Fairchild FDMS7698 service manual
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D
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5
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3
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1
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Bottom
Power 56
Top
Pin 1
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FDMS7698
N-Channel PowerTrench® MOSFET
30 V, 22 A, 10 mΩ
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology,
engineered for soft recovery
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 10 mΩ at VGS = 10 V, ID = 13.5 A
DS(on)
= 15 mΩ at VGS = 4.5 V, ID = 11.0 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and server
OringFET / Load Switching
DC-DC Conversion
May 2011
, fast switching speed and body
DS(on)
FDMS7698 N-Channel PowerTrench
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 22
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 29 mJ
Power Dissipation TC = 25 °C 29
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 44
C
= 25 °C (Note 1a) 13.5
A
= 25 °C (Note 1a) 2.5
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 4.4
Thermal Resistance, Junction to Ambient (Note 1a) 50
°C/W
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7698 FDMS7698 Power 56 13 ’’ 12 mm 3000 units
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C1
1
www.fairchildsemi.com
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 250 μA, referenced to 25 °C 16 mV/°C
D
= 0 V 1 μA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.0 2.0 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -6 mV/°C
D
= 10 V, ID = 13.5 A 8.1 10
V
GS
V
= 4.5 V, ID = 11.0 A 12.2 15
GS
= 10 V, ID = 13.5 A
V
GS
T
J
= 125 °C
11 14
Forward Transconductance VDS = 5 V, ID = 13.5 A 53 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 370 495 pF
Reverse Transfer Capacitance 35 55 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 0.3 1.6 3.2 Ω
1205 1605 pF
FDMS7698 N-Channel PowerTrench
mΩ
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 310ns
Turn-Off Delay Time 20 36 ns
Fall Time 310ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 7.5 12 nC
Gate to Source Charge 3.9 nC
Gate to Drain “Miller” Charge 2.0 nC
= 15 V, ID = 13.5 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Drain-Source Diode Characteristics
V
= 0 V, IS = 2.1 A (Note 2) 0.75 1.1
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in . boa rd of FR-4 mat erial . R
1. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 8 15 nC
Reverse Recovery Time
Reverse Recovery Charge 13 24 nC
50 °C/W when mounted on a
a)
1 in2 pad of 2 oz copper
GS
= 0 V, IS = 13.5 A (Note 2) 0.86 1.2
V
GS
= 13.5 A, di/dt = 100 A/μs
I
F
= 13.5 A, di/dt = 300 A/μs
I
F
= 15 V,
V
DD
I
= 13.5 A
D
918ns
17 24 nC
24 38 ns
19 34 ns
is guaranteed by design while R
θJC
b) 125 °C/W when mounted
on a minimum pad of 2 oz copper.
is determined by
θCA
V
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. E
of 29 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V.
AS
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C1
2
www.fairchildsemi.com
FDMS7698 N-Channel PowerTrench
0.0 0.5 1.0 1.5 2.0 2.5
0
10
20
30
40
50
VGS = 6 V
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
VGS = 3.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
I
D
, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)
0 1020304050
0
1
2
3
4
5
VGS = 4.5 V
PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTA NCE
I
D
, DRAIN CURRENT (A)
V
GS
= 6 V
VGS = 3.5 V
VGS = 4 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.6
0.8
1.0
1.2
1.4
1.6
ID = 13.5 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TE MPERATURE (
o
C)
246810
5
10
15
20
25
30
TJ = 125 oC
ID = 13.5 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTA G E (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
12345
0
10
20
30
40
50
TJ = 25 oC
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAGE (V)
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
50
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On-Region Characteristics Figure 2.
= 25 °C unless otherwise noted
J
Nor maliz ed O n-R esi stanc e
vs Drain Current and Gate Voltage
®
MOSFET
Figur e 3. No rm ali ze d On - R esist ance
vs Junction Temperature
©2011 Fairchild Semiconductor Corporation
FDMS7698 Rev.C1
Figure 5. Transfer Characteristics
Figure 4.
On-Resistance vs Gate to
Source Voltage
Figure 6.
Source to Drain Diode
Forward Voltage vs Source Current
3
www.fairchildsemi.com
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