Fairchild FDMS7660 service manual

FDMS7660

N-Channel PowerTrench® MOSFET

30 V, 2.8 mΩ
Features

 Max r
 Max r
 Advanced Package and Silicon combination for low r

high efficiency

 Next generation enhanced body diode technology, engineered

for soft recovery. Provides Schottky-like performance with
minimum EMI in sync buck converter applications

 MSL1 robust package design
 100% UIL tested
 RoHS Compliant

= 2.8 mΩ at VGS = 10 V, ID = 25 A

DS(on)

= 3.5 mΩ at VGS = 4.5 V, ID = 19 A

DS(on)

DS(on)

and

General Description

This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low r
diode reverse recovery performance.

Applications

 IMVP Vcore Switching for Notebook
 VRM Vcore Switching for Desktop and Server
 OringFET / Load Switch
 DC-DC Conversion

April 2009

, fast switching speed and body

DS(on)

FDMS7660 N-Channel PowerTrench

®

MOSFET

Top

D

Bottom

D

D

D

Pin 1

S

S

S

G

D

5

D

6

D

7

8

D

4

3

2
1

Power 56

MOSFET Maximum Ratings T

Symbol Parameter Ratings Units

V

DS

V

GS

I

D

E

AS

P

D

, T

T

J

STG

Drain to Source Voltage 30 V
Gate to Source Voltage (Note 4) ±20 V
Drain Current -Continuous (Package limited) TC = 25 °C 42

-Continuous (Silicon limited) T

-Continuous T

-Pulsed 150
Single Pulse Avalanche Energy (Note 3) 128 mJ
Power Dissipation TC = 25 °C 78
Power Dissipation T
Operating and Storage Junction Temperature Range -55 to +150 °C

= 25 °C unless otherwise noted

A

= 25 °C 144

C

= 25 °C (Note 1a) 25

A

= 25 °C (Note 1a) 2.5

A

Thermal Characteristics

G

S

S

S

A

W

R

θJC

R

θJA

Thermal Resistance, Junction to Case 1.6
Thermal Resistance, Junction to Ambient (Note 1a) 50

Package Marking and Ordering Information

Device Marking Device Package Reel Size Tape Width Quantity

FDMS7660 FDMS7660 Power 56 13 ’’ 12 mm 3000 units

©2009 Fairchild Semiconductor Corporation

660 Rev. D

FDMS7

°C/W

1

www.fairchildsemi.com

Electrical Characteristics T

= 25 °C unless otherwise noted

J

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics

BV

∆BV
∆T

I

DSS

I

GSS

DSS

DSS
J

Drain to Source Breakdown Voltage ID = 250 µA, VGS = 0 V 30 V
Breakdown Voltage Temperature

Coefficient
Zero Gate Voltage Drain Current VDS = 24 V, V
Gate to Source Leakage Current, Forward VGS = 20 V, V

= 250 µA, referenced to 25 °C 17 mV/°C

I

D

= 0 V 1 µA

GS

= 0 V 100 nA

DS

On Characteristics

V

GS(th)

∆V
∆T

r

DS(on)

g

FS

GS(th)

J

Gate to Source Threshold Voltage VGS = VDS, ID = 250 µA 1.25 1.9 3.0 V
Gate to Source Threshold Voltage

Temperature Coefficient

Static Drain to Source On Resistance

I

= 250 µA, referenced to 25 °C -7 mV/°C

D

V

= 10 V , ID = 25 A 1.9 2.8

GS

= 4.5 V, ID = 19 A 2.7 3.5

GS

= 10 V, ID = 25 A, TJ = 125 °C 2.5 3.7

V

GS

Forward Transconductance VDS = 5 V, ID = 25 A 250 S

Dynamic Characteristics

C

iss

C

oss

C

rss

R

g

Input Capacitance
Output Capacitance 1380 1830 pF
Reverse Transfer Capacitance 125 190 pF

= 15 V, VGS = 0 V,

V

DS

f = 1 MHz

Gate Resistance 0.9 2.0 Ω

4185 5565 pF

FDMS7660 N-Channel PowerTrench

mΩV

®

MOSFET

Switching Characteristics

t

d(on)

t

r

t

d(off)

t

f

Q
Q
Q
Q

g
g
gs
gd

Turn-On Delay Time
Rise Time 918ns
Turn-Off Delay Time 37 60 ns
Fall Time 713ns
Total Gate Charge VGS = 0 V to 10 V
Total Gate Charge VGS = 0 V to 4.5 V 27 38 nC
Gate to Source Charge 12.3 nC
Gate to Drain “Miller” Charge 7.2 nC

