Fairchild FDMS7692A service manual
FDMS7692A
N-Channel PowerTrench® MOSFET
30 V, 8 mΩ
FDMS7692A N-Channel PowerTrench
June 2009
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
Next generation enhanced body diode technology, engineered
for soft recovery.
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 8 mΩ at VGS = 10 V, ID = 13 A
DS(on)
= 14 mΩ at VGS = 4.5 V, ID = 10 A
DS(on)
Top
Power 56
DS(on)
Bottom
S
D
D
D
D
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.
fast switching speed and body
DS(on),
Applications
IMVP Vcore Switching for Notebook
VRM Vcore Switching for Desktop and Server
OringFET / Load Switch
DC-DC Conversion
Pin 1
S
S
G
D
5
D
6
D
7
8
D
4
3
2
1
®
MOSFET
G
S
S
S
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 28
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 50
Single Pulse Avalanche Energy (Note 3) 21 mJ
Power Dissipation TC = 25 °C 27
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
A
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case 4.6
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7692A FDMS7692A Power 56 13 ’’ 12 mm 3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7692A Rev.B
= 25 °C unless otherwise noted
= 25 °C 45
C
= 25 °C (Note 1a) 13.5
A
= 25 °C (Note 1a) 2.5
A
1
A
W
°C/W
www.fairchildsemi.com
FDMS7692A N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
∆BV
∆T
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 250 µA, referenced to 25 °C 13 mV/°C
D
= 0 V 1 µA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
∆V
∆T
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.0 2.0 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 µA, referenced to 25 °C -6 mV/°C
D
V
= 10 V, ID = 13 A 6.8 8
GS
= 4.5 V, ID = 10 A 10 14
GS
= 10 V, ID = 13 A, TJ = 125 °C 9.5 12
V
GS
Forward Transconductance VDS = 5 V, ID = 13 A 68 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 325 435 pF
Reverse Transfer Capacitance 45 65 pF
Gate Resistance 1.5 3.0 Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 2.7 10 ns
Turn-Off Delay Time 17 31 ns
Fall Time 2.3 10 ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 7 10 nC
Gate to Source Charge 3.4 nC
Gate to Drain “Miller” Charge 1.9 nC
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
= 15 V, ID = 13 A,
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
V
DD
I
= 13 A
D
= 15 V,
1015 1350 pF
816ns
15 22 nC
mΩV
®
MOSFET
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1i n2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C, L = 0.3 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V.
©2009 Fairchild Semiconductor Corporation
FDMS7692A Rev.B
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 6 12 nC
Reverse Recovery Time
Reverse Recovery Charge 12 21 nC
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
V
= 0 V, IS = 2.1 A (Note 2) 0.75 1.1
GS
= 0 V, IS = 13 A (Note 2) 0.84 1.2
V
GS
= 13 A, di/dt = 100 A/µs
I
F
= 13 A, di/dt = 300 A/µs
I
F
2
θJC
21 34 ns
17 31 ns
is guaranteed by design while R
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
V
is determined by
θCA
www.fairchildsemi.com
FDMS7692A N-Channel PowerTrench
Typical Characteristics T
50
40
30
20
DRAIN CURRENT (A)
,
10
D
I
0
0.0 0.5 1.0 1.5 2.0
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
Figure 1.
On Region Characteristics Figure 2.
1.6
ID = 13 A
1.5
V
= 10 V
GS
1.4
1.3
1.2
1.1
NORMALIZED
1.0
0.9
DRAIN TO SOURCE ON-RESISTANCE
0.8
-75 -50 -25 0 25 50 75 100 125 150
T
,
JUNCTION TEMPERATURE
J
VGS = 10 V
VGS = 4.5 V
VGS = 4.0 V
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
= 25 °C unless otherwise noted
J
VGS = 3.5 V
VGS = 3.0 V
o
(
C
)
10
VGS = 3.0 V
NORMALIZED
8
6
4
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
VGS = 3.5 V
VGS = 4.0 V
2
DRAIN TO SOURCE ON-RESISTANCE
0
0 1020304050
VGS = 4. 5 V
I
,
DRAIN CURRENT (A)
D
V
= 10 V
GS
Norma li zed On -R esi st ance
vs Drain Current and Gate Voltage
30
)
Ω
m
25
(
ID = 13 A
20
DRAIN TO
,
15
DS(on)
r
10
SOURCE ON-RESISTANCE
5
246810
TJ = 25 oC
V
,
GATE TO SOURCE VOLTAGE (V)
GS
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
TJ = 125 oC
®
MOSFET
Fi gu re 3. Normalized O n R es istance
vs Junction Temperature
50
PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX
40
V
= 5 V
DS
30
20
, DRAIN CURRENT (A)
10
D
I
0
12345
TJ = 150 oC
VGS, GATE TO SOURC E V OLTAGE (V)
Figure 5. Transfer Characteristics
©2009 Fairchild Semiconductor Corporation
FDMS7692A Rev.B
TJ = 25 oC
TJ = -55 oC
Figure 4.
On-Resistance vs Gate to
Source Voltage
100
V
= 0 V
GS
10
TJ = 150 oC
1
TJ = 25 oC
0.1
, REVERSE DRAIN CURRENT (A)
S
I
0.01
0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
Sou rce to Dr ain Diode
TJ = -55 oC
Forward Voltage vs Source Current
3
www.fairchildsemi.com
Loading...