Fairchild FDMS8460 service manual

May 2009

FDMS8460 N-Channel Power Trench

FDMS8460

N-Channel Power Trench® MOSFET

40V, 49A, 2.2m:

Features

 Max r

 Max r

 Advanced Package and Silicon combination for low r

 MSL1 robust package design

 100% UIL tested

 RoHS Compliant

= 2.2m: at VGS = 10V, ID = 25A

DS(on)

= 3.0m: at VGS = 4.5V, ID = 21.7A

DS(on)

Top

Power 56

DS(on)

Bottom

S

S

D

D

D

D

General Description

This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.

®

process thant has

Application

 DC - DC Conversion

S

Pin 1

G

5

D

D

6

D

7

8

D

G

4

S

3

S

2

1

S

tm

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Thermal Characteristics

R

TJC

R

TJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS8460 FDMS8460 Power 56 13’’ 12 mm 3000 units

©2009 Fairchild Semiconductor Corporation
FDMS8460 Rev.C

Drain to Source Voltage 40 V

Gate to Source Voltage ±20 V

Drain Current -Continuous (Package limited) TC= 25°C 49

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 160

Single Pulse Avalanche Energy (Note 3) 864 mJ

Power Dissipation TC = 25°C 104

Power Dissipation T

Operating and Storage Junction Temperature Range -55 to +150 °C

Thermal Resistance, Junction to Case 1.2

Thermal Resistance, Junction to Ambient (Note 1a) 50

1

= 25°C unless otherwise noted

A

= 25°C 167

C

= 25°C (Note 1a) 25

A

= 25°C (Note 1a) 2.5

A

1

A

W

°C/W

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FDMS8460 N-Channel Power Trench

Electrical Characteristics T

= 25°C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

'BV
'T

I

DSS

I

GSS

DSS

DSS

J

Drain to Source Breakdown Voltage ID = 250PA, VGS = 0V 40 V

Breakdown Voltage Temperature
Coefficient

= 250PA, referenced to 25°C 32 mV/°C

I

D

Zero Gate Voltage Drain Current VGS= 0V, VDS = 32V, 1 PA

Gate to Source Leakage Current VGS = ±20V, VDS= 0V ±100 nA

On Characteristics

V

GS(th)

'V
'T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250PA 1.0 1.9 3.0 V

Gate to Source Threshold Voltage
Temperature Coefficient

Static Drain to Source On Resistance

= 250PA, referenced to 25°C -7.5 mV/°C

I

D

V

= 10V, ID = 25A 2.0 2.2

GS

= 4.5V, ID = 21.7A 2.6 3.0

GS

= 10V, ID = 25A, TJ = 125°C 2.6 3.3

V

GS

Forward Transconductance VDD = 5V, ID = 25A 137 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance

Output Capacitance 1470 1955 pF

Reverse Transfer Capacitance 170 250 pF

= 20V, VGS = 0V,

V

DS

f = 1MHz

Gate Resistance f = 1MHz 1.4 :

5415 7205 pF

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q

Q

Q

Q

Turn-On Delay Time

Rise Time 919ns

Turn-Off Delay Time 48 78 ns

= 20V, ID = 25A,

V

DD

V

= 10V, R

GS

GEN

= 6:

Fall Time 714ns

g

g

gs

gd

Total Gate Charge VGS = 0V to 10V

Total Gate Charge VGS = 0V to 4.5V 36 51 nC

Gate to Source Charge 15 nC

V
I

= 20V,

DD

= 25A

D

Gate to Drain “Miller” Charge 10 nC

19 35 ns

78 110 nC

m:V

®

MOSFET

Drain-Source Diode Characteristics

V

SD

t

rr

Q

rr

NOTES:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

TJA

the user's board design.

2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.

3. Starting T

©2009 Fairchild Semiconductor Corporation
FDMS8460 Rev.C1

Source to Drain Diode Forward Voltage

Reverse Recovery Time

Reverse Recovery Charge 40 64 nC

= 25°C, L = 3mH, IAS = 24A, VDD = 40V, VGS = 10V

J

V

GS

V

GS

= 25A, di/dt = 100A/Ps

I

F

a. 50°C/W when mounted on a

2

pad of 2 oz copper.

1 in

= 0V, IS= 25A (Note 2) 0.8 1.3

= 0V, IS= 2.1A (Note 2) 0.7 1.2

53 85 ns

is guaranteed by design while R

TJC

b. 125°C/W when mounted on a
minimum pad of 2 oz copper.

2

TCA

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V

is determined by

FDMS8460 N-Channel Power Trench

Typical Characteristics T

160

VGS = 4V

120

VGS = 4.5V

80

40

, DRAIN CURRENT (A)

D

I

0

0123

Figure 1.

1.8

1.6

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e

VGS = 10V

V

, DRAIN TO SOURCE VOLTAGE (V)

DS

On-Region Characteristics Figure 2.

ID = 25A
V

= 10V

GS

T

, JUNCTION TEMPERATURE (

J

vs Junction Temperature

= 25°C unless otherwise noted

J

VGS = 3.5V

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

VGS = 3V

o

C)

5

PULSE DURATION = 80Ps

VGS = 3V

DUTY CYCLE = 0.5%MAX

4

VGS = 3.5V

3

2

NORMALIZED

1

DRAIN TO SOURCE ON-RESISTANCE

0.5

04080120160

I

, DRAIN CURRENT(A)

D

VGS= 4V

V

=4.5V

GS

VGS=10V

N o r m a l i z e d O n - R e s i s t a n c e

vs Drain Current and Gate Voltage

10

ID= 25A

8

(m:)

6

DRAIN TO

,

4

DS(on)

r

2

SOURCE ON-RESISTANCE

0

246810

Figure 4.

TJ= 25oC

V

, GATE TO SOURCE VOLTAGE (V)

GS

O n - R es i s t a n c e vs G a t e t o

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

TJ= 125oC

Source Voltage

®

MOSFET

160

PULSE DURATION = 80Ps
DUTY CYCLE = 0.5%MAX

120

VDS= 5V

TJ= 150oC

80

40

, DRAIN CURRENT (A)

D

I

0

012345

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2009 Fairchild Semiconductor Corporation
FDMS8460 Rev.C

1

TJ = 25oC

TJ = -55oC

800

V

= 0V

GS

100

10

1

TJ= 150oC

TJ = 25oC

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

1E-3

0.0 0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

S o u r ce t o D r a i n Di o d e

TJ = -55oC

Forward Voltage vs Source Current

3

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