Fairchild FDMS8570SDC service manual
4
3
2
1
5
6
7
8
S
S
S
G
D
D
D
D
Bottom Top
Pin 1
D
D
D
D
G
S
S
S
Power 56
FDMS8570SDC
N-Channel PowerTrench
®
SyncFET
25 V, 60 A, 2.8 mΩ
Features
Dual CoolTM PQFN package
Max r
Max r
High performance technology for extremely low r
SyncFETTM Schottky Body Diode
RoHS Compliant
= 2.8 mΩ at VGS = 10 V, ID = 28 A
DS(on)
= 3.3 mΩ at VGS = 4.5 V, ID = 25 A
DS(on)
DS(on)
TM
General Description
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench
Advancements in both silicon and package technologies have
been combined to offer the lowest r
excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
June 2012
®
process.
while maintaining
DS(on)
FDMS8570SDC N-Channel PowerTrench
®
SyncFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJC
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C
Drain to Source Voltage 25 V
Gate to Source Voltage 12 V
Drain Current -Continuous (Package limited) TC = 25 °C 60
-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 45 mJ
Power Dissipation TC = 25 °C 59
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case (Top Source) 4.4
Thermal Resistance, Junction to Case (Bottom Drain) 2.1
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11
10DC FDMS8570SDC Power 56 13’’ 12 mm 3000 units
= 25°C unless otherwise noted
A
= 25 °C (Note 1a) 28
A
= 25 °C (Note 1a) 3.3
A
1
TM
A -Continuous T
W
°C/W
www.fairchildsemi.com
FDMS8570SDC N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current VGS = +12 V/-8 V, V
I
= 10 mA, referenced to 25 °C 23 mV/°C
D
= 0 V 500 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.1 1.5 2.2 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 10 mA, referenced to 25 °C -3 mV/°C
D
V
= 10 V, ID = 28 A 2.1 2.8
GS
= 4.5 V, ID = 25 A 2.4 3.3
GS
= 10 V, ID = 28 A, TJ = 125 °C 2.9 3.9
V
GS
Forward Transconductance VDS = 5 V, ID = 28 A 215 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 662 pF
Reverse Transfer Capacitance 94 pF
= 13 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.8 Ω
2825 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 4ns
Turn-Off Delay Time 33 ns
= 13 V, ID = 28 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 3ns
g
g
gs
gd
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 22 nC
Gate to Source Gate Charge 6.4 nC
V
DD
I
= 28 A
D
= 13 V,
Gate to Drain “Miller” Charge 4.4 nC
11 ns
42 nC
mΩV
®
SyncFET
TM
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 19 nC
V
= 0 V, IS = 2 A (Note 2) 0.6 0.8
GS
= 0 V, IS = 28 A (Note 2) 0.8 1.2
V
GS
= 28 A, di/dt = 300 A/μs
I
F
2
22 ns
V
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Thermal Characteristics
FDMS8570SDC N-Channel PowerTrench
R
θJC
R
θJC
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
R
θJA
NOTES:
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
1. R
θJA
by the user's board design.
Thermal Resistance, Junction to Case (Top Source) 4.4
Thermal Resistance, Junction to Case (Bottom Drain) 2.1
Thermal Resistance, Junction to Ambient (Note 1a) 38
Thermal Resistance, Junction to Ambient (Note 1b) 81
Thermal Resistance, Junction to Ambient (Note 1c) 27
Thermal Resistance, Junction to Ambient (Note 1d) 34
Thermal Resistance, Junction to Ambient (Note 1e) 16
Thermal Resistance, Junction to Ambient (Note 1f) 19
Thermal Resistance, Junction to Ambient (Note 1g) 26
Thermal Resistance, Junction to Ambient (Note 1h) 61
Thermal Resistance, Junction to Ambient (Note 1i) 16
Thermal Resistance, Junction to Ambient (Note 1j) 23
Thermal Resistance, Junction to Ambient (Note 1k) 11
Thermal Resistance, Junction to Ambient (Note 1l) 13
a. 38 °C/W when mounted on
2
a 1 in
pad of 2 oz copper
is guaranteed by design while R
θJC
b. 81 °C/W when mounted on
a minimum pad of 2 oz copper
is determined
θCA
°C/W
®
SyncFET
TM
SS
SF
DS
DF
G
c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in
d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in
f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in
j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper
l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
of 45 mJ is based on starting TJ = 25 °C, L = 0.4 mH, IAS = 15 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 23.8 A.
3. E
AS
©2012 Fairchild Semiconductor Corporation
FDMS8570SDC Rev.C
2
pad of 2 oz copper
2
pad of 2 oz copper
2
pad of 2 oz copper
3
SF
SS
DS
DF
G
www.fairchildsemi.com
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