Fairchild FDMS7682 service manual

FDMS7682

Power 56

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N-Channel PowerTrench® MOSFET

30 V, 6.3 mΩ Features

 Max r  Max r  Advanced Package and Silicon combination for low r

and high efficiency

 Next generation enhanced body diode technology,

engineered for soft recovery

 MSL1 robust package design  100% UIL tested  RoHS Compliant

= 6.3 mΩ at VGS = 10 V, ID = 14 A

DS(on)

= 10.4 mΩ at VGS = 4.5 V, ID = 11 A

DS(on)

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low r diode reverse recovery performance.

Applications

 IMVP Vcore Switching for Notebook  VRM Vcore Switching for Desktop and server  OringFET / Load Switching  DC-DC Conversion

July 2010

, fast switching speed and body

DS(on)

FDMS7682 N-Channel PowerTrench

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

, T

STG

Drain to Source Voltage 30 V Gate to Source Voltage (Note 4) ±20 V Drain Current -Continuous (Package limited) TC = 25 °C 22

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 80 Single Pulse Avalanche Energy (Note 3) 29 mJ Power Dissipation TC = 25 °C 33 Power Dissipation T Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

= 25 °C 59

= 25 °C (Note 1a) 16

= 25 °C (Note 1a) 2.5

Thermal Characteristics

θJC

θJA

Thermal Resistance, Junction to Case 3.7 Thermal Resistance, Junction to Ambient (Note 1a) 50

°C/W

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7682 FDMS7682 Power 56 13 ’’ 12 mm 3000 units

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Electrical Characteristics T

= 25 °C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

ΔBV ΔT

DSS

GSS

DSS

DSS J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V Breakdown Voltage Temperature

Coefficient Zero Gate Voltage Drain Current VDS = 24 V, V Gate to Source Leakage Current, Forward VGS = ±20 V, V

= 250 μA, referenced to 25 °C 15 mV/°C

= 0 V 1 μA

= 0 V 100 nA

On Characteristics

GS(th)

ΔV ΔT

DS(on)

GS(th)

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA1.251.93.0V Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

= 250 μA, referenced to 25 °C -6 mV/°C

= 10 V, ID = 14 A 5.2 6.3

= 4.5 V, ID = 11 A 8.0 10.4

= 10 V, ID = 14 A, TJ = 125 °C 7.0 8.5

Forward Transconductance VDS = 5 V, ID = 14 A 70 S

Dynamic Characteristics

iss

oss

rss

Input Capacitance Output Capacitance 479 640 pF Reverse Transfer Capacitance 50 75 pF

= 15 V, VGS = 0 V,

f = 1 MHz

Gate Resistance 0.7 2.4 Ω

1416 1885 pF

FDMS7682 N-Channel PowerTrench

mΩV

MOSFET

Switching Characteristics

d(on)

d(off)

Q Q Q Q

g g gs gd

Turn-On Delay Time Rise Time 2.7 10 ns Turn-Off Delay Time 22 35 ns

= 15 V, ID = 14 A,

= 10 V, R

GEN

= 6 Ω

Fall Time 2.2 10 ns To tal Gate Charge VGS = 0 V to 10 V To tal Gate Charge VGS = 0 V to 4.5 V 9.9 14 nC Gate to Source Charge 4.3 nC Gate to Drain “Miller” Charge 2.8 nC

Drain-Source Diode Characteristics

= 0 V, IS = 2.1 A (Note 2) 0.74 1.2

Notes:

1. R

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 ma terial. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage Reverse Recovery Time

Reverse Recovery Charge 10 21 nC Reverse Recovery Time Reverse Recovery Charge 17 30 nC

50 °C/W when mounted on a 1 in2 pad of 2 oz copper

= 0 V, IS = 14 A (Note 2) 0.83 1.3

= 14 A, di/dt = 100 A/μs

= 14 A, di/dt = 300 A/μs

= 14 A

= 15 V,

is guaranteed by design while R

θJC

125 °C/W when mounted on a minimum pad of 2 oz copper.

9.4 19 ns

21 30 nC

27 43 ns

20 36 ns

is determined by

θCA

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 29 mJ is based on starting TJ = 25 °C, L = 0.3 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.1 mH, IAS = 21 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

FDMS7682 Rev.C

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FDMS7682 N-Channel PowerTrench

0123

VGS = 4.5 V

VGS = 10 V

VGS = 3.5 V

VGS = 4 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

VGS = 5 V

, DRAIN CURRENT (A)

, DRAIN TO SOURCE VOLTAGE (V)

0 20406080

VGS = 4.5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

, DRAIN CURRENT (A)

= 3.5 V

VGS = 4 V

VGS = 5 V

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

1.5

1.6

ID = 14 A V

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESISTAN CE

, JUNCTION TEMPERATURE (

246810

ID = 14 A

TJ = 25 oC

TJ = 125 oC

, GATE TO S O URCE VO LTAGE (V)

DS(on)

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

12345

TJ = 150 oC

= 5 V

PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

, DRAIN CURRENT (A)

VGS, GATE TO SOURCE VO LTAGE (V)

0.20.40.60.81.01.2

0.01

0.1

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

= 0 V

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

MOSFET

Nor ma liz ed On- Resis tance

vs Drain Current and Gate Voltage

Fi gure 3. Normalized On Resistance

vs Junction Temperature

FDMS7682 Rev.C

Figure 5. Transfer Characteristics

Figure 4.

On-Resistance vs Gate to

Source Voltage

Figure 6.

Source to Drain Diode

Forward Voltage vs Source Current

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