Fairchild FDMS8570S service manual
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Power 56
D
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S
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G
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Pin 1
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Top
FDMS8570S
N-Channel PowerTrench
®
SyncFET
25 V, 60 A, 2.8 mΩ
Features
Max r
Max r
High performance technology for extremely low r
SyncFETTM Schottky Body Diode
RoHS Compliant
= 2.8 mΩ at VGS = 10 V, ID = 24 A
DS(on)
= 3.3 mΩ at VGS = 4.5 V, ID = 22 A
DS(on)
DS(on)
TM
General Description
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench
Advancements in both silicon and package technologies have
been combined to offer the lowest r
excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
April 2012
®
process.
while maintaining
DS(on)
FDMS8570S N-Channel PowerTrench
®
SyncFET
TM
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage 12 V
Drain Current -Continuous (Package limited) TC = 25 °C 60
-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 45 mJ
Power Dissipation TC = 25 °C 48
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25°C unless otherwise noted
A
= 25 °C (Note 1a) 24
A
= 25 °C (Note 1a) 2.5
A
A -Continuous T
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case TC = 25 °C 2.6
Thermal Resistance, Junction to Ambient (Note 1a) 50
°C/W
Package Marking and Ordering Information
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D1
Device Marking Device Package Reel Size Tape Width Quantity
10OD FDMS8570S Power 56 13’’ 12 mm 3000 units
1
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FDMS8570S N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current VGS = +12 V/-8 V, V
I
= 10 mA, referenced to 25 °C 23 mV/°C
D
= 0 V 500 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.1 1.5 2.2 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 10 mA, referenced to 25 °C -3 mV/°C
D
V
= 10 V, ID = 24 A 2.1 2.8
GS
= 4.5 V, ID = 22 A 2.4 3.3
GS
= 10 V, ID = 24 A, TJ = 125 °C 2.9 3.9
V
GS
Forward Transconductance VDS = 5 V, ID = 24 A 215 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 662 pF
Reverse Transfer Capacitance 94 pF
= 13 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.8 Ω
2825 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 4ns
Turn-Off Delay Time 33 ns
= 13 V, ID = 24 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 3ns
g
g
gs
gd
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 22 nC
Gate to Source Gate Charge 6.4 nC
V
DD
I
= 24 A
D
= 13 V,
Gate to Drain “Miller” Charge 4.4 nC
11 ns
42 nC
mΩV
®
SyncFET
TM
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.6 0.8
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
θJA
by the user's board design.
2. Pulse Test: Pulse W idth < 300 μs, Duty cycle < 2.0%.
3. EAS of 45 mJ is based on starting TJ = 25 °C, L = 0.4 mH, IAS = 15 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 23.8 A.
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 19 nC
50 °C/W when mounted on a
a)
2
1 in
pad of 2 oz copper
SS
SF
DS
DF
G
GS
= 0 V, IS = 24 A (Note 2) 0.8 1.2
V
GS
= 24 A, di/dt = 300 A/μs
I
F
SF
SS
DF
DS
G
2
22 ns
is guaranteed by design while R
θJC
125 °C/W when mounted on
b)
a minimum pad of 2 oz
copper.
V
is determined
θCA
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FDMS8570S N-Channel PowerTrench
0 0.3 0.6 0.9 1.2 1.5
0
20
40
60
80
100
VGS = 3.5 V
VGS = 3 V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 2.5 V
VGS = 10V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
020406080100
0.5
0.9
1.8
2.7
3.6
4.5
VGS = 2.5 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 3 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 28 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANC E
T
J
, JUNCTION TEMPERATURE (
o
C)
2345678910
1
2
3
4
5
6
7
8
9
TJ = 125 oC
ID = 28 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
1.0 1.5 2.0 2.5 3.0
0
20
40
60
80
100
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE V OLTAGE (V)
0.00.20.40.60.81.01.2
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Normali z e d O n - R e s i stance
vs Drain Current and Gate Voltage
SyncFET
®
TM
Fig u r e 3. Nor m a lized On R e sistan c e
vs Junction Temperature
©2012 Fairchild Semiconductor Corporation
FDMS8570S Rev.D1
Figure 5. Transfer Characteristics
Figure 4.
On-Resist ance vs Gate to
Source Voltage
Figure 6.
Sour ce to D rain D iode
Forward Voltage vs Source Current
3
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