Fairchild FDMS8558SDC service manual

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Bottom Top

Pin 1

Power 56

FDMS8558SDC

N-Channel PowerTrench

SyncFET

25 V, 90 A, 1.5 mΩ

Features

 Dual CoolTM PQFN package  Max r  Max r  High performance technology for extremely low r  SyncFETTM Schottky Body Diode

 RoHS Compliant

= 1.5 mΩ at VGS = 10 V, ID = 38 A

DS(on)

= 1.7 mΩ at VGS = 4.5 V, ID = 36 A

DS(on)

General Description

This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench Advancements in both silicon and package technologies have been combined to offer the lowest r excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.

Applications

 Synchronous Rectifier for DC/DC Converters  Telecom Secondary Side Rectification  High End Server/Workstation Vcore Low Side

June 2012

while maintaining

DS(on)

process.

FDMS8558SDC N-Channel PowerTrench

SyncFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Thermal Characteristics

θJC

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

Drain to Source Voltage 25 V Gate to Source Voltage 12 V Drain Current -Continuous (Package limited) TC = 25 °C 90

-Pulsed 140 Single Pulse Avalanche Energy (Note 3) 145 mJ Power Dissipation TC = 25 °C 89 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

09DC FDMS8558SDC Power 56 13’’ 12 mm 3000 units

= 25°C unless otherwise noted

= 25 °C (Note 1a) 38

= 25 °C (Note 1a) 3.3

A -Continuous T

°C/W

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FDMS8558SDC N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 20 V, V Gate to Source Leakage Current VGS = +12 V/-8 V, V

= 10 mA, referenced to 25 °C 24 mV/°C

= 0 V 500 μA

= 0 V ±100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.1 1.4 2.2 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 10 mA, referenced to 25 °C -3 mV/°C

= 10 V, ID = 38 A 1.1 1.5

= 4.5 V, ID = 36 A 1.3 1.7

= 10 V, ID = 38 A, TJ = 125 °C 1.6 2.1

Forward Transconductance VDS = 5 V, ID = 38 A 317 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 1508 pF Reverse Transfer Capacitance 195 pF

= 13 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 0.9 Ω

5118 pF

Switching Characteristics

d(on)

d(off)

Q Q Q Q

Turn-On De lay Time Rise Time 8ns Turn-Off Delay Time 51 ns

= 13 V, ID = 38 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 7ns

g g gs gd

Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V 38 nC Gate to Source Gate Charge 10 nC

= 38 A

= 13 V,

Gate to Drain “Miller” Charge 9.7 nC

14 ns

81 nC

mΩV

SyncFET

Drain-Source Diode Characteristics

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 49 nC

= 0 V, IS = 2 A (Note 2) 0.6 0.8

= 0 V, IS = 38 A (Note 2) 0.8 1.2

= 38 A, di/dt = 300 A/μs

35 ns

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Thermal Characteristics

FDMS8558SDC N-Channel PowerTrench

θJC

θJA

NOTES:

1. R

is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R

θJA

by the user's board design.

Thermal Resistance, Junction to Case (Top Source) 2.8 Thermal Resistance, Junction to Case (Bottom Drain) 1.4 Thermal Resistance, Junction to Ambient (Note 1a) 38 Thermal Resistance, Junction to Ambient (Note 1b) 81 Thermal Resistance, Junction to Ambient (Note 1c) 27 Thermal Resistance, Junction to Ambient (Note 1d) 34 Thermal Resistance, Junction to Ambient (Note 1e) 16 Thermal Resistance, Junction to Ambient (Note 1f) 19 Thermal Resistance, Junction to Ambient (Note 1g) 26 Thermal Resistance, Junction to Ambient (Note 1h) 61 Thermal Resistance, Junction to Ambient (Note 1i) 16 Thermal Resistance, Junction to Ambient (Note 1j) 23 Thermal Resistance, Junction to Ambient (Note 1k) 11 Thermal Resistance, Junction to Ambient (Note 1l) 13

a. 38 °C/W when mounted on

a 1 in

pad of 2 oz copper

is guaranteed by design while R

θJC

b. 81 °C/W when mounted on a minimum pad of 2 oz copper

is determined

θCA

°C/W

SyncFET

c. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper d. Still air, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper e. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in f. Still air, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper i. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, 1 in2 pad of 2 oz copper j. 200FPM Airflow, 20.9x10.4x12.7mm Aluminum Heat Sink, minimum pad of 2 oz copper k. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, 1 in2 pad of 2 oz copper l. 200FPM Airflow, 45.2x41.4x11.7mm Aavid Thermalloy Part # 10-L41B-11 Heat Sink, minimum pad of 2 oz copper

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 145 mJ is based on starting TJ = 25 °C, L = 0.9 mH, IAS = 18 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 39 A.

pad of 2 oz copper

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