Fairchild FDMS7670 service manual

FDMS7670

Bottom

Power 56

Top

Pin 1

G

S

S

S

D

D

D

D

G

S

S

S

D

D

D

D

5

6

7

8

3

2
1

4

N-Channel PowerTrench® MOSFET

30 V, 3.8 mΩ
Features

 Max r
 Max r
 Advanced Package and Silicon design for low r

efficiency

 Next generation enhanced body diode technology, engineered

for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications

 MSL1 robust package design
 100% UIL tested
 RoHS Compliant

= 3.8 mΩ at VGS = 10 V, ID = 21 A

DS(on)

= 5.0 mΩ at VGS = 4.5 V, ID = 17 A

DS(on)

DS(on)

and high

General Description

This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.

Applications

 IMVP Vcore Switching for Notebook
 VRM Vcore Switching for Desktop and Server
 OringFET / Load Switch
 DC-DC Conversion

July 2012

, fast switching speed and body

DS(on)

FDMS7670 N-Channel PowerTrench

®

MOSFET

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 42

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 150
Single Pulse Avalanche Energy (Note 3) 144 mJ
Power Dissipation TC = 25 °C 62
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 105

C

= 25 °C (Note 1a) 21

A

= 25 °C (Note 1a) 2.5

A

A

W

Thermal Characteristics

R

θJC

R

θJA

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7670 FDMS7670 Power 56 13 ’’ 12 mm 3000 units

©2012 Fairchild Semiconductor Corporation
FDMS7670 Rev.D2

Thermal Resistance, Junction to Case 2.0
Thermal Resistance, Junction to Ambient (Note 1a) 50

1

°C/W

www.fairchildsemi.com

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

ΔBV
ΔT

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 μA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V

I

= 250 μA, referenced to 25 °C 15 mV/°C

D

= 0 V 1 μA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

ΔV
ΔT

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 μA 1.25 1.9 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 μA, referenced to 25 °C -7 mV/°C

D

V

= 10 V, ID = 21 A 2.9 3.8

GS

= 4.5 V, ID = 17 A 4.1 5.0

GS

= 10 V, ID = 21 A, TJ = 125 °C 4.0 5.3

V

GS

Forward Transconductance VDS = 5 V, ID = 21 A 136 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 990 1315 pF
Reverse Transfer Capacitance 75 115 pF

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 1.2 2.5 Ω

3085 4105 pF

FDMS7670 N-Channel PowerTrench

mΩV

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 612ns
Turn-Off Delay Time 31 50 ns

= 15 V, ID = 21 A,

V

DD

V

= 10 V, R

GS

GEN

Fall Time 510ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 17 24 nC
Gate to Source Charge 9.8 nC
Gate to Drain “Miller” Charge 4.4 nC

Drain-Source Diode Characteristics

V

= 0 V, IS = 2.1 A (Note 2) 0.7 0.95

V

SD

t

rr

Q

rr

t

a

t

b

S Softness (t
t

rr

Q

rr

Notes:

1. R

is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR- 4 mater ial. R

θJA

the user's board design.

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 19 34 nC
Reverse Recovery Fall Time 14 ns
Reverse Recovery Rise Time 24 ns

) 1.7

b/ta

Reverse Recovery Time
Reverse Recovery Charge 34 54 nC

a. 50 °C/W when mounted on a
1 in2 pad of 2 oz copper.

GS

= 0 V, IS = 21 A (Note 2) 0.8 1.1

V

GS

I

= 21 A, di/dt = 100 A/μs

F

= 21 A, di/dt = 300 A/μs

I

F

= 6 Ω

V

DD

I

= 21 A

D

= 15 V,

θJC

15 26 ns

40 56 nC

38 61 ns

32 51 ns

is guaranteed by design while R

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

θCA

V

2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.

3. EAS of 144 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 17 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 22 A.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

©2012 Fairchild Semiconductor Corporation
FDMS7670 Rev.D2

2

www.fairchildsemi.com

FDMS7670 N-Channel PowerTrench

0.00.51.01.52.0

0

30

60

90

120

150

VGS = 3.5 V

VGS = 10 V

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

VGS = 4 V

VGS = 5 V

VGS = 4.5 V

I

D

, DRAIN CURRENT (A)

V

DS

, DRAIN TO SOURCE VOLTAGE (V)

0306090120150

0

1

2

3

4

5

VGS = 3.5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

NORMALIZED

DRAIN TO SOURCE ON-RESISTANCE

I

D

, DRAIN CURRENT (A)

V

GS

= 4 V

VGS = 4.5 V

VGS = 5 V

V

GS

= 10 V

-75 -50 -25 0 25 50 75 100 125 150

0.6

0.8

1.0

1.2

1.4

1.6

ID = 21 A
V

GS

= 10 V

NORMALIZED

DRAIN TO SOURCE ON-RESIST A NC E

T

J

, JUNCTION TEMPERATURE (

o

C)

246810

0

3

6

9

12

15

TJ = 125 oC

ID = 21 A

TJ = 25 oC

V

GS

, GATE TO S OURCE VOLTAGE (V)

r

DS(on)

,

DRAIN TO

SOURCE ON-RESISTANCE

(mΩ)

PULSE DURA TION = 80 μs
DUTY CYCLE = 0.5% MAX

12345

0

30

60

90

120

150

TJ = 150 oC

V

DS

= 5 V

PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX

TJ = -55 oC

TJ = 25 oC

I

D

, DRAIN CURRENT (A)

VGS, GATE TO SOURC E V OLTAGE (V)

0.0 0.2 0.4 0.6 0.8 1.0 1.2

0.001

0.01

0.1

1

10

100

TJ = -55 oC

TJ = 25 oC

TJ = 150 oC

V

GS

= 0 V

I

S

, REVERSE DRAIN CURRENT (A)

VSD, BODY DIODE FORWARD VOLTAGE (V)

500

Typical Characteristics T

Figure 1.

On Region Characteristics Figure 2.

= 25 °C unless otherwise noted

J

®

MOSFET

Nor m a l i z e d On-Resis t a n c e

vs Drain Current and Gate Voltage

Fi gure 3 . No r mali zed O n Res i sta n ce

vs Junction Temperature

©2012 Fairchild Semiconductor Corporation
FDMS7670 Rev.D2

Figure 5. Transfer Characteristics

Figure 4.

On-Re sistance v s Gate to

Source Voltage

Figure 6.

Sou rce to Drain Diode

Forward Voltage vs Source Current

3

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