Fairchild FDMS8558S service manual
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Power 56
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S
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Pin 1
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FDMS8558S
N-Channel PowerTrench
®
SyncFET
25 V, 90 A, 1.5 mΩ
Features
Max r
Max r
High performance technology for extremely low r
SyncFETTM Schottky Body Diode
RoHS Compliant
= 1.5 mΩ at VGS = 10 V, ID = 33 A
DS(on)
= 1.7 mΩ at VGS = 4.5 V, ID = 31 A
DS(on)
DS(on)
TM
General Description
This N-Channel SyncFETTM is produced using Fairchild
Semiconductor’s advanced PowerTrench
Advancements in both silicon and package technologies have
been combined to offer the lowest r
excellent switching performance by extremely low Junction-toAmbient thermal resistance. This device has the added benefit
of an efficient monolithic Schottky body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Telecom Secondary Side Rectification
High End Server/Workstation Vcore Low Side
April 2012
®
while maintaining
DS(on)
process.
FDMS8558S N-Channel PowerTrench
®
SyncFET
TM
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 25 V
Gate to Source Voltage 12 V
Drain Current -Continuous (Package limited) TC = 25 °C 90
-Pulsed 140
Single Pulse Avalanche Energy (Note 3) 145 mJ
Power Dissipation TC = 25 °C 78
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25°C unless otherwise noted
A
= 25 °C (Note 1a) 33
A
= 25 °C (Note 1a) 2.5
A
A -Continuous T
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case TC = 25 °C 1.6
Thermal Resistance, Junction to Ambient TA = 25 °C (Note 1a) 50
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
09OD FDMS8558S Power 56 13’’ 12 mm 3000 units
1
www.fairchildsemi.com
FDMS8558S N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 25 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 20 V, V
Gate to Source Leakage Current VGS = +12 V/-8 V, V
I
= 10 mA, referenced to 25 °C 24 mV/°C
D
= 0 V 500 μA
GS
= 0 V ±100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.1 1.4 2.2 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 10 mA, referenced to 25 °C -3 mV/°C
D
V
= 10 V, ID = 33 A 1.1 1.5
GS
= 4.5 V, ID = 31 A 1.3 1.7
GS
= 10 V, ID = 33 A, TJ = 125 °C 1.6 2.1
V
GS
Forward Transconductance VDS = 5 V, ID = 33 A 317 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1508 pF
Reverse Transfer Capacitance 195 pF
= 13 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.9 Ω
5118 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 8ns
Turn-Off Delay Time 51 ns
= 13 V, ID = 33 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 7ns
g
g
gs
gd
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 38 nC
Gate to Source Gate Charge 10 nC
V
DD
I
= 33 A
D
= 13 V,
Gate to Drain “Miller” Charge 9.7 nC
14 ns
81 nC
mΩV
®
SyncFET
TM
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a FR-4 board using a specified pad of 2 oz copper as shown below. R
θJA
by the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
of 145 mJ is based on starting TJ = 25 °C, L = 0.9 mH, IAS = 18 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 39 A.
3. E
AS
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 49 nC
SS
SF
DS
DF
G
50 °C/W when mounted on a
a)
1 in2 pad of 2 oz copper
V
= 0 V, IS = 2 A (Note 2) 0.6 0.8
GS
= 0 V, IS = 33 A (Note 2) 0.8 1.2
V
GS
= 33 A, di/dt = 300 A/μs
I
F
DF
DS
G
2
SF
θJC
SS
35 ns
is guaranteed by design while R
125 °C/W when mounted on a
b)
minimum pad of 2 oz copper.
V
is determined
θCA
www.fairchildsemi.com
FDMS8558S N-Channel PowerTrench
0 0.2 0.4 0.6 0.8
0
20
40
60
80
100
120
140
VGS = 3.5 V
VGS = 3 V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 2.5 V
VGS = 10V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0 20406080100120140
0
1
2
3
4
5
6
VGS = 2.5 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 3 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 38 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANC E
T
J
, JUNCTION TEMPERATURE (
o
C)
2345678910
0
1
2
3
4
5
6
TJ = 125 oC
ID = 38 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.21.51.82.12.42.7
0
20
40
60
80
100
120
140
TJ = 125 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0
0.01
0.1
1
10
100
200
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Norm a l i z e d O n - R e sistance
vs Drain Current and Gate Voltage
SyncFET
®
TM
Fi g u re 3. No r m alized O n Resist a n ce
vs Junction Temperature
©2012 Fairchild Semiconductor Corporation
FDMS8558S Rev.D1
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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