V

= 15 V, ID = 25A,

DD

= 10 V, R

V

GS

GEN

Drain-Source Diode Characteristics

V

= 0 V, IS = 2.1 A (Note 2) 0.7 0.95

V

SD

t

rr

Q

rr

t

a

t

b

S Softness (t
t

rr

Q

rr

Notes:

1. R

is determined with the device mount ed on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 mate rial . R

θJA

the user's board design.

Source to Drain Diode Forward Voltage
Reverse Recovery Time

Reverse Recovery Charge 26 42 nC
Reverse Recovery Fall Time 19 nC
Reverse Recovery Rise Time 27 nC

) 1.4

b/ta

Reverse Recovery Time
Reverse Recovery Charge 43 68 nC

a. 50 °C/W when mounted on a

2

1 in

GS

= 0 V, IS = 25 A (Note 2) 0.8 1.1

V

GS

= 25 A, di/dt = 100 A/µs

I

F

= 25 A, di/dt = 300 A/µs

I

F

pad of 2 oz copper.

= 6 Ω

V

DD

= 25 A

I

D

= 15 V,

θJC

17 31 ns

60 84 nC

46 74 ns

36 58 ns

is guaranteed by design while R

b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.

is determined by

θCA

V

2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0%.

3. EAS of 128 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 16 A, VDD = 27 V, VGS = 10 V. 100% test at L = 0.3 mH, I

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

©2009 Fairchild Semiconductor Corporation
FDMS7660 Rev.

D

2

AS

= 23 A.

www.fairchildsemi.com

FDMS7660 N-Channel PowerTrench

Typical Characteristics T

150

120

90

60

DRAIN CURRENT (A)

,

30

D

I

0

0 0.5 1.0 1.5 2.0

V

Figure 1.

1.6

ID = 25 A
V

= 10 V

GS

1.4

1.2

1.0

NORMALIZED

0.8

DRAIN TO SOURCE ON-RESISTANCE

0.6

-75 -50 -25 0 25 50 75 100 125 150

T

Fig u r e 3. Nor m alize d O n - Resi s t ance

vs Junction Temperature

VGS = 10 V
VGS = 4.5 V

VGS = 4 V

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

, DRAIN TO SOURCE VOLTAGE (V)

DS

On-Region Characteristics Figure 2.

, JUNCTION TEMPERATURE (

J

= 25°C unless otherwise noted

J

VGS = 3.5 V

VGS = 3 V

o

C)

14

12

VGS = 3 V

10

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

8

V

= 3.5 V

6

NORMALIZED

4

2

DRAIN TO SOURCE ON-RESISTANCE

0

0306090120150

GS

V

= 10 V

GS

I

,

DRAIN CURRENT (A)

D

V

GS

= 4.5 V

VGS = 4 V

Norm a l i z e d O n -Resista n c e

vs Drain Current and Gate Voltage

10

)

Ω

m

8

(

6

DRAIN TO

,

4

DS(on)

r

2

SOURCE ON-RESISTANCE

0

246810

V

,

GATE TO SOURCE VOLTAG E (V)

GS

Figure 4.

On-Resistan ce vs Gate to

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

ID = 25 A

TJ = 125 oC

TJ = 25 oC

Source Voltage

®

MOSFET

150

PULSE DURATION = 80 µs
DUTY CYCLE = 0.5% MAX

120

V

= 5 V

DS

90

60

, DRAIN CURRENT (A)

30

D

I

0

12345

TJ = 150 oC

VGS, GATE TO SOURCE VOLTAGE (V)

Figure 5. Transfer Characteristics

©2009 Fairchild Semiconductor Corporation
FDMS7660 Rev.

D

200

V

GS

= 0 V

TJ = 150 oC

100

10

TJ = 25 oC

TJ = -55 oC

1

, REVERSE DRAIN CURRENT (A)

S

I

0.1

0.2 0.4 0.6 0.8 1.0 1.2

VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 6.

Source to Drain Di ode

TJ = 25 oC

TJ = -55 oC

Forward Voltage vs Source Current

3

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