Fairchild FDMS7672 service manual

FDMS7672

N-Channel PowerTrench® MOSFET

30 V, 5.0 mΩ
Features

 Max r
 Max r
 Advanced Package and Silicon design for low r

efficiency

 Next generation enhanced body diode technology, engineered

for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications

 MSL1 robust package design
 100% UIL tested
 RoHS Compliant

= 5.0 mΩ at VGS = 10 V, ID = 19 A

DS(on)

= 6.9 mΩ at VGS = 4.5 V, ID = 15 A

DS(on)

DS(on)

and high

General Description

This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.

Applications

 IMVP Vcore Switching for Notebook
 VRM Vcore Switching for Desktop and Server
 OringFET / Load Switch
 DC-DC Conversion

April 2009

, fast switching speed and body

DS(on)

FDMS7672 N-Channel PowerTrench

®

MOSFET

Top

D

Bottom

D

D

D

Pin 1

S

S

S

G

D

5

D

6

D

7

8

D

4

3

2
1

Power 56

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 28

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 90
Single Pulse Avalanche Energy (Note 3) 72 mJ
Power Dissipation TC = 25 °C 48
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 80

C

= 25 °C (Note 1a) 19

A

= 25 °C (Note 1a) 2.5

A

Thermal Characteristics

G

S

S

S

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 2.6
Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7672 FDMS7672 Power 56 13 ’’ 12 mm 3000 units

©2009 Fairchild Semiconductor Corporation
FDMS7672 Rev.

D

°C/W

1

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Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V

I

= 250 µA, referenced to 25 °C 15 mV/°C

D

= 0 V 1 µA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.25 2.0 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 µA, referenced to 25 °C -7 mV/°C

D

V

= 10 V, ID = 19 A 3.6 5.0

GS

= 4.5 V, ID = 15 A 5.2 6.9

GS

= 10 V, ID = 19 A, TJ = 125 °C 4.9 6.8

V

GS

Forward Transconductance VDS = 5 V, ID = 19 A 64 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 685 910 pF
Reverse Transfer Capacitance 90 130 pF

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

2225 2960 pF

Gate Resistance 0.7 1.5 Ω

FDMS7672 N-Channel PowerTrench

mΩV

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 510ns
Turn-Off Delay Time 25 40 ns

= 15 V, ID = 19 A,

V

DD

= 10 V, R

V

GS

GEN

Fall Time 410ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 14 19 nC
Gate to Source Charge 7.6 nC
Gate to Drain “Miller” Charge 3.7 nC

Drain-Source Diode Characteristics

V

= 0 V, IS = 2.1 A (Note 2) 0.7 0.95

V

SD

t

rr

Q

rr

t

a

t

b

S Softness (t
t

rr

Q

rr

Notes:

is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R

1. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 14 24 nC
Reverse Recovery Fall Time 15 nC
Reverse Recovery Rise Time 17 nC

) 1.1

b/ta

Reverse Recovery Time
Reverse Recovery Charge 25 40 nC

a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.

GS

= 0 V, IS = 19 A (Note 2) 0.8 1.1

V

GS

= 19 A, di/dt = 100 A/µs

I

F

= 19 A, di/dt = 300 A/µs

I

F

= 6 Ω

V

DD

= 19 A

I

D

= 15 V,

θJC

13 23 ns

31 44 nC

32 51 ns

26 42 ns

is guaranteed by design while R

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

θCA

V

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. E

of 72 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 12 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 17 A.

AS

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

FDMS7672 Rev.

D

2

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FDMS7672 N-Channel PowerTrench

Typical Characteristics T

90

60

30

DRAIN CURRENT (A)

,

D

I

0

0.0 0.5 1.0 1.5 2.0

Figure 1.

1.6

ID = 19 A

= 10 V

V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

VGS = 10 V

VGS = 5 V

PULSE DURATION = 80 µs

VGS = 4.5 V

V

,

DRAIN TO SOURCE VOLTAGE (V)

DS

DUTY CYCLE = 0.5% MAX

On Region Characteristics Figure 2.

T

,

JUNCTION TE MPERATURE (oC)

J

= 25 °C unless otherwise noted

J

VGS = 4 V

VGS = 3.5 V

6

5

VGS = 3.5 V

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

4

VGS = 4 V

3

NORMALIZED

2

VGS = 4.5 V

1

V

DRAIN TO SOURCE ON-RESISTANCE

0

0306090

I

VGS = 5 V

, DRAIN CURRENT (A)

D

GS

= 10 V

Nor m a l i z e d O n-Resis t a n c e

vs Drain Current and Gate Voltage

16

)

Ω

m

(

12

8

DRAIN TO

,

DS(on)

r

4

SOURCE ON-RESISTANCE

0

246810

ID = 19 A

TJ = 25 oC

V

,

GATE TO SOURCE VOLTAGE (V)

GS

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

TJ = 125 oC

®

MOSFET

, DRAIN CURRENT (A)

D

I

FDMS7672 Rev.

Fi g ure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

90

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

V

= 5 V

DS

60

TJ = 150 oC

30

TJ = 25 oC

0

012345

VGS, GATE TO SOURCE VOLTAGE (V)

TJ = -55 oC

Figure 5. Transfer Characteristics

D

Figure 4.

On-Re sistance vs Gate to

Source Voltage

100

V

= 0 V

GS

10

1

0.1

0.01

, REVERSE DRAIN CURRENT (A)

S

I

0.001

0.0 0.2 0.4 0.6 0.8 1.0 1.2

TJ = 150 oC

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Sou rce to Drain Diode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

3

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