-Source Diode Characteristics

V

= 0 V, IS = 2.1 A (Note 2) 0.7 1.2

V

SD

t

rr

Q

rr

Notes:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 61 98 nC

a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 173 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 34 A, VDD = 75 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 49 A.

©2012 Fairchild Semiconductor Corporation
FDMS86101 Rev.C6

GS

= 0 V, IS = 13 A (Note 2) 0.8 1.3

V

GS

= 13 A, di/dt = 100 A/μs

I

F

2

56 90 ns

is guaranteed by design while R

θJC

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

V

is determined by

θCA

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FDMS86101 N-Channel PowerTrench

012345

0

50

100

150

200

VGS = 6 V

VGS = 10 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 4.5 V

VGS = 5 V

VGS = 5.5 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0 50 100 150 200

0

1

2

3

4

5

V

GS

= 6 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 10 V

VGS = 4.5 V

VGS = 5.5 V

V

GS

= 5 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

ID = 13 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

T

J

, JUNCTION TEMPERATURE (

o

C)

46810

0

10

20

30

40

ID = 13 A

TJ = 25 oC

TJ = 125 oC

V

GS

, GATE TO SOURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

12345678

0

50

100

150

200

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

Nor m a l i z e d On-Resis t a n c e

vs Drain Current and Gate Voltage

®

MOSFET

Fi gure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDMS86101 Rev.C6

Figure 5. Transfer Characteristics

Figure 4.

On-Re sistance v s Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

3

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