Fairchild FDMS8018 service manual
FDMS8018
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
Pin 1
D
D
D
D
S
S
S
G
N-Channel PowerTrench® MOSFET
30 V, 120 A, 1.8 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 1.8 mΩ at VGS = 10 V, ID = 30 A
DS(on)
= 2.4 mΩ at VGS = 4.5 V, ID = 26 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
VRM Vcore Switching for Desktop and Server
OringFET / Load Switching
DC-DC Conversion
Motor Bridge Switch
December 2011
, fast switching speed ang body
DS(on)
FDMS8018 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS8018 FDMS8018 Power 56 13 ’’ 12 mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMS8018 Rev.C
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 120
-Continuous (Package limited) T
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 180
Single Pulse Avalanche Energy (Note 3) 126 mJ
Power Dissipation TC = 25 °C 83
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
Thermal Resistance, Junction to Case 1.5
Thermal Resistance, Junction to Ambient (Note 1a) 50
= 25 °C unless otherwise noted
A
= 100 °C 100
C
= 25 °C 174
C
= 25 °C (Note 1a) 30
A
= 25 °C (Note 1a) 2.5
A
1
A
W
°C/W
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FDMS8018 N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 250 μA, referenced to 25 °C 14 mV/°C
D
= 0 V 1 μA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 1.5 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 30 A 1.5 1.8
GS
= 4.5 V, ID = 26 A 1.9 2.4
GS
= 10 V, ID = 30 A, TJ = 125 °C 2.2 2.7
V
GS
Forward Transconductance VDS = 5 V, ID = 30 A 194 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1380 1835 pF
Reverse Transfer Capacitance 137 210 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.9 Ω
3935 5235 pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
Turn-On Delay Time
Rise Time 7.3 15 ns
Turn-Off Delay Time 38 62 ns
= 15 V, ID = 30 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 4.8 10 ns
g
g
gs
gd
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 28 39 nC
Gate to Source Charge 10.3 nC
V
DD
I
= 30 A
D
= 15 V,
Gate to Drain “Miller” Charge 7.7 nC
15 27 ns
58 61 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
= 0 V, IS = 2.1 A (Note 2) 0.67 1.1
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 29 A, VDD = 27 V, VGS = 10 V.
4.As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS8018 Rev.C
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 25 40 nC
Reverse Recovery Time
Reverse Recovery Charge 46 72 nC
a)
50 °C/W when mounted on a
1 in2 pad of 2 oz copper
SS
SF
DS
DF
G
GS
= 0 V, IS = 30 A (Note 2) 0.77 1.2
V
GS
= 30 A, di/dt = 100 A/μs
I
F
= 30 A, di/dt = 300 A/μs
I
F
SF
DS
DF
G
2
SS
43 69 ns
34 55 ns
is guaranteed by design while R
θJC
b)
125 °C/W when mounted on a
minimum pad of 2 oz copper.
V
is determined by
θCA
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FDMS8018 N-Channel PowerTrench
0 0.5 1.0 1.5 2.0 2.5
0
30
60
90
120
150
180
VGS = 3.5 V
VGS = 3 V
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 4 V
VGS = 10V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0 30 60 90 120 150 180
0
1
2
3
4
5
VGS = 4 V
VGS = 3.5 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
VGS = 4.5 V
VGS = 3 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
ID = 30 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANC E
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
0
2
4
6
8
TJ = 125 oC
ID = 30 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.0 1.5 2.0 2.5 3.0 3.5 4.0
0
30
60
90
120
150
180
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
1000
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
®
MOSFET
Norma l i z e d O n - Resistanc e
vs Drain Current and Gate Voltage
Fi g ure 3 . Norm a lize d On Re sist a nce
vs Junction Temperature
FDMS8018 Rev.C
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gat e to
Source Voltage
Figure 6.
Source to Drain Dio de
Forward Voltage vs Source Current
3
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