FDMS8025S
4
3
2
1
5
6
7
8
Power 56
D
D
D
D
S
S
S
G
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
and
TM
General Description
The FDMS8025S has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance.This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
N-Channel PowerTrench® SyncFET
30 V, 49 A, 2.8 mΩ
Features
Max r
Max r
Advanced package and silicon combination for low r
high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 2.8 mΩ at VGS = 10 V, ID = 24 A
DS(on)
= 3.5 mΩ at VGS = 4.5 V, ID = 21 A
DS(on)
DS(on)
FDMS8025S N-Channel PowerTrench
August 2010
®
SyncFET
TM
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25°C 49
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 100
Single Pulse Avalanche Energy (Note 3) 66 mJ
Power Dissipation TC = 25°C 50
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25°C unless otherwise noted
C
= 25°C 109
C
= 25°C (Note 1a) 24
A
= 25°C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8025S FDMS8025S Power 56 13 ’’ 12
©2010 Fairchild Semiconductor Corporation
FDMS8025S Rev.C1
Thermal Resistance, Junction to Case 2.5
Thermal Resistance, Junction to Ambient (Note 1a) 50
1
°C/W
mm 3000 units
www.fairchildsemi.com
FDMS8025S N-Channel PowerTrench
Electrical Characteristics T
= 25°C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage I
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current V
Gate to Source Leakage Current, Forward V
= 1 mA, VGS = 0 V30 V
D
I
= 10 mA, referenced to 25°C 19 mV/°C
D
= 24 V, V
DS
= 20 V, V
GS
= 0 V500μA
GS
= 0 V 100nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, I
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
Forward Transconductance V
I
= 10 mA, referenced to 25°C -5 mV/°C
D
V
= 10 V, ID = 24 A 2.22.8
GS
= 4.5 V, ID = 21 A3.03.5
GS
= 10 V, ID = 24 A, T
V
GS
= 5 V, ID = 24 A 145 S
DS
= 1 mA 1.2 1.7 3.0 V
D
= 125°C 3.1 4.0
J
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 815 1085 pF
Reverse Transfer Capacitance 85 125 pF
Gate Resistance 1.0 2.5 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 4.5 10 ns
Turn-Off Delay Time 29 46 ns
Fall Time 3.7 10 ns
Total Gate Charge V
Total Gate Charge V
Gate to Source Charge 5.9 nC
Gate to Drain “Miller” Charge 4.6 nC
= 15 V, VGS = 0 V,
V
DS
f = 1MHz
= 15 V, ID = 24 A,
V
DD
V
= 10 V, R
GS
= 0 V to 10 V
GS
= 0 V to 4.5 V1623nC
GS
GEN
= 6 Ω
V
DD
I
= 24 A
D
= 15 V,
2255 3000 pF
11 19 ns
34 47 nC
mΩV
®
SyncFET
TM
Drain-Source Diode Characteristics
V
= 0 V, IS = 2 A (Note 2) 0.62 0.8
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the devi ce m ount ed on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
Source-Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 27 44 nC
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. EAS of 66 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 21 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2010 Fairchild Semiconductor Corporation
FDMS8025S Rev.C1
GS
= 0 V, IS = 24 A (Note 2) 0.8 1.2
V
GS
= 24 A, di/dt = 300 A/μs
I
F
2
26 42 ns
is guaranteed by design while R
θJC
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
V
is determined by
θCA
www.fairchildsemi.com
FDMS8025S N-Channel PowerTrench
0.00.51.01.52.0
0
20
40
60
80
100
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
VGS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 3 V
VGS = 10 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
020406080100
0
2
4
6
8
VGS = 6 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
V
GS
= 4 V
VGS = 4.5 V
VGS = 3 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = 24 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
3
6
9
12
TJ = 125 oC
ID = 24 A
TJ = 25 oC
V
GS
, GATE TO S OURCE VO L TAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μ s
DUTY CYCLE = 0.5% MAX
1234
0
20
40
60
80
100
TJ = 125 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 125 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25°C unless otherwise noted
J
Norma l i z e d O n - Resistance
vs Drain Current and Gate Voltage
®
SyncFET
TM
Fig ure 3. Norm a lized On Re s ista n ce
vs Junction Temperature
©2010 Fairchild Semiconductor Corporation
FDMS8025S Rev.C1
Figure 5. Transfer Characteristics
Figure 4.
On-Resis tance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
FDMS8025S N-Channel PowerTrench
0 10203040
0
2
4
6
8
10
ID = 24 A
VDD = 20 V
V
DD
= 10 V
V
GS
, GATE TO SOURCE VOLTAGE (V)
Qg, GATE CHARGE (nC)
VDD = 15 V
0.1 1 10
100
1000
50
f = 1 MHz
V
GS
= 0 V
CAPACITANCE (pF)
VDS, DRAIN TO SOURCE VOLTAGE (V)
C
rss
C
oss
C
iss
30
5000
0.01 0.1 1 10 100
1
10
40
TJ = 100 oC
TJ = 25 oC
TJ = 125 oC
tAV, TIME IN AVALANCHE ( ms)
I
AS
, AVALANCHE CURRENT (A)
25 50 75 100 125 150
0
20
40
60
80
100
120
V
GS
= 4.5 V
Limited by Package
R
θJC
= 2.5 oC/W
V
GS
= 10 V
I
D
, DRAIN CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
0.01 0.1 1 10 100200
0.01
0.1
1
10
100
200
1 s
100 μs
10 ms
DC
10 s
100 ms
1 ms
I
D
, DRAIN CURRENT (A)
VDS, DRAIN to SOURCE VOLTAGE (V)
THIS AR E A IS
LIMITED BY r
DS(on)
SINGLE PULSE
T
J
= MAX RATED
R
θJA
= 125
o
C/W
T
A
= 25
o
C
10-410-310-210-1110
100 1000
0.5
1
10
100
1000
2000
SINGLE PULSE
R
θJA
= 125
o
C/W
T
A
= 25
o
C
P(
PK
), PEAK TRANSIENT POWER (W)
t, PULSE WIDTH (sec)
Typical Characteristics T
Figure 7.
