Fairchild FDMS7678 service manual
FDMS7678
Power 56
D
D
D
D
G
S
S
S
Pin 1
Bottom
Top
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D
D
D
S
S
S
G
Pin 1
N-Channel Power Trench® MOSFET
30 V, 26 A, 5.5 mΩ
Features
Max r
Max r
High performance technology for extremely low r
Termination is Lead-free
RoHS Compliant
= 5.5 mΩ at VGS = 10 V, ID = 17.5 A
DS(on)
= 6.8 mΩ at VGS = 4.5 V, ID = 15 A
DS(on)
DS(on)
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power
been especially tailored to minimize the on-state resistance.
device is well suited for Power Management and load switching
applications common in Notebook Computers and Portable
Battery Packs.
Applications
DC - DC Buck Converters
Notebook battery power management
Load switch in Notebook
FDMS7678 N-Channel Power Trench
April 2012
Trench® process that has
This
®
MOSFET
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 3) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 26
Drain Current -Continuous (Silicon limited) T
-Continuous T
-Pulsed 70
Single Pulse Avalanche Energy (Note 4) 54 mJ
Power Dissipation TC = 25 °C 41
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
= 25 °C unless otherwise noted
A
= 25 °C 72
C
= 25 °C (Note 1a) 17.5
A
= 25 °C (Note 1a) 2.3
A
A
W
Thermal Characteristics
R
θJC
R
θJA
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7678 FDMS7678 Power 56 13 ’’ 12 mm 3000 units
©2012 Fairchild Semiconductor Corporation
FDMS7678 Rev. C1
Thermal Resistance, Junction to Case 3
Thermal Resistance, Junction to Ambient (Note 1a) 50
1
°C/W
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Electrical Characteristics T
= 25 °C unless otherwise noted
J
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
ΔBV
ΔT
I
DSS
I
GSS
DSS
DSS
J
Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
I
= 250 μA, referenced to 25 °C 21 mV/°C
D
= 0 V 1 μA
GS
= 0 V 100 nA
DS
On Characteristics
V
GS(th)
ΔV
ΔT
r
DS(on)
g
FS
GS(th)
J
Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.2 1.5 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
Static Drain to Source On Resistance
I
= 250 μA, referenced to 25 °C -5 mV/°C
D
V
= 10 V, ID = 17.5 A 4.7 5.5
GS
= 4.5 V, ID = 15 A 5.6 6.8
GS
= 10 V, ID = 17.5 A TJ = 125 °C 6.3 7.4
V
GS
Forward Transconductance VDD = 5 V, ID = 17.5 A 90 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 620 820 pF
Reverse Transfer Capacitance 75 110 pF
= 15 V, VGS = 0 V
V
DS
f = 1 MHz
Gate Resistance 0.1 0.7 2.5 Ω
1810 2410 pF
FDMS7678 N-Channel Power Trench
mΩV
®
MOSFET
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g(TOT)
Q
gs
Q
gd
Turn-On Delay Time
Rise Time 410ns
Turn-Off Delay Time 26 41 ns
= 15 V, ID = 17.5 A
V
DD
V
= 10 V, R
GS
GEN
= 6 Ω
Fall Time 310ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge V
= 0 V to 4.5 V 14 19 nC
GS
Gate to Source Charge 4.4 nC
Gate to Drain “Miller” Charge 3.9 nC
Drain-Source Diode Characteristics
V
= 0 V, IS = 1.9 A (Note 2) 0.7 1.2
V
SD
t
rr
Q
rr
NOTES:
1. R
is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 13 23 nC
a. 50 °C/W when mounted on
2
a 1 i n
GS
= 0 V, IS = 17.5 A (Note 2) 0.8 1.2
V
GS
= 17.5 A, di/dt = 100 A/μs
I
F
p a d o f 2 o z c o p p e r
= 15 V
V
DD
I
= 17.5 A
D
10 19 ns
28 39 nC
30 49 ns
is guaranteed by design while R
θJC
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
is determined by
θCA
V
DS
DF
G
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0 %.
3. As an N-ch device, the negative V
4. E
of 54 mJ is based on starting TJ = 25 oC, L = 0.3 mH, IAS = 19 A, VDD = 27 V, VGS = 10 V.
AS
©2012 Fairchild Semiconductor Corporation
FDMS7678 Rev. C1
rating is for low duty cycle pulse occurence only. No continuous rating is implied.
GS
SF
SS
SF
SS
DS
DF
G
2
www.fairchildsemi.com
FDMS7678 N-Channel Power Trench
0.0 0.5 1.0 1.5 2.0
0
10
20
30
40
50
60
70
VGS = 3 V
VGS = 3.5 V
VGS = 4.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
VGS = 6 V
VGS = 10 V
I
D
, DRAIN CURRENT (A)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0 10203040506070
0
1
2
3
4
VGS = 3 V
VGS = 6 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
, DRAIN CURRENT (A)
VGS = 3.5 V
VGS = 4.5 V
V
GS
= 10 V
-75 -50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
ID = 17.5 A
V
GS
= 10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
T
J
, JUNCTION TEMPERATURE (
o
C)
246810
3
6
9
12
15
TJ = 125 oC
ID = 17.5 A
TJ = 25 oC
V
GS
, GATE TO SOURCE VOLTAGE (V)
r
DS(on)
,
DRAIN TO
SOURCE ON-RESISTANCE
(mΩ)
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
1.0 1.5 2.0 2.5 3.0 3.5
0
10
20
30
40
50
60
70
TJ = 150 oC
V
DS
= 5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
TJ = -55 oC
TJ = 25 oC
I
D
, DRAIN CURRENT (A)
VGS, GATE TO SOURCE VOLTAG E (V)
0.0 0.2 0 .4 0.6 0.8 1.0 1.2
0.001
0.01
0.1
1
10
100
TJ = -55 oC
TJ = 25 oC
TJ = 150 oC
V
GS
= 0 V
I
S
, REVERSE DRAIN CURRENT (A)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Typical Characteristics T
Figure 1.
On Region Characteristics
= 25 °C unless otherwise noted
J
Figure 2.
Normalized On-Resista nc e
vs Drain Current and Gate Voltage
®
MOSFET
Fi g ure 3 . Norm a l ized O n Res i stan c e
vs Junction Temperature
©2012 Fairchild Semiconductor Corporation
FDMS7678 Rev. C1
Figure 5. Transfer Characteristics
Figure 4.
On-Resi stance vs Gate to
Source Voltage
Figure 6.
Sou rce t o Drain Diode
Forward Voltage vs Source Current
3
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