Fairchild FDMS8020 service manual

FDMS8020

Power 56

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N-Channel PowerTrench® MOSFET

30 V, 42 A, 2.5 mΩ Features

 Max r  Max r

 Advanced Package and Silicon combination for low r

and high efficiency

 Next generation enhanced body diode technology,

engineered for soft recovery

 MSL1 robust package design  100% UIL tested  RoHS Compliant

= 2.5 mΩ at VGS = 10 V, ID = 26 A

DS(on)

= 3.6 mΩ at VGS = 4.5 V, ID = 21.5 A

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low r diode reverse recovery performance.

Applications

 VRM Vcore Switching for Desktop and Server  OringFET / Load Switching  DC-DC Conversion  Motor Bridge Switch

November 2011

, fast switching speed ang body

DS(on)

FDMS8020 N-Channel PowerTrench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 30 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 42

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 150 Single Pulse Avalanche Energy (Note 3) 93 mJ Power Dissipation TC = 25 °C 65 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C 131

= 25 °C (Note 1a) 26

= 25 °C (Note 1a) 2.5

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case 1.9 Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS8020 FDMS8020 Power 56 13 ’’ 12 mm 3000 units

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FDMS8020 N-Channel PowerTrench

Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, V Gate to Source Leakage Current, Forward VGS = 20 V, V

= 250 μA, referenced to 25 °C 14 mV/°C

= 0 V 1 μA

= 0 V 100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.5 3.0 V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -6 mV/°C

= 10 V, ID = 26 A 2.0 2.5

= 4.5 V, ID = 21.5 A 2.6 3.6

= 10 V, ID = 26 A, TJ = 125 °C 2.9 3.7

Forward Transconductance VDS = 5 V, ID = 26 A 154 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 1050 1400 pF Reverse Transfer Capacitance 115 175 pF

= 15 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 0.9 Ω

2855 3800 pF

Switching Characteristics

d(on)

d(off)

Q Q Q Q

Turn-On Delay Time Rise Time 5.7 12 ns Turn-Off Delay Time 32 52 ns

= 15 V, ID = 26 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 410ns

g g gs gd

Total Gate Charge VGS = 0 V to 10 V Total Gate Charge VGS = 0 V to 4.5 V 21 29 nC Gate to Source Charge 7.3 nC

= 26 A

= 15 V,

Gate to Drain “Miller” Charge 6.0 nC

12 22 ns

43 61 nC

mΩV

MOSFET

Drain-Source Diode Characteristics

= 0 V, IS = 2.1 A (Note 2) 0.68 1.1

Notes:

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. boar d of FR-4 ma terial . R

1. R

θJA

the user's board design.

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 25 A, VDD = 27 V, VGS = 10 V.

4.As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 18 33 nC Reverse Recovery Time Reverse Recovery Charge 36 57 nC

a) 125 °C/W when mounted on a

50 °C/W when mounted on a

pad of 2 oz copper

1 in

= 0 V, IS = 26 A (Note 2) 0.78 1.2

= 26 A, di/dt = 100 A/μs

= 26 A, di/dt = 300 A/μs

37 58 ns

30 48 ns

is guaranteed by design while R

θJC

minimum pad of 2 oz copper.

is determined by

θCA

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FDMS8020 N-Channel PowerTrench

012345

120

150

VGS = 3 V

VGS = 10 V

VGS = 4.5 V

VGS = 4 V

VGS = 3.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

, DRAIN CURRENT (A)

VDS, DRAIN TO SOURCE VOLTAGE (V)

0306090120150

VGS = 4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTA NCE

, DRAIN CURRENT (A)

= 3 V

VGS = 3.5 V

VGS = 4 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

ID = 26 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, JUNCTION TEMPERATURE (

246810

TJ = 125 oC

ID = 26 A

TJ = 25 oC

, GATE TO SOURCE VOLTA G E (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

1.0 1.5 2.0 2.5 3.0 3.5 4.0

120

150

TJ = 25 oC

TJ = 150 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VOLTAGE (V)

0.0 0 .2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

100

200

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On-Region Characteristics Figure 2.

= 25 °C unless otherwise noted

Norma l i z e d O n - Resistanc e

vs Drain Current and Gate Voltage

MOSFET

Fig u r e 3. Nor m a lized O n - Resis t a nce

vs Junction Temperature

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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