Fairchild FDMS8320L service manual
FDMS8320L
Power 56
D
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D
D
G
S
S
S
Pin 1
Bottom
Top
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D
D
D
S
S
S
G
Pin 1
N-Channel PowerTrench® MOSFET
40 V, 100 A, 1.1 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 1.1 mΩ at VGS = 10 V, ID = 32 A
DS(on)
= 1.5 mΩ at VGS = 4.5 V, ID = 27 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
OringFET / Load Switching
Synchronous Rectification
DC-DC Conversion
June 2012
, fast switching speed ang body
DS(on)
FDMS8320L N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 40 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 100
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 150
Single Pulse Avalanche Energy (Note 3) 264 mJ
Power Dissipation TC = 25 °C 104
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 238
C
= 25 °C (Note 1a) 36
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8320L FDMS8320L Power 56 13 ’’ 12 mm 3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8320L Rev.C3
Thermal Resistance, Junction to Case 1.2
Thermal Resistance, Junction to Ambient (Note 1a) 50
1
°C/W
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FDMS8320L N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 40 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 32 V, V
Gate to Source Leakage Current VGS = ±20 V, V
I
= 250 μA, referenced to 25 °C 21 mV/°C
D
= 0 V 1 μA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.7 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 32 A 0.8 1.1
GS
= 4.5 V, ID = 27 A 1.0 1.5
GS
= 10 V, ID = 32 A, TJ = 125 °C 1.2 1.7
V
GS
Forward Transconductance VDS = 5 V, ID = 32 A 206 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 2840 3780 pF
Reverse Transfer Capacitance 169 295 pF
= 20 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.1 1.3 2.6 Ω
8350 11110 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 19 35 ns
Turn-Off Delay Time 68 110 ns
= 20 V, ID = 32 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 17 30 ns
g
g
gs
gd
To tal Gate Charge VGS = 0 V to 10 V
To tal Gate Charge VGS = 0 V to 4.5 V 58 117 nC
Gate to Source Charge 19.2 nC
V
DD
I
= 32 A
D
= 20 V,
Gate to Drain “Miller” Charge 16.5 nC
17 30 ns
121 170 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
1. R
is determined with the device mo unt ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 42 A, VDD = 36 V, VGS = 10 V.
FDMS8320L Rev.C3
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 59 95 nC
Reverse Recovery Time
Reverse Recovery Charge 104 167 nC
a)
50 °C/W when mounted on a
1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
V
= 0 V, IS = 2.1 A (Note 2) 0.65 1.1
GS
= 0 V, IS = 32 A (Note 2) 0.74 1.2
V
GS
= 32 A, di/dt = 100 A/μs
I
F
= 32 A, di/dt = 300 A/μs
I
F
SF
DF
DS
G
2
SS
θJC
b)
125 °C/W when mounted on a
minimum pad of 2 oz copper.
68 108 ns
53 85 ns
is guaranteed by design while R
V
is determined by
θCA
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FDMS8320L N-Channel PowerTrench
0 0.2 0.4 0.6 0.8 1.0
0
30
60
90
120
150
VGS = 3 V
VGS = 3.5 V
VGS = 10 V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
VGS = 4 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0306090120150
0
1
2
3
4
5
V
GS
= 3.5 V
VGS = 3 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 4 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 32 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
1
2
3
4
5
TJ = 125 oC
ID = 32 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.01.52.02.53.03.5
0
30
60
90
120
150
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
1000
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Norma l i z e d O n - Resistanc e
vs Drain Current and Gate Voltage
®
MOSFET
Fi g ure 3 . Norm aliz e d On R esist ance
vs Junction Temperature
FDMS8320L Rev.C3
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
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