Fairchild FDMS7670AS service manual
FDMS7670AS
N-Channel PowerTrench® SyncFET
30 V, 42 A, 3 m:
Features
Max r
Max r
Advanced Package and Silicon combination for low r
and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design
100% UIL tested
RoHS Compliant
= 3.0 m: at VGS = 10 V, ID = 21 A
DS(on)
= 3.2 m: at VGS = 7 V, ID = 19 A
DS(on)
DS(on)
March 2010
TM
General Description
The FDMS7670AS has been designed to minimize losses in
power conversion application. Advancements in both silicon and
package technologies have been combined to offer the lowest
r
while maintaining excellent switching performance. This
DS(on)
device has the added benefit of an efficient monolithic Schottky
body diode.
Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/ GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
FDMS7670AS N-Channel PowerTrench
®
SyncFET
TM
Top
D
Power 56
MOSFET Maximum Ratings T
Symbol Parameter Ratings Units
V
DS
V
GS
I
D
dv/dt MOSFET dv/dt 1.8 V/ns
E
AS
P
D
, T
T
J
STG
Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC= 25 °C 42
-Continuous (Silicon limited) T
-Continuous T
-Pulsed 150
Single Pulse Avalanche Energy (Note 3) 98 mJ
Power Dissipation TC = 25 °C 65
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C
C
Bottom
D
D
D
= 25 °C unless otherwise noted
Pin 1
S
S
S
G
= 25 °C 113
C
= 25 °C (Note 1a) 22
A
= 25 °C (Note 1a) 2.5
A
D
5
D
6
D
7
D
8
G
4
S
3
S
2
S
1
Thermal Characteristics
A
W
R
TJC
R
TJA
Thermal Resistance, Junction to Case 1.9
Thermal Resistance, Junction to Ambient (Note 1a) 50
Package Marking and Ordering Information
Device Marking Device Package Reel Size Tape Width Quantity
FDMS7670AS FDMS7670AS Power 56 13 ’’ 12 mm 3000 units
©2010 Fairchild Semiconductor Corporation
FDMS7670AS Rev.C1
°C/W
1
www.fairchildsemi.com
FDMS7670AS N-Channel PowerTrench
Electrical Characteristics T
= 25 °C unless otherwise noted
A
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
'BV
DSS
'T
J
I
DSS
I
GSS
On Characteristics
V
GS(th)
'V
GS(th)
'T
J
r
DS(on)
g
FS
Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V 30 V
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V
(Note 2)
I
= 10 mA, referenced to 25 °C 14 mV/°C
D
= 0 V 500 PA
GS
= 0 V 100 nA
DS
Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA 1.2 1.6 3.0 V
Gate to Source Threshold Voltage
Temperature Coefficient
StaticDrain to Source On Resistance
= 10 mA, referenced to 25 °C -5 mV/°C
I
D
= 10 V, ID = 21 A 2.4 3.0
V
GS
V
= 7 V, ID = 19 A 2.5 3.2
GS
= 4.5 V, ID = 17 A 3.0 3.5
V
GS
= 10 V, ID = 21 A, TJ= 125 °C 3.0 3.8
V
GS
Forward Transconductance VDS = 5 V, ID = 21 A 300 S
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance 1175 1565 pF
Reverse Transfer Capacitance 110 165 pF
= 15 V, VGS = 0 V,
V
DS
f = 1 MHz
Gate Resistance 1.3 2.6 :
3175 4225 pF
m:
®
SyncFET
TM
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
Q
Q
Q
g
g
gs
gd
Turn-On Delay Time
Rise Time 612ns
Turn-Off Delay Time 35 56 ns
= 15 V, ID = 21 A,
V
DD
V
= 10 V, R
GS
GEN
Fall Time 510ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 22 31 nC
Gate to Source Gate Charge 8.5 nC
Gate to Drain “Miller” Charge 4.9 nC
Drain-Source Diode Characteristics
V
= 0 V, IS= 2 A (Note 2) 0.43 0.7
V
SD
t
rr
Q
rr
Notes:
1. R
is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
TJA
the user's board design.
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge 41 67 nC
a. 50 °C/W when mounted on a
2
1 in
pad of 2 oz copper.
GS
= 0 V, IS= 21 A (Note 2) 0.75 1.2
V
GS
= 21 A, di/dt = 300 A/ Ps
I
F
= 6 :
V
DD
I
= 21 A
D
= 15 V,
TJC
14 25 ns
47 66 nC
35 56 ns
is guaranteed by design while R
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
is determined by
TCA
V
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. EAS of 98 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 14 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 21 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7670AS Rev.C1
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FDMS7670AS N-Channel PowerTrench
Typical Characteristics T
150
VGS = 3.5 V
120
90
60
DRAIN CURRENT (A)
,
30
D
I
0
0.0 0.5 1.0 1.5 2.0
Figure 1.
1.6
ID = 21 A
1.5
V
= 10 V
GS
1.4
1.3
1.2
1.1
1.0
NORMALIZED
0.9
0.8
DRAIN TO SOURCE ON-RESISTANCE
0.7
-75 -50 -25 0 25 50 75 100 125 150
F i g u r e 3 . N o r m a l i z e d O n - R e s i s t a n c e
vs Junction Temperature
VGS = 10 V
VGS = 4.5 V
VGS = 4 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
V
,
DRAIN TO SOURCE VOLTAGE (V)
DS
On-Region Characteristics Figure 2.
T
, JUNCTION TEMPERATURE (
J
= 25 °C unless otherwise noted
J
VGS = 3 V
o
C)
3.5
3.0
VGS = 3 V
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
2.5
VGS = 3.5 V
2.0
VGS=4 V
1.5
NORMALIZED
VGS = 4.5 V
1.0
DRAIN TO SOURCE ON-RESISTANCE
0.5
0306090120150
I
,
DRAIN CURRENT (A)
D
VGS=10 V
N o r m a l i z e d O n - R e s i s t a n c e
vs Drain Current and Gate Voltage
10
)
:
m
8
(
ID= 21 A
6
DRAIN TO
,
4
DS(on)
r
2
SOURCE ON-RESISTANCE
0
246810
V
,
GATE TO SOURCE VOLTAGE (V)
GS
Figure 4.
O n - R es i s t a n c e vs G a t e t o
PULSE DURATION = 80 Ps
DUTY CYCLE = 0.5% MAX
TJ= 125 oC
TJ= 25 oC
Source Voltage
®
SyncFET
TM
150
120
90
60
, DRAIN CURRENT (A)
30
D
I
0
1.0 1.5 2.0 2.5 3.0 3.5 4.0
Figure 5. Transfer Characteristics
FDMS7670AS Rev.C1
PULSE DURATION = 80Ps
DUTY CYCLE = 0 .5% MAX
V
= 5 V
DS
TJ= 125 oC
VGS, GATE TO SOURCE VOLTAGE (V)
TJ = 25 oC
TJ = -55 oC
200
100
V
= 0 V
GS
10
TJ= 125 oC
1
0.1
0.01
, REVERSE DRAIN CURRENT (A)
S
I
0.001
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6.
TJ = 25 oC
TJ = -55 oC
S o u r ce t o D r a i n Di o d e
Forward Voltage vs Source Current
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