Gate Charge Characteristics
= 25°C unless otherwise noted
J
Figure 8.
Capacitance vs Drain
to Source Voltage
®
SyncFET
TM
Figure 9.
Unc l a m p e d I ndu c t i v e
Switching Capability
©2010 Fairchild Semiconductor Corporation
FDMS8025S Rev.C1
Figure 11. Forward Bias Safe
Op
erating Area
Figure 10.
Ma xim um C ont inu ous Dra in
Current vs Case Temperature
Figure 12.
Single Pulse Maximum
Power Dissipation
4
www.fairchildsemi.com
FDMS8025S N-Channel PowerTrench
10
-4
10
-3
10
-2
10
-1
110
100 1000
0.0001
0.001
0.01
0.1
1
SINGLE PULSE
R
θJA
= 125 oC/W
(Note 1b)
DUTY CYCLE-DESCENDING ORDER
NORMALIZED THERMAL
IMPEDANCE,
Z
θJA
t, RECTANGULAR PULSE DURATION (sec)
D = 0.5
0.2
0.1
0.05
0.02
0.01
2
P
DM
t
1
t
2
NOTES:
DUTY FACTOR: D = t1/t
2
PEAK TJ = PDM x Z
θJA
x R
θJA
+ T
A
Typical Characteristics T
Figure 13.
= 25°C unless otherwise noted
J
Junction-to-Ambient Transient Thermal Response Curve
®
SyncFET
TM
©2010 Fairchild Semiconductor Corporation
FDMS8025S Rev.C1
5
www.fairchildsemi.com
Typical Characteristics (continued)
0 50 100 150 200 250
-5
0
5
10
15
20
25
di/dt = 3 00 A/μs
CURRENT (A)
TIME (ns)
0 5 10 15 20 25 30
0.000001
0.00001
0.0001
0.001
0.01
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
I
DSS
, REVERSE LEAKAGE CURRENT (A)
VDS, REVERSE VOLTAGE (V)
SyncFET Schottky body diode
Characteristics
FDMS8025S N-Channel PowerTrench
Fairchild’s SyncFET process embeds a Schottky diode in parallel
with PowerTrench MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 14 shows the reverse recovery
characteristic of the FDMS8025S.
Figure 14. FDMS8025S SyncF ET body
diode reverse recovery characteristic
Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power
in the device.
®
SyncFET
TM
Figure 15. SyncFET body diode reverse
leakage versus drain-source voltage
©2010 Fairchild Semiconductor Corporation
FDMS8025S Rev.C1
6
www.fairchildsemi.com
FDMS8025S N-Channel PowerTrench
Dimensional Outline and Pad Layout
®
SyncFET
TM
©2010 Fairchild Semiconductor Corporation
FDMS8025S Rev.C1
7
www.fairchildsemi.com
TRADEMARKS
tm
®
tm
The following includes registered and unregistered tradema rks and service marks, owned by Fair child Semiconduct or and/or its gl obal subsidiaries, a nd is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
DEUXPEED
Dual Cool™
EcoSPARK
EfficentMax™
ESBC™
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FACT Quiet Series™
FACT
FAST
FastvCore™
FETBench™
FlashWriter
®
®
®
®
®
®
*
FPS™
F-PFS™
®
FRFET
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
®
MotionMax™
Motion-SPM™
OptiHiT™
OPTOLOGIC
OPTOPLANAR
®
®
SM
®
PDP SPM™
Power-SPM™
PowerTrench
PowerXS™
Programmable Active Droop™
QFET
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
SPM
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
®
™
®
®*
The Power Franchise
TinyBoost™
TinyBuck™
TinyCalc™
TinyLogic
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
μSerDes™
UHC
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
®
®
®
®
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
FDMS8025S N-Channel PowerTrench
®
SyncFET
TM
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into t he bod y or (b ) support or sustain life,
and (c) whose failure to perform when properly used in acco rdance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufact ures of semiconductor products are experienci ng counterfeiting of their
parts. Customers who inadvertently purchase counterfe it parts e xperi en ce many problems such as loss of b rand rep utati on, substa nda rd perf orman ce, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairch ild strongly encourage s custom ers to purch ase Fairchi ld parts either directly from Fa irchild or from Author ized Fairchild
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PRODUCT STATUS DEFINITIONS
Definition of Terms
.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
Datasheet Identification Product Status Definition
Advance Information Formative / In Design
Preliminary First Production
No Identification Needed Full Production
Obsolete Not In Production
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplement ary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fai rchild
Semiconductor. The datasheet is for reference information only.
Rev. I48
©2010 Fairchild Semiconductor Corporation 8 www.fairchildsemi.com
FDMS8025S Rev.C1